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Characteristic of AZO Thin Film Deposited by Facing Targets Sputtering with Magnetic Field Type  

Kim, Sangmo (Dept. of Electrical Engineering, Gachon University)
Shin, Keon Yuep (Dept. of Electrical Engineering, Gachon University)
Keum, Min jong (Jusung Engineering Co., Ltd.)
Kim, Kyung Hwan (Dept. of Electrical Engineering, Gachon University)
Publication Information
Journal of the Semiconductor & Display Technology / v.15, no.3, 2016 , pp. 30-34 More about this Journal
Abstract
We investigated magnetic field, discharged voltage, and as-deposited film uniformity at facing targets sputtering (FTS) system with magnetic field type: i) concentrated and ii) distributed magnetic field type. And Al doped ZnO (AZO) films were prepared at two magnetic field type such as concentrated magnetic field type and distributed magnetic field type, respectively. Discharge voltage at the distribution type is lower than concentration type due to low magnetic flux (middle magnetic flux: Concentration 1200 G and Distribution 600 G). The films deposited at the distributed magnetic field were more uniform than concentration type. All of prepared AZO films had a resistivity of under $10^{-4}[{\Omega}{\cdot}cm]$ and a transmittance of more than 85 % in the visible range.
Keywords
FTS; AZO; concentration; distribution; magnetic field;
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