• Journal of Power Electronics
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• v.15 no.5
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• pp.1402-1408
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• 2015

A MOSFET's gate driver based on magnetic coupling is investigated. The gate driver can meet the demands in applications for wide range of duty cycles and high frequency. Fully galvanic isolation can be realized, and no auxiliary supply is needed. The driver is insensitive to the leakage inductor of the isolated transformer. No gate resistor is needed to damp the oscillation, and thus the peak output current of the gate driver can be improved. Design of the driving transformer can also be made more flexible, which helps to improve the isolation voltage between the power stage and the control electronics, and aids to enhance the electromagnetic compatibility. The driver's operation principle is analyzed, and the design method for its key parameters is presented. The performance analysis is validated via experiment. The disadvantages of the traditional magnetic coupling and optical coupling have been conquered through the investigated circuit.

• Proceedings of the KIPE Conference
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• 2008.10a
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• pp.218-220
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• 2008

This paper describes buck converter's MOSFET driver for high-brightness LED strings. The power driving high-side MOSFET is supplied from the power source of control circuit part. The practical considerations and future work are also described.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.7
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• pp.474-480
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• 2003

We designed and tested a new scan driver output stage. Compared to conventional CMOS structured scan driver IC′s, the new NMOSFET-only scan driver circuit can reduce the chip area and therefore, the chip cost considerably. We confirmed the circuit operation with open drain power NMOSFET IC′s by driving 2"PDP test panel. We defined critical device parameters and their optimization methods lot the best circuit performance.

• Proceedings of the KIEE Conference
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• 2003.10b
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• pp.166-170
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• 2003

This paper presents the TTFC(Two Transistor Forward Converter) using Synchronous Rectifier of Compulsory Control-driver. The two transistor forward circuit is used to decrease voltage stress of primary side and the synchronous rectifier is used to reduce current stress of secondary side. Previous synchronous rectifier's MOSFET of TTFC have long dead time This paper presents synchronous rectifier of compulsory control-driver for minimized dead time. This paper compared with diode rectifier, self-driven synchronous rectifier and compulsory control-driver synchronous rectifier of TTFC. The principle of operation, feature and design considerations are illustrated and verified through the experiment with a 200W 100kHz MOSFET based experimental circuit.

• The Transactions of the Korean Institute of Power Electronics
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• v.11 no.2
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• pp.120-126
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• 2006

A gate driver with Boot-strap chain is proposed to drive Multi-level PDP sustain switches. The proposed gate driver uses only one boot-strap capacitor and one diode per each MOSFETs switch without floating power supply. By adoption of this gate driver circuits, the size, weight and the cost of the driver board can be reduced.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.970-973
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• 2003

Abstract An idea to redce the direct-path short circuit current of the CMOS digital integrated circuit is present. The sample circuit model of the CMOS digital circuit is the CMOS current-control digital output driver circuit, which are also suitable for the low voltage supply integrated circuits as the simple digital inverter, are present in this title. The circuit consists of active MOS load as the current control source, which construct from the saturated n-channel and p-channel MOSFET and the general CMOS inverter circuits. The saturated MOSFET bias can control the output current and the frequency response of the circuit. The experimental results show that lower short circuit current control can make the lower frequency response of the circuit.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.577-595
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• 2017

${\bullet}$ Silicon Carbide (SiC) had excellent material properties as the base material for next generation of power semiconductor. In developing SiC MOSFET, gate oxide reliability issues had to be first overcome before commercial application. Besides, a high and stable gate-source voltage threshold $V_{GS(th)}$ is also an important parameter for operation robustness. SiC MOSFET with such characteristics can directly use existing high-speed IGBT gate driver IC's. ${\bullet}$ The linear voltage drop characteristics of SiC MOSFET will bring lower conduction loss averaged over full AC cycle compared to similarly rate IGBT. Lower switching loss enable higher switching frequency. Using package with auxiliary source terminal for gate driving will further reduce switching losses. Dynamic characteristics can fully controlled by simple gate resistors. ${\bullet}$ The low switching losses characteristics of SiC MOSFET can substantially reduce power losses in high switching frequency operation. Significant power loss reduction is also possible even at low switching frequency and low switching speed. in T-type 3-level topology, SiC MOSFET solution enable three times higher switching freqeuncy at same efficiency.

• Journal of Advanced Marine Engineering and Technology
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• v.39 no.1
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• pp.63-67
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• 2015

White light-emitting diode (WLED) is growing interest in using both illumination and communications. This paper reports visible light communication (VLC) composed of a super bright white light-emitting diode, low cost commercial photo-diode and a Fresnel lens. LED driver is consisted of the power MOSFET and MOSFET driver that switches the LED on and off. The modulation bandwidth of the LED used was determined to be 8 MHz. However, it was possible to communicate up to 1 Mbps under illumination of 500 lx because of the weak signal power and a low spectral sensitivity of the SHF213 as a PIN photodiode. In order to enhance the system bandwidth, the LED light was focused on the PIN photodiode by use of the Fresnel lens. As a result of that, visible light link was operated up to modulation bandwidth of the LED. The signal to noise ratio can be improved by 40 dB using an optical concentration at the receiver.

• Progress in Superconductivity
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• v.13 no.2
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• pp.105-110
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• 2011

SQUID sensor-based ultra low-field magnetic resonance apparatus with ${\mu}T$-level measurement field requires a strong prepolarization magnetic field ($B_p$) to magnetize its sample and obtain magnetic resonance signal with a high signal-to-noise ratio. This $B_p$ needs to be ramped down very quickly so that it does not interfere with signal acquisition which must take place before the sample magnetization relaxes off. A MOSFET switch-based $B_p$ coil driver has current ramp-down time ($t_{rd}$) that increases with $B_p$ current, which makes it unsuitable for driving high-field $B_p$ coil made of superconducting material. An energy cycling-type current driver has been developed for such a coil. This driver contains a storage capacitor inside a switch in IGBT-diode bridge configuration, which can manipulate how the capacitor is connected between the $B_p$ coil and its current source. The implemented circuit with 1.2 kV-tolerant devices was capable of driving 32 A current into a thick copper-wire solenoid $B_p$ coil with a 182 mm inner diameter, 0.23 H inductance, and 5.4 mT/A magnetic field-to-current ratio. The measured trd was 7.6 ms with a 160 ${\mu}F$ storage capacitor. trd was dependent only on the inductance of the coil and the capacitance of the driver capacitor. This driver is scalable to significantly higher current of superconducting $B_p$ coils without the $t_{rd}$ becoming unacceptably long with higher $B_p$ current.

• Journal of IKEEE
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• v.20 no.3
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• pp.220-225
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• 2016

In this paer, low on-resistance and high-power trench gate MOSFET (Metal-Oxide-Silicon Field Effect Transistor) incorporating current sensing FET (Field Effect Transistor) is proposed and evaluated. The trench gate power MOSFET was fabricated with $0.6{\mu}m$ trench width and $3.0{\mu}m$ cell pitch. Compared with the main switching MOSFET, the on-chip current sensing FET has the same device structure and geometry. In order to improve cell density and device reliability, self-aligned trench etching and hydrogen annealing techniques were performed. Moreover, maintaining low threshold voltage and simultaneously improving gate oxide relialility, the stacked gate oxide structure combining thermal and CVD (chemical vapor deposition) oxides was adopted. The on-resistance and breakdown voltage of the high density trench gate device were evaluated $24m{\Omega}$ and 100 V, respectively. The measured current sensing ratio and it's variation depending on the gate voltage were approximately 70:1 and less than 5.6 %.