• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.419-422
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• 1999

We prepared CoCr thin film for perpendicular magnetic recording media by facing targets sputtering system(FTS system) which can deposit a high quality thin films in plasma-free state and wide range of working pressure. In this study, we investigated that the effect of sputtering condition , that Argon gas pressure and substrate temperature, on magnetic and crystallographic characteristic of CoCr thin film as well as the variation perpendicular coercivity in changing of film's thickness. Crystallographic and magnetic characteristic of prepared thin films were evaluated by x-ray fractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement.

• 한국전기전자재료학회논문지
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• 제25권7호
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• pp.563-568
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• 2012

Indium tin oxide (ITO) films were prepared using radio frequency (RF) magnetron sputtering method, magnets were equipped near the target in the sputter to bring the plasma near the target. The effect of magnetic field that brings the plasma near the substrate was compared with that of substrate heating. The effect of substrate heating on the grain size of the ITO thin film was larger than that of the magnetic field. However, the grain size of the ITO thin film was larger when the magnetic field was applied near the substrate during the sputtering process than when the substrate was not heated and the magnetic field was not applied. If stronger magnetic field is applied near the substrate during sputtering, it can be expected that the ITO thin film with good electrical conductivity and high transparency is obtained at low substrate temperature. When magnetic field of 90 Gauss was applied near the substrate during sputtering, the mobility of the ITO thin film increased from 15.2 $cm^2/V.s$ to 23.3 $cm^2/V.s$, whereas the sheet resistivity decreased from 7.68 ${\Omega}{\cdot}cm$ to 5.11 ${\Omega}{\cdot}cm$.

• 한국자기학회지
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• 제4권3호
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• pp.256-262
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• 1994

코발트 단위층의 두께가 $2{\AA}$ 및 $4{\AA}$인 두 경우에 대해 막의 총두께가 약 $200{\AA}$인 Co/Pd 다층막을 제조하였으며 이 때 스퍼터링 압력이 자화반전 및 수직자기이방성에 미치는 영향에 대해 연구 하였다. 수직자기이방성 에너저지가 최대치를 보이는 압력이 존재하였으며 $2{\AA}$ 코발트층의 경우 $4{\AA}$ 경우 보다 낮은 압력에서 최대치가 나타났다. 자화시 자구벽 이동은 압력이 높을수록 어려워졌으며 높은 압력에서 는 자구벽 이동으로부터 자기모멘트 회전으로 자화반전기구가 바뀌었다. 또한 코발트층의 두께가 $2{\AA}$인 경우가 $4{\AA}$인 경우보다 수직자기이방성 에너지가 큰 것으로 나타났다.

• 반도체디스플레이기술학회지
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• 제15권3호
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• pp.30-34
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• 2016

We investigated magnetic field, discharged voltage, and as-deposited film uniformity at facing targets sputtering (FTS) system with magnetic field type: i) concentrated and ii) distributed magnetic field type. And Al doped ZnO (AZO) films were prepared at two magnetic field type such as concentrated magnetic field type and distributed magnetic field type, respectively. Discharge voltage at the distribution type is lower than concentration type due to low magnetic flux (middle magnetic flux: Concentration 1200 G and Distribution 600 G). The films deposited at the distributed magnetic field were more uniform than concentration type. All of prepared AZO films had a resistivity of under $10^{-4}[{\Omega}{\cdot}cm]$ and a transmittance of more than 85 % in the visible range.

• 전기학회논문지
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• 제56권12호
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• pp.2179-2183
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• 2007

In this paper, to produce sheet plasma with high density for ion plating, we designed magnetic circuit of ion plating device consisting of solenoid coil and rectangular permanent magnet. And, we analyzed the effects of the magnetic field distribution using FEM (Finite Element Methode). Additionally, we made a sputtering system including ion plating technique on the basis of the design and verified the possibility of the sheet plasma application for advanced sputter system.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권7호
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• pp.326-331
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• 2005

We obtain analytical expressions the magnetic field of ferrites for DC magnetron sputtering device, which has been widely used for vacuum thin film deposition, and suggested the equation on maximum radius of the magnetic field by analytic solution. Also, the analytic results are compared with some calculations using magnetization elements of right-angled hexahedron.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.212-214
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• 1994

At recent time, superconducting technology makes it possible to develop various devices using strong magnetic fields. As increasing with devices using high magnetic fields, magnetic shielding technology is essential in order to get high efficiency. Therefore it is necessary to establish production method and clear characteristics of suitable shielding materials. Usually, ferromagnetic metal has been used for shielding of high magnetic fields up to the present time. Instead of heavy ferromagnetic metal, we can acquire better upgraded shielding system by using of very light superconducting thin film that has a perfect diamagnetism. We would like to study basic characteristics of NbTi thin film produced by RF sputtering, investigated morphology and crystal structure of NbTi thin film by SEM and XRD, identified superconductivity measuring by critical current.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.51.2-51.2
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• 2008

• 한국자기학회지
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• 제5권5호
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• pp.461-464
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• 1995

We have investigated the effects of sputtering Ar gas pressure on magnetic anisotropy of Co/Pt multilayers, where sputtering Ar gas pressure was varied from 2 to 20 mTorr. The surface and volume anisotropies were found to be strongly dependent on sputtering Ar gas pressure. In particular, the surface anisotropy exhibited more than fourfold enhancement as Ar pressure was decreased from 20 to 5 mTorr. We have found that the surface anisotropy was closely correlated with the low-angle x-ray diffraction intensity. We believe that these results are mainly ascribed to the variation of microstructure in the Co/Pt multilayer thin films with sputtering Ar gas pressure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.217-217
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• 2016

The amorphous InGaZnO (a-IGZO) is widely accepted as a promising channel material for thin-film transistor (TFT) applications owing to their outstanding electrical properties [1, 2]. However, a-IGZO TFTs have still suffered from their bias instability with illumination [1-4]. Up to now, many researchers have studied the sub-gap density of states (DOS) as the root cause of instability. It is well known that defect states can influence on the performances and stabilities of a-IGZO TFTs. The defects states should be closely related with the deposition condition, including sputtering power, and pressure. Nevertheless, it has not been reported how these defects are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOIs) can be generated by electron attachment in oxygen atom near target surface and then accelerated up to few hundreds eV by a self-bias; at this time, the high energy bombardment of NOIs induce defects in oxide thin films. Recently, we have reported that the properties of IGZO thin films are strongly related with effects of NOIs which are generated during the sputtering process [5]. From our previous results, the electrical characteristics and the chemical bonding states of a-IGZO thin films were depended with the bombardment energy of NOIs. And also, we suggest that the deep sub-gap states in a-IGZO as well as thin film properties would be influenced by the bombardment of high energetic NOIs during the sputtering process.In this study, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process to prevent the NOIs bombardment effects and present how much to be improved the properties of a-IGZO thin film by this new deposition method. We deposited a-IGZO thin films by MFSS on SiO2/p-Si and glass substrate at various process conditions, after which we investigated the morphology, optical and electrical properties of the a-IGZO thin films.