• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.582-585
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• 2001

InSb temperature dependent hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at 200$^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.21-24
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• 2000

lnSb temperature dependent hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.268-277
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• 1994

Current sensor using Hall device is an instrument of detecting a current by Hall effect. The existing current sensor is ordinarily worked by concentrating electromagnetism produced around the conducting wire turned iron core. The tiny curren, however, could not be accurately detected by the instrument owing to influence of residual magnetism exisisting in iron core, and the result of detecting is also somewhat on the large side. kAccordingly, We fabricated a new type of instrument minimizing the influence of residual magnetism existing in iron core and detected the tiny DC current accurately by taking advantage of magnetic modulation. The range of measuring DC current is 0[mA]-100[mA] and the maxiumm Linerity tolleance by the result of detecting current, can be reduced less than 3 percent.

• Journal of Biomedical Engineering Research
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• v.28 no.6
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• pp.721-726
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• 2007

The study relates to achievement and analysis of 3-dimensional spatial pulse wave archived by a spatially arterial pulse diagnostic apparatus (SAPDA), wherein a pulse sensing part array consists of multiple hall devices and is located over a skin contacting part which consists of a magnetic material. When a radially arterial pulse is transferred to the magnetic material, which is contacted skin that results in changes in a magnetic field of the lower part of the pulse sensing part array, the changes in a magnetic field can be detected by the commercial Hall semiconductor device of the pulse sensing part array. Finally, according to development of SAPDA, the 3-dimensionally arterial pulse waveform can be measured noninvasively by detecting the changes of the magnetic field.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.2
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• pp.52-57
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• 2019

To develop a stirring device that can automatically measure the viscosity of a fluid, the impeller type of the device must be recognized without making contact. In this study, we propose a method to discriminate the type of impellers using the changes in the magnetic field. Permanent magnets are inserted into a hollow hole of the impellers, and the change of the magnetic field is measured by a hall sensor. All experimental results are compared with the FEM analysis results. The results show that with the increase in diameter and length of the magnet inserted into the impeller, the magnitude of the magnetic flux density increases. The magnetic field is more sensitive to the change in the magnet diameter than to the change in magnet length. In order to reduce the machining costs, however, it is advantageous to change the magnet length instead of the magnet diameter.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.3 s.168
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• pp.29-37
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• 2005

In this study, the control of the free surface deformation of a magnetic fluid for the change in electromagnetic force is discussed. The free surface of magnetic fluid is formed by the balance of surface force, gravity, pressure difference, magnetic normal pressure and magnetic body force. Magnetic fluid in characteristics of fluid adjusted to the opposite direction of the gravity direction. Thus, the device of a magnetic fluid proposed the complete zero-leakage sealing, oscillator for surface control, boundary layer control, MHD, flow control, flow using magnetic levitation system and surface actuator. This study show the deformation of surface rise due to the intensity of the magnetic field and possibility of two-dimensional control of magnetic fluid through the feedback data of hall sensor.

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.13-21
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• 1992

We have constructed the magneto-operational amplifier(MOP) using the advantages of Hall device and an operational amplifier. The MOP necessarily requires a high impedance circuit, a differential-to-single-ended convert-sion circuit and feedback-input-element for operational amplifier characteristics. We have presented a new differential-to-single-ended conversion operational amplifier(DSCOP) having such characteristics. We have designed the MOP using the DSCOP and Hall device and simulated its characteristics, and finally we have constructed the system with discrete elements, and measured its magnetic characteristics.

• Journal of Sensor Science and Technology
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• v.20 no.4
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• pp.260-265
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• 2011

The silicon vertical hall devices are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$, interface and n-epi layer without $n^+$buried layer to improve the sensitivity and influence of interface effects. Experimental samples are a sensor type I with and type H without p+isolation dam adjacent to the center current electrode. The experimental results for both type show a more high current-related sensitivity than the former's vertical hall devices. The sensitivity of type H and type I are about 150 V/AT and 340 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

• Journal of Magnetics
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• v.18 no.2
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• pp.183-187
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• 2013

Two concurrent signals of the pulse wave measured from both hands' radial artery in un-pressurization condition using the prototype model of two clip-type pulsimeters with a permanent magnet and Hall device are investigated. The phase differences of two pulse waves from 22 subjects have some distinct points according to the handedness. Thus, the propagation of the pulse wave calculated from phase difference is both fast and slow to each other. It is confirmed that this phenomenon comes from the difference of blood vessel hardness between right- and left-hand of each subject rather than a quantity of muscle.

• Progress in Superconductivity and Cryogenics
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• v.25 no.1
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• pp.1-5
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• 2023

The study of two-dimensional electron systems with extraordinarily low levels of disorder was, for a long time, the exclusive privilege of the epitaxial thin film research community. However, the successful isolation of graphene by mechanical exfoliation has truly disrupted this field. Furthermore, the assembly of heterostructures consisting of several layers of different 2D materials in arbitrary order by exploiting van der Waals forces has been a game-changer in the field of low-dimensional physics. This technique can be generalized to the large class of strictly 2D materials and offers unprecedented parameters to play with in order to tune electronic and other properties. It has led to a paradigm shift in the field of 2D condensed matter physics with bright prospects. In this review article, we discuss three device fabrication techniques towards high mobility devices: suspended structures, dry transfer, and pick-up transfer methods. We also address state-of-the-art device structures, which are fabricated by the van der Waals pick-up transfer method. Finally, we briefly introduce correlated ground states in the fractional quantum Hall regime.