• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.1
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• pp.48-57
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• 2020

MCU used in applications such as wireless chargers and USB type-C require MTP memory with a small cell size and a small additional process mask. Conventional double poly EEPROM cells are small in size, but additional processing masks of about 3 to 5 sheets are required, and FN tunneling type single poly EEPROM cells have a large cell size. In this paper, a 110nm MTP cell using a vertical PIP capacitor is proposed. The erase operation of the proposed MTP cell uses FN tunneling between FG and EG, and the program operation uses CHEI injection method, which reduces the MTP cell size to 1.09㎛2 by sharing the PW of the MTP cell array. Meanwhile, MTP memory IP required for applications such as USB type-C needs to operate over a wide voltage range of 2.5V to 5.5V. However, the pumping current of the VPP charge pump is the lowest when the VCC voltage is the minimum 2.5V, while the ripple voltage is large when the VCC voltage is 5.5V. Therefore, in this paper, the VPP ripple voltage is reduced to within 0.19V through SPICE simulation because the pumping current is suppressed to 474.6㎂ even when VCC is increased by controlling the number of charge pumps turned on by using the VCC detector circuit.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.1
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• pp.64-71
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• 2020

eFuse OTP memory IP is required to trim the analog circuit of the gate driving chip of the power semiconductor device. Conventional NMOS diode-type eFuse OTP memory cells have a small cell size, but require one more deep N-well (DNW) mask. In this paper, we propose a small PMOS-diode type eFuse OTP memory cell without the need for additional processing in the CMOS process. The proposed PMOS-diode type eFuse OTP memory cell is composed of a PMOS transistor formed in the N-WELL and an eFuse link, which is a memory element and uses a pn junction diode parasitic in the PMOS transistor. A core driving circuit for driving the array of PMOS diode-type eFuse memory cells is proposed, and the SPICE simulation results show that the proposed core circuit can be used to sense post-program resistance of 61㏀. The layout sizes of PMOS-diode type eFuse OTP memory cell and 512b eFuse OTP memory IP designed using 0.13㎛ BCD process are 3.475㎛ × 4.21㎛ (= 14.62975㎛2) and 119.315㎛ × 341.95㎛ (= 0.0408mm2), respectively. After testing at the wafer level, it was confirmed that it was normally programmed.

• Journal of the Korea Convergence Society
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• v.13 no.4
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• pp.45-51
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• 2022

Fear of contact exists due to the prevention of the spread of infectious diseases such as COVID-19. When using the common entrance door of an apartment, access is possible only if the resident enters a password or obtains the resident's permission. There is the inconvenience of having to manually enter the number and password for the common entrance door to enter. Also, contactless entry is required due to COVID-19. Due to the development of ICT, users can be easily identified through the development of face recognition and voice recognition technology. The proposed method detects a visitor's face through a CCTV or camera attached to the common entrance door, recognizes the face, and identifies it as a registered resident. Then, based on the registered information of the resident, it is possible to operate without contact by interworking with the elevator on the server. In particular, if face recognition fails with a hat or mask, the visitor is identified by voice or additional authentication of the visitor is performed based on the voice message. It is possible to block the spread of contagiousness without leaving any contactless function and fingerprint information when entering and exiting the front door of an apartment house, and without the inconvenience of access.

• Journal of IKEEE
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• v.26 no.3
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• pp.422-429
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• 2022

A light sensor chip requires a small capacity eFuse (electrical fuse) OTP (One-Time Programmable) memory IP (Intellectual Property) to trim analog circuits or set initial values of digital registers. In this paper, 128-bit eFuse OTP IP is designed using only 3.3V MV (Medium Voltage) devices without using 1.8V LV (Low-Voltage) logic devices. The eFuse OTP IP designed with 3.3V single MOS devices can reduce a total process cost of three masks which are the gate oxide mask of a 1.8V LV device and the LDD implant masks of NMOS and PMOS. And since the 1.8V voltage regulator circuit is not required, the size of the illuminance sensor chip can be reduced. In addition, in order to reduce the number of package pins of the illumination sensor chip, the VPGM voltage, which is a program voltage, is applied through the VPGM pad during wafer test, and the VDD voltage is applied through the PMOS power switching circuit after packaging, so that the number of package pins can be reduced.

• Journal of Advanced Information Technology and Convergence
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• v.9 no.1
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• pp.115-125
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• 2019

In this paper, the image is received from the camera and the lane is sensed. There are various ways to detect lanes. Generally, the method of detecting edges uses a lot of the Sobel edge detection and the Canny edge detection. The minimum use of multiplication and division is used when designing for the hardware configuration. The images are tested using a black box image mounted on the vehicle. Because the top of the image of the used the black box is mostly background, the calculation process is excluded. Also, to speed up, YCbCr is calculated from the image and only the data for the desired color, white and yellow lane, is obtained to detect the lane. The median filter is used to remove noise from images. Intermediate filters excel at noise rejection, but they generally take a long time to compare all values. In this paper, by using addition, the time can be shortened by obtaining and using the result value of the median filter. In case of the Sobel edge detection, the speed is faster and noise sensitive compared to the Canny edge detection. These shortcomings are constructed using complementary algorithms. It also organizes and processes data into parallel processing pipelines. To reduce the size of memory, the system does not use memory to store all data at each step, but stores it using four line buffers. Three line buffers perform mask operations, and one line buffer stores new data at the same time as the operation. Through this work, memory can use six times faster the processing speed and about 33% greater quantity than other methods presented in this paper. The target operating frequency is designed so that the system operates at 50MHz. It is possible to use 2157fps for the images of 640by360 size based on the target operating frequency, 540fps for the HD images and 240fps for the Full HD images, which can be used for most images with 30fps as well as 60fps for the images with 60fps. The maximum operating frequency can be used for larger amounts of the frame processing.

• Journal of radiological science and technology
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• v.31 no.3
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• pp.287-292
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• 2008

Position information of radiation interactions in detection material is essential to reconstruct a radiation source image. With most position sensing techniques, the position information of a single interaction inside the detectors can be precisely obtained. Each interaction position of multi-scattering inside scintillators, however, can not be individually measured and only the average of the scattering positions can be obtained, which causes the uncertainty in the measured interaction position. In this paper, the position uncertainties due to the multi-scattering were calculated by Monte Carlo simulation. The simulation model was a 50 by 50 by 5 mm $LaCl_3$(Ce) scintillator(pixel size is 2 by 2 by 5mm) which was utilized for the dual collimation camera. The dual collimation camera uses the information from both photoelectric effect and Compton scattering, and therefore, position uncertainties for both partial and full energy deposition of radiation interactions are calculated. In the case of partial energy deposition(PED), the standard deviations of positions are less than $1{\sim}2mm$, which means the uncertainty caused by multi-scattering is not significant. Because the effect of the multi-scattering with PED is insignificant, the multi-scattering has little effect on the performance of Compton imaging of dual collimation camera. In the case of full energy deposition(FED), however, the standard deviation of the positions is about twice that of the pixel size of the 1stdetector, except for 122keV incident radiations. Therefore, the standard deviations caused by multi-scatterings should be considered in the design of the coded mask of the dual collimation camera to avoid artifact on the reconstructed image. The position uncertainties of the FEDs are much larger than those of the PEDs for all radiation energies and the ratio of PEDs to FEDs increases when the incident radiation energy increases. The position uncertainties of both PEDs and FEDs are dependent on the incident radiation energy.

• Journal of Environmental Health Sciences
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• v.40 no.6
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• pp.454-468
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• 2014

Objectives: This study was conducted to investigate the actual condition of the farm work environment and personal protective equipment as part of the effort to improve livestock work for the safety and health of poultry farmers and provide basic data for establishing plans to improve and develop personal protective equipment. Methods: For this purpose, a questionnaire survey on general information about stables, the poultry work environment, accidents, the wearing of work clothes and personal protective equipment, and the level of awareness related to personal protective equipment was conducted among 148 poultry farmers. Results: As a result, it was found that poultry workplace environment was exposed to such risks as fine dusts; organic dusts; poisonous gases; odorous substances; chicken excrement; contact with chickens, bacteria or viruses; and accidents related to machine operation. Thirteen percent of respondents suffered severe respiratory diseases, and the most frequently injured sites due to accidents were the hands (25.7%), knees (23.8%), arms (17.3%), and head (10.9%). The most frequent type of accident was collisions between the body and obstacles or machinery during movement (36.4%), followed by erroneous machine operation such as feeders and electric shocks (8.5%). Regarding the wearing of work clothes and personal protective equipment, 51.7% of the respondents wore worn-out clothing or everyday clothes, whereas only 32.0% wore work clothes. The percentage of farmers who wore proper protective equipment for the work environment during poultry work was 48.4%. The most frequently used type of protective equipment was boots (38.9%), followed by mask (36.7%), gloves (36.3%), appropriate work clothes (22.6%), quarantine clothes (17.6%), helmets (13.4%), and goggles (12.6%). The rate of wearing goggles was low because they were considered inconvenient and lowered work efficiency. Furthermore, they purchased everyday products available on the market for their personal protective equipment which were not appropriate for maintaining safety in an actual harmful environment and its consequent risks. As a result of the survey of the awareness level related to personal protective equipment, their levels of awareness of accidents and attitude proved to be average or higher, but the practice of wearing protective equipment and the level of knowledge and management of personal protective equipment were lower. Conclusion: This survey found that the wearing status of personal protective equipment among poultry farmers was insufficient even though they were exposed to risks. Most respondents were aware of the necessity of wearing personal protective equipment and of the potential for accidents, but they did not wear proper protective equipment. Their wearing rate was low due to a lack of knowledge about protective equipment, as well as the inconvenience of wearing it. Therefore there is a need to improve and develop specialized personal protective equipment for respiration, hands, and eyes, as well as work clothes that can protect farmers from major harmful matter that is generated in the poultry workplace. Based on the results of this investigation, we will conduct further studies on the required performance and design directions of personal protective equipment while collecting more objective data through field-oriented assessments.

• Clean Technology
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• v.29 no.4
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• pp.255-261
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• 2023

Power semiconductors are semiconductors used for power conversion, transformation, distribution, and control. Recently, the global demand for high-voltage power semiconductors is increasing across various industrial fields, and optimization research on high-voltage IGBT components is urgently needed in these industries. For high-voltage IGBT development, setting the resistance value of the wafer and optimizing key unit processes are major variables in the electrical characteristics of the finished chip. Furthermore, the securing process and optimization of the technology to support high breakdown voltage is also important. Etching is a process of transferring the pattern of the mask circuit in the photolithography process to the wafer and removing unnecessary parts at the bottom of the photoresist film. Ion implantation is a process of injecting impurities along with thermal diffusion technology into the wafer substrate during the semiconductor manufacturing process. This process helps achieve a certain conductivity. In this study, dry etching and wet etching were controlled during field ring etching, which is an important process for forming a ring structure that supports the 3.3 kV breakdown voltage of IGBT, in order to analyze four conditions and form a stable body junction depth to secure the breakdown voltage. The field ring ion implantation process was optimized based on the TEG design by dividing it into four conditions. The wet etching 1-step method was advantageous in terms of process and work efficiency, and the ring pattern ion implantation conditions showed a doping concentration of 9.0E13 and an energy of 120 keV. The p-ion implantation conditions were optimized at a doping concentration of 6.5E13 and an energy of 80 keV, and the p+ ion implantation conditions were optimized at a doping concentration of 3.0E15 and an energy of 160 keV.