Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Characteristic of AZO Thin Film Deposited by Facing Targets Sputtering with Magnetic Field Type

FTS장치의 자계 분포에 따라 제작된 AZO 박막의 특성

  • Received : 2016.08.17
  • Accepted : 2016.09.19
  • Published : 2016.09.30
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Abstract

We investigated magnetic field, discharged voltage, and as-deposited film uniformity at facing targets sputtering (FTS) system with magnetic field type: i) concentrated and ii) distributed magnetic field type. And Al doped ZnO (AZO) films were prepared at two magnetic field type such as concentrated magnetic field type and distributed magnetic field type, respectively. Discharge voltage at the distribution type is lower than concentration type due to low magnetic flux (middle magnetic flux: Concentration 1200 G and Distribution 600 G). The films deposited at the distributed magnetic field were more uniform than concentration type. All of prepared AZO films had a resistivity of under $10^{-4}[{\Omega}{\cdot}cm]$ and a transmittance of more than 85 % in the visible range.

Keywords

References

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