• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.7 no.6
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• pp.117-125
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• 1998

The paper attempts to estimate the incubation time of a cavity in the interface between a power law creep particle and an elastic matrix subjected to a uniaxial stress. Since the power law creep particle is time dependent, the stresses in the interface relax. The volume free energy associated with Helmholtz free energy includes strain energies caused by applied stress and dislocations piled up in interface(DPI). The energy due to DPI is found by modifying the result of Dundurs and Mura[4]. The volume free energies caused by both applied stress and DPI are a function of the cavity size(r) and elapsed time(t) and arise from stress relaxation in the interface. Critical radius $r^*$ and incubation time $t^*$ to maximise Helmholtz free energy is found in present analysis. Also, kinetics of cavity formation are investigated using the results obtained by Riede [7]. The incubation time is defined in the analysis as the time required to satisfy both the thermodynamic and kinetic conditions. Through the analysis it is found that 1) strain energy caused by the applied stress does not contribute significantly to the thermodynamic and kinetic conditions of a cavity formation, 2) in order to satisfy both thermodynamic and kinetic conditions, critical radius $r^*$ decreases or holds constant with increase of the time until the kinetic condition(eq. 2.3) is satisfied. there for the cavity may not grow right after it is formed, as postulated by Harris [15], and Ishida and Mclean [16], 3) the effects of strain rate exponent (m), material constant $\sigma$0, volume fraction of the particle to matrix(f)and particle size on the incubation time are estimated using material constants of the copper as matrix.

• Journal of the Korean Society of Hazard Mitigation
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• v.9 no.4
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• pp.107-113
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• 2009

This paper considers the influence of floc on the sedimentation rate for the cohesive material. The effects of floc density and size changes were also taking into consideration during the experiment. The settling velocity of a discrete floc was measured in a quiescent water column. Floc diameter and density were investigated using a modified Stokes equation with some constants such as water density, viscosity, material density and the floc fractal dimension $n_f$ obtained from the relationship between the floc diameter and the floc settling. The floc diameter of quartz and alumina increased at increasing initial concentrations. The floc size of quartz with increasing NaCl concentration varied between approximately 0.8 um to $10{\mu}m$. Floc density decreased as floc size increased. The floc settling velocity and the floc diameter have a straight line relationship on a logarithm. The floc fractal dimension nf was 2.65 with increasing of initial concentration and 2.93 with increasing of NaCl. The exponent n to predict the settling velocity was proposed and varied from 1 to 1.93.

• Journal of Korean Society of Steel Construction
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• v.10 no.4 s.37
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• pp.691-700
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• 1998

Based on Von Karman-Donnell kinematic assumptions for laminated shells, the nonlinear vibration behaviour of antisymmetrically or asymmetrically laminated cross-ply circular cylindrical shells with clamped and simply-supported ends are studied by a multi-mode approach. A equation is formulated and satisfies the associated compatibility equation and all boundary conditions. The displacement function is assumed to take the form of the lowest linear vibration mode and to satisfy continuity of the circumferential displacement. The nonlinear vibration equation is derived by the Galerkin's method. And nonlinear frequency is obtained by using the harmonic balance method as a function of lamination parameters, material constants, aspect ratio and amplitude of vibration. The effect of initial imperfection is also included. Results of the non-linear vibration are presented for different amplitudes of initial imperfection and four sets of boundary conditions. Present results are compared well with existing analysis results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.6
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• pp.367-371
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• 2014

We investigated dielectric relaxation properties of $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3$ ceramics by addition (0~0.3 wt%) of $(Ba,Ca)SiO_3$ glass frit. All composition of $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3$ added $(Ba,Ca)SiO_3$ glass frit showed the same crystallographic properties, coexistence of orthorhombic and tetragonal phase. By increasing addition of $(Ba,Ca)SiO_3$ glass frit, the Curie temperatures of $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3$ ceramics were decreased, whereas maximum dielectric constants of $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3$ ceramics were dramatically increased. Especially the deviations of Curie temperature $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3$ ceramics were increased by increasing amount of $(Ba,Ca)SiO_3$ glass frit, and it indicated that $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3$ ceramics added $(Ba,Ca)SiO_3$ glass frit have relaxor characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.537-542
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• 2011

Recently, n-InZnO/p-CuO oxide diode has attracted great attention due to possible application for selector device of 3-dimensional cross-point resistive memory structures. To investigate the detailed properties of InZnO (IZO), we have deposited IZO films on the fused quartz substrate using PLD (pulsed laser deposition) method at oxygen pressure of 1~100 mTorr and substrate temperature of RT$\sim600^{\circ}C$. The influence of oxygen pressure and substrate temperature on structural, optical and electrical of IZO films is analyzed using XRD (x-ray diffraction), SEM (scanning electron microscopy), UV-Vis spectrophotometry, spectroscopic ellipsometry (SE) and hall measurements. The XRD results shows that the deposited thin films are polycrystalline over $300^{\circ}C$ of substrate temperature independent of oxygen pressure. The resistivity of films was increased as oxygen pressure and substrate temperature decrease. The thickness and optical constants of the deposited films measured with UV-Vis spectrophotometer were also compared with those of broken SEM and SE results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.77-80
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• 1995

GaSb crystals were grown by the vertical Bridgman method. P-type GaSb crystals were grown with Ga:Sb=1:1 at % ratio without dopants and with Te, respectively. Also, GaSb:Te crystals were investigated. Lattice constants were 6.117${\AA}$ for p-type. The carrier concentration, the resistivity, and the carrier mobility measured by the van der Pauw method were p≡8 x $10^{16}$$cm^{-3}$, p≡0.20$\Omega$-cm, ${\mu}$$_{n}$≡$400\textrm{cm}^2$$V^{-1}$$sec^{-1}$ for p-type, n≡1 x $10^{17}$$cm^{-3}$, p≡0.15 $\Omega$-cm, ${\mu}$$_{n}$≡$500\textrm{cm}^2$$V^{-1}$$sec^{-1}$ for n-type at 300K. In case of treating with metal ion of $Ru^{+3}$, $Pt^{+1}$, p≡2 x $10^{17}$$cm^{-3}$, p≡0.08$\Omega$-cm, ${\mu}$$_{n}$≡420$\textrm{cm}^2$$V^{-1}$$sec^{-1}$ for p-type, n≡2.5 x $10^{17}$$cm^{-13}$, p≡0.07 $\Omega$-cm, ${\mu}$$_{n}$≡520$\textrm{cm}^2$$V^{-1}$$sec^{-1}$ for n-type were obtained.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.24 no.5
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• pp.531-542
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• 2011

The time-dependent temperature distribution across the section in bridges is determined on the basis of the three-dimensional finite element analyses and numerical time integration in this study. The material properties which change with time and thermal stress of concrete are taken into account to effectively trace the early-age structural responses. Since the temperature distribution is nonlinear and depends upon many material constants such as the thermal conductivity, specific heat, hydration heat of concrete, heat transfer coefficients and solar radiation, three representative influencing factors of the construction season, wind velocity and bridge pavement are considered at the parametric studies. The validity of the introduced numerical model is established by comparing the analytical predictions with results from previous analytical studies. On the basis of parametric studies for four different bridge sections, it is found that the creep deformation in concrete bridges must be considered to reach more reasonable design results and the temperature distribution proposed in the Korean bridge design specification need to be improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.281-287
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• 2002

The stochiometric composition of AgGaS$_2$ polycrystal source materials for the AgGaS$_2$/GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal AgGaS$_2$ has tetragonal structure of which lattice constant a$\sub$0/ and c$\sub$0/ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. AgGaS$_2$/GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal AgGaS$_2$ by the Hot Wall Epitaxy (100) system. The source and substrate temperature were 590$^{\circ}C$ and 440$^{\circ}C$ respectively. The crystallinity of the grown AgGaS$_2$/GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for AgGaS$_2$/GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}$ : 8.695${\times}$10$\^$-4/ eV/K, and ${\beta}$ = 332 K. From the photocurrent spectra by illumination of polarized light of the AgGaS$_2$/GaAs epilayer, we have found that crystal field splitting ΔCr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pain are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.131-134
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• 2002

The effect of the addition on the densification, low temperature sintering, and microwave dielectric properties of the Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$/(CLNT) was investigated. $Bi_2O_3$ additives improved the dencification and reduced the sintering temperature from $1150^{\circ}C$ to $900^{\circ}C$ of CLNT microwave dielectric ceramics. As increasing $Bi_2O_3$ contents, the dielectric constants and bulk density were increased. The quality factor, however, was decreased slighty. The temperature coefficients of the resonant frequency shifted positive value as increasing $Bi_2O_3$ contents. The dielectric properties of Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$ and Ca[($Li_{1/3}Nb_{2/3}$)$_{0.8}Ti_{0.2}$]$O_{3-{\delta}}$ with 5wt% $Bi_2O_3$ sintered at $900^{\circ}C$ for 3h were $\varepsilon_{r}$=20, 35 Q.$f_{0}$=6500, 11,000 GHz, $\tau_{f}$=4, 13 ppm/$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.177-180
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• 2002

Thickness dependence of crystallographic orientation of diol based sol-gel derived PZT(52/48) films on dielectric and piezoelectric properties was investigated The thickness of each layer by one time spinning was about 0.2 $\mu\textrm{m}$, and crack-free films was successfully deposited on 4 inches Pt/Ti/SiO$_2$/Si substrates by 0.5 mol solutions in the range from 0.2 $\mu\textrm{m}$ to 3.8 $\mu\textrm{m}$. Excellent P-E hysteresis curves were achieved without pores or any defects between interlayers. As the thickness increased , the (111) preferred orientation disappeared from 1$\mu\textrm{m}$ to 3 $\mu\textrm{m}$ region, and the orientation of films became random above 3 $\mu\textrm{m}$. Dielectric constants and longitudinal piezoelectric coefficient d$\_$33/, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of 0.8 7m. A micromachined piezoelectric cantilever have been fabricated using 0.8 $\mu\textrm{m}$ thickness PZT (52/48) films. PZT films were prepared on Si/SiN$\_$x/SiO$_2$/Ta/Pt substrate and fabricated unimorph cantilever consist of a 0.8 fm thick PZT layer on a SiNx elastic supporting layer, which becomes vibration when ac voltage is applied to the piezoelectric layer. The dielectric constant (at 100 kHz) and remanent polarization of PZT films were 1050 and 25 ${\mu}$C/$\textrm{cm}^2$, respectively. Electromechanical characteristics of the micromachined PZT cantilever in air with 200-600 $\mu\textrm{m}$ lengths are discussed in this presentation.