• Journal of Power Electronics
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• 제15권5호
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• pp.1402-1408
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• 2015

A MOSFET's gate driver based on magnetic coupling is investigated. The gate driver can meet the demands in applications for wide range of duty cycles and high frequency. Fully galvanic isolation can be realized, and no auxiliary supply is needed. The driver is insensitive to the leakage inductor of the isolated transformer. No gate resistor is needed to damp the oscillation, and thus the peak output current of the gate driver can be improved. Design of the driving transformer can also be made more flexible, which helps to improve the isolation voltage between the power stage and the control electronics, and aids to enhance the electromagnetic compatibility. The driver's operation principle is analyzed, and the design method for its key parameters is presented. The performance analysis is validated via experiment. The disadvantages of the traditional magnetic coupling and optical coupling have been conquered through the investigated circuit.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2008년도 추계학술대회 논문집
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• pp.218-220
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• 2008

This paper describes buck converter's MOSFET driver for high-brightness LED strings. The power driving high-side MOSFET is supplied from the power source of control circuit part. The practical considerations and future work are also described.

• 대한전자공학회논문지SD
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• 제40권7호
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• pp.474-480
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• 2003

We designed and tested a new scan driver output stage. Compared to conventional CMOS structured scan driver IC′s, the new NMOSFET-only scan driver circuit can reduce the chip area and therefore, the chip cost considerably. We confirmed the circuit operation with open drain power NMOSFET IC′s by driving 2"PDP test panel. We defined critical device parameters and their optimization methods lot the best circuit performance.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.166-170
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• 2003

This paper presents the TTFC(Two Transistor Forward Converter) using Synchronous Rectifier of Compulsory Control-driver. The two transistor forward circuit is used to decrease voltage stress of primary side and the synchronous rectifier is used to reduce current stress of secondary side. Previous synchronous rectifier's MOSFET of TTFC have long dead time This paper presents synchronous rectifier of compulsory control-driver for minimized dead time. This paper compared with diode rectifier, self-driven synchronous rectifier and compulsory control-driver synchronous rectifier of TTFC. The principle of operation, feature and design considerations are illustrated and verified through the experiment with a 200W 100kHz MOSFET based experimental circuit.

• 전력전자학회논문지
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• 제11권2호
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• pp.120-126
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• 2006

본 논문에서는 Multi-level PDP 구동회로의 Sustain 스위치를 구동하기 위해 Boot-strap chain 방식의 Gate driver를 제안한다. 제안된 Gate driver는 한 개의 High-side N-MOSFETS를 구동하기 위해 별도의 Floating power supply 가 필요치 않고 한 쌍의 다이오드와 캐패시터만을 사용한다. 제안 Gate driver 회로를 적용함으로서, Multi-level PDP driver의 가격과 무게 및 부피를 줄일 수 있다.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.970-973
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• 2003

Abstract An idea to redce the direct-path short circuit current of the CMOS digital integrated circuit is present. The sample circuit model of the CMOS digital circuit is the CMOS current-control digital output driver circuit, which are also suitable for the low voltage supply integrated circuits as the simple digital inverter, are present in this title. The circuit consists of active MOS load as the current control source, which construct from the saturated n-channel and p-channel MOSFET and the general CMOS inverter circuits. The saturated MOSFET bias can control the output current and the frequency response of the circuit. The experimental results show that lower short circuit current control can make the lower frequency response of the circuit.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2017년도 전력전자학술대회
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• pp.577-595
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• 2017

${\bullet}$ Silicon Carbide (SiC) had excellent material properties as the base material for next generation of power semiconductor. In developing SiC MOSFET, gate oxide reliability issues had to be first overcome before commercial application. Besides, a high and stable gate-source voltage threshold $V_{GS(th)}$ is also an important parameter for operation robustness. SiC MOSFET with such characteristics can directly use existing high-speed IGBT gate driver IC's. ${\bullet}$ The linear voltage drop characteristics of SiC MOSFET will bring lower conduction loss averaged over full AC cycle compared to similarly rate IGBT. Lower switching loss enable higher switching frequency. Using package with auxiliary source terminal for gate driving will further reduce switching losses. Dynamic characteristics can fully controlled by simple gate resistors. ${\bullet}$ The low switching losses characteristics of SiC MOSFET can substantially reduce power losses in high switching frequency operation. Significant power loss reduction is also possible even at low switching frequency and low switching speed. in T-type 3-level topology, SiC MOSFET solution enable three times higher switching freqeuncy at same efficiency.

• Journal of Advanced Marine Engineering and Technology
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• 제39권1호
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• pp.63-67
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• 2015

백색 발광 다이오드는 조명과 통신이 동시에 가능하여 많은 주목을 받고 있다. 본 논문에서는 고출력 백색 LED와 저가형 광 다이오드, 프레넬 렌즈로 구성된 가시광 통신의 특성을 연구하였다. LED 구동회로는 고전력 MOSFET과 MOSFET 전용 구동칩을 사용하여 LED가 고속으로 온오프 되게 스위칭 하였다. 사용한 LED의 대역폭은 8 MHz로 측정되었다. 그러나 실내 조명환경을 고려한 500 lx 조도 하에서 통신 속도는 PIN 광 다이오드인 SFH213의 낮은 스펙트럼 감도와 낮은 신호전력으로 인해 1 Mbps까지만 가능하였다. 시스템 대역폭을 확장하기 위하여 프레넬 렌즈를 적용한 경우 수신단의 PIN 광 다이오드에 LED의 집광된 광 전력이 입사되도록 하여 LED의 대역폭까지 변조될 수 있었다. 프레넬 렌즈에 의한 신호대 잡음비는 40 dB 이상 향상되었다.

• Progress in Superconductivity
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• 제13권2호
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• pp.105-110
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• 2011

SQUID sensor-based ultra low-field magnetic resonance apparatus with ${\mu}T$-level measurement field requires a strong prepolarization magnetic field ($B_p$) to magnetize its sample and obtain magnetic resonance signal with a high signal-to-noise ratio. This $B_p$ needs to be ramped down very quickly so that it does not interfere with signal acquisition which must take place before the sample magnetization relaxes off. A MOSFET switch-based $B_p$ coil driver has current ramp-down time ($t_{rd}$) that increases with $B_p$ current, which makes it unsuitable for driving high-field $B_p$ coil made of superconducting material. An energy cycling-type current driver has been developed for such a coil. This driver contains a storage capacitor inside a switch in IGBT-diode bridge configuration, which can manipulate how the capacitor is connected between the $B_p$ coil and its current source. The implemented circuit with 1.2 kV-tolerant devices was capable of driving 32 A current into a thick copper-wire solenoid $B_p$ coil with a 182 mm inner diameter, 0.23 H inductance, and 5.4 mT/A magnetic field-to-current ratio. The measured trd was 7.6 ms with a 160 ${\mu}F$ storage capacitor. trd was dependent only on the inductance of the coil and the capacitance of the driver capacitor. This driver is scalable to significantly higher current of superconducting $B_p$ coils without the $t_{rd}$ becoming unacceptably long with higher $B_p$ current.

• 전기전자학회논문지
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• 제20권3호
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• pp.220-225
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• 2016

본 논문은 전류 센싱 FET가 내장되어 있고 온-저항이 낮으며 고전류 구동이 가능한 트렌치 게이트 고 전력 MOSFET를 제안하고 전기적 특성을 분석하였다. 트렌치 게이트 전력 소자는 트렌치 폭 $0.6{\mu}m$, 셀 피치 $3.0{\mu}m$로 제작하였으며 내장된 전류 센싱 FET는 주 전력 MOSFET와 같은 구조이다. 트렌치 게이트 MOSFET의 집적도와 신뢰성을 향상시키기 위하여 자체 정렬 트렌치 식각 기술과 수소 어닐링 기술을 적용하였다. 또한, 문턱전압을 낮게 유지하고 게이트 산화막의 신뢰성을 증가시키기 위하여 열 산화막과 CVD 산화막을 결합한 적층 게이트 산화막 구조를 적용하였다. 실험결과 고밀도 트렌치 게이트 소자의 온-저항은 $24m{\Omega}$, 항복 전압은 100 V로 측정되었다. 측정한 전류 센싱 비율은 약 70 정도이며 게이트 전압변화에 대한 전류 센싱 변화율은 약 5.6 % 이하로 나타났다.