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A Study on the Resident Recognition of Common Space in Apartment (공동주택 거주자의 공유공간 인식에 대한 조사 연구)

  • Han, Min-Seung;Whang, Hee-Joon
    • Journal of the Architectural Institute of Korea Planning & Design
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    • v.35 no.4
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    • pp.45-52
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    • 2019
  • The most ordinary form of residential type in Korea is a plate-type apartment, and the common space in these apartment is attracting as an important factor for enhancing social exchanges among neighbors and forming community consciousness. In addition, it provides a sense of psychological security by enabling natural exchanges and communication in contemporary society. It is desirable to plan the flow of space in such a way that private, semi-private, semi-public, and public spaces are linked. Semi-private and semi-public spaces can be defined as common spaces. Semi-private spaces are strongly recognized in the order of unit household entrance, main entrance, elevator, corridor, staircase, playground, bench, trail, walkway and parking lot, exercise space, main/back gate, the ability to gratify is increased sense of belonging, ownership consciousness formation, defensive function. Semi-public space is strongly recognized in the order of playground, bench, exercise space, trail, main entrance, walkway and parking lot, unit household entrance, main/back gate, corridor, staircase, elevator, the ability to gratify is increase of social contact, Secondary activity space function. In addition, the function to gratify in the common space differs according to gender and age group among resident characteristics, and differs according to corridor type, parking lot type and main entrance type. Therefore, differentiated planning of common space is needed in consideration of these differences in the design of common space in future.

Synchronous Position Controller Design of Hydraulic Cylinders for a Sluice Gate Using Fuzzy PI (퍼지 PI를 이용한 배수갑문용 유압실린더의 위치 및 동기 제어기 설계)

  • Choi, Byung-Jae
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.7 no.3
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    • pp.117-120
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    • 2014
  • In general a main technology of control a sluice gate is accurate synchronous position control for the two cylinders when they are moving with the sluice gate together over 10[m]. Because the nonlinear friction and the unconstant supply flow. Cylinders' displacement will be different. In this case the sluice gate may be deformed and abraded, and even the sluice gate may unable to work. In order to design the controller for this system, we designed two kinds of Fuzzy PI controllers. Fuzzy PI position controller and Fuzzy PI synchronous controller have been designed. We show some simulation results for its availability.

TFT-LCD Display Quality Improvement by the Adjustment of Gate Line Structure

  • Zhang, Mi;Xue, Jian She;Park, Chun-Bae;Koh, Jai-Wan;Zhang, Zhi-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.101-104
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    • 2008
  • Too high stress of the bottom Mo layer of the gate line is thought to be the main reason for H-line mura. H-Line mura is eliminated effectively by changing the gate line metal structure from Mo/AlNd/Mo to AlNd/Mo. The new structure does not influence the panel's electrical characteristics.

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Optimization of Forging Process of Gate Valve using DACE Model (DACE 모델을 이용한 게이트밸브 단조공정의 최적설계화)

  • Oh, Seung-Hwan;Kong, Hyeong-Geol;Kang, Jung-Ho;Park, Young-Chul
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.6 no.1
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    • pp.71-77
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    • 2007
  • In case of the welding process, a conventional production method of gate valve, it has a merit of light weight, but also a demerit of high production cost and an impossibility in mass production due to work by hand. However, in case of the forging process, it has economic merits and can take a mass production process, too. The main focus of this paper is the optimization of preform in the forging process. This paper proposed an optimal design to improve the mechanical efficiency of gate valve made by forging method instead of welding. the optional design is conducted as application of real response model to Kriging model using computer simulation. Also, from verification of the response model with optimized results we were confirmed that the applications of Kriging method to structural optimum design using finite element analysis and equation are useful and reliable.

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Analysis of the electrical characteristics for SiGe pMOSFET by the carrier transport models (캐리어 전송 모델에 따른 SiGe pMOSFET의 전기적 특성분석)

  • 김영동;고석웅;정학기;허창우
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.10a
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    • pp.773-776
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    • 2003
  • In this paper, we have designed the p-type SiGe MOSFET and analyzed the electrical characteristics. When the gate voltage is biased to -1.5V, the threshold voltage values are -0.97V and -1.15V at room temperature and 77K, respectively. We know that the operating characteristics of SiGe MOSFET is superior to the basic Si MOSFET which the threshold voltage is -1.36V.

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Design and Implementation of a New Multilevel DC-Link Three-phase Inverter

  • Masaoud, Ammar;Ping, Hew Wooi;Mekhilef, Saad;Taallah, Ayoub;Belkamel, Hamza
    • Journal of Power Electronics
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    • v.14 no.2
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    • pp.292-301
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    • 2014
  • This paper presents a new configuration for a three-phase multilevel voltage source inverter. The main bridge is built from a classical three-phase two-level inverter and three bidirectional switches. A variable DC-link employing two unequal DC voltage supplies and four switches is connected to the main circuit in such a way that the proposed inverter produces four levels in the output voltage waveform. In order to obtain the desired switching gate signals, the fundamental frequency staircase modulation technique is successfully implemented. Furthermore, the proposed structure is extended and compared with other types of multilevel inverter topologies. The comparison shows that the proposed inverter requires a smaller number of power components. For a given number of voltage steps N, the proposed inverter requires N/2 DC voltage supplies and N+12 switches connected with N+7 gate driver circuits, while diode clamped or flying capacitor inverters require N-1 DC voltage supplies and 6(N-1) switches connected with 6(N-1) gate driver circuits. A prototype of the introduced configuration has been manufactured and the obtained simulation and experimental results ensure the feasibility of the proposed topology and the validity of the implemented modulation technique.

A Stud on the Space Organization and Composition Elements in Gangwon Gamyoung (강원감영의 공간구성과 구성요소의 건축적 특징에 관한 연구)

  • Choi, Jang-Soon
    • Journal of the Korean Institute of Rural Architecture
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    • v.7 no.2
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    • pp.31-47
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    • 2005
  • This study is to inspect and analyse the historical background, spacial organization and architectural features about the traditional government office building of Gangwon Gamyoung(the supreme local government office of Gangwondo in Chosun dynasty). The results are as follows. - Gangwon Gamyoung was located at the center of Gangwondo in consideration of distance to each small local office. And also it was located in consideration of geographical connection between Hanseong(today's Seoul). - The spatial organization of Gamyoung was divided into the three parts of entrance space, government office building space and backyard space. The entrance space was composed of three gates(Pojungru-Jungsammun-Naesammun). The government office building Space was consisted of business and living building as center of Sunhwadang(the main office building). And the backyard space was composed of Yonji(pond), Jungja(bower), and so on - The way to enter the space of Gamyoung follows the order from Pojungru(the first & outer main gate with a bower), Jungsammun(the second & intermediate gate), Naesammun(the third & inner gate) to Sunhwadang at last. - There were a beautiful Yonji(pond) which to be rectangular type and to have a round island with Bongraegak(bower) at Gamyoung backyard, the drain conduit and pedestrian road covered with pebble in the ground.

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A Research on the Use and Architectural Changes of Sungnyemun in King Yeongjo's Reign (영조 대 숭례문 문루의 하층 사용과 건축 변화에 대한 연구)

  • Jo, Sang-Sun
    • Journal of architectural history
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    • v.21 no.3
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    • pp.45-54
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    • 2012
  • This research work is to analyze architectural characteristics of Sungnyemun especially in King Yeongjo's reign in Joseon dynasty. The result of this research is summarized as following: 1. The architectural characteristics of Sungnyemun in King Yeongjo's reign are closely related with Confucian ceremonies such as Jeon-jwa and Heon-goek-rye. To perform these ceremonies, some lower walls of Sungnyemun's wooden pavilion were removed and used as ceremonial space. And after ceremony it was restored. 2. The floor type of center bay of the 1st story of wooden pavilion should have a type of floor using long and narrow fine tree plate, which is same type before the repair work of 1960's dismantlement. 3. The width of east stairway which is reached to east small gate, was changed just before Japanese's rule(1910~1945), should be broaden than present width, which is proven through the recent excavation. 4. The reason of asymmetric characteristic of locations of both east and west narrow-gate, and widths of east and west stairway, are related with order of King's ceremony. * Jeonjwa : a ceremony to see national affairs or receive royalty from officials in main hall or main gate of palace in Joseon dynasty (some times open to public) * Heon-goek-rye : a ceremony after win a war and offering to king enemy's ear or head in Joseon dynasty.

Electrical Characteristics of Novel LIGBT with p Channel Gate and p+ Ring at Reverse Channel Structure (p+링과 p 채널 게이트를 갖는 역채널 LIGBT의 전기적인 특성)

  • Gang, Lee-Gu;Seong, Man-Yeong
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.3
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    • pp.99-104
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    • 2002
  • lateral insulated gate bipolar transistors(LIGBTs) are extensively used in high voltage power IC application due to their low forward voltage drops. One of the main disadvantages of the LIGBT is its scow switching speed when compared to the LDMOSFET. And the LIGBT with reverse channel structure is lower current capability than the conventional LIGBT at the forward conduction mode. In this paper, the LIGBT which included p+ ring and p-channel gate is presented at the reverie channel structure. The presented LIGBT structure is proposed to suppress the latch up, efficiently and to improve the turn off time. It is shown to improve the current capability too. It is verified 2-D simulator, MEDICI. It is shown that the latch up current of new LIGBT is 10 times than that of the conventional LIGBT Additionally, it is shown that the turn off characteristics of the proposed LIGBT is i times than that of the conventional LIGBT. It is net presented the tail current of turn off characteristics at the proposed structure. And the presented LIGBT is not n+ buffer layer because it includes p channel gate and p+ ring.