• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.20-26
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• 1993

The base-collector capacitance of an npn bipolar transistor in bipolar or BiCMOS technology has significant influence on the switching performances, and comprises pnjunction component and MOS component. Both components have complicated dependences on the isolation oxide structure, epitaxial doping density, and bias voltage. Analytical/empirical formulas for both components are derived in this paper for a generic isolation structure as a function of epitaxial doping density and bias voltage based on some theoretical understanding and two-dimensional device simulations. These formulas are useful in estimating the effect of device isoation schemes on the switching speed of bipolar transistors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.207-209
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• 2004

Currently, for satisfying the needs of scaled MOSFET's a high quality thin oxide dielectric is desired because the properties of conventional $SiO_2$ film are not acceptable for these very small sized transistors. As an alternative gate dielectric have drawn considerable alternation due to their superior performance and reliability properties over conventional $SiO_2$, to obtain the superior characteristics of ultra thin dielectric films, $N_2O$ grown thin oxynitride has been proposed as a dielectric growtuanneal ambient. In this study the authors observed process characteristics of $N_2O$ grown thin dielectric. In view points of the process characteristics of MOS capacitor, the sheet resistance of 4.07$[\Omega/sq.]$, the film stress of $1.009e^{10}[dyne/cm^2]$, the threshold voltage$(V_t)$ of 0.39[V], the breakdown voltage(BV[V]) of 11.45[V] was measured in PMOS. I could achieve improved electrical characteristics and reliability for deep submicron MOSFET devices with $N_2O$ thin oxide.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.98-104
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• 2006

The conventional burst-mode APC(Automatic Power Control) circuit had an effective structure that was suitable for a low power consumption and a monolithic chip. However, as data rate was increased, it caused errors due to the effect of the zero density. In this paper, we invented a new structured peak-comparator which could compensate the unbalance of the injected currents using double gated MOS and MOS diode. And we proposed a new burst-mode APC adopting it. The new peak-comparator in the proposed APC was very robust to zero density variations maintaining the correct decision point of the current comparison at high data rate. It was also suitable for a low power consumption and a monolithic chip due to lack of large capacitors.

• Journal of Marine Bioscience and Biotechnology
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• v.10 no.1
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• pp.9-17
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• 2018

The aim of this study is to elucidate the biochemical properties of manno-oligosaccharides (MOS) hydrolyzed by extracellular enzyme of Bacillus N3. We strived to characterize the biochemical properties of MOS since N3 can effectively hydrolyzed natural polymannans such as galactomannan (GM) and konjac (glucomannan, KM), respectively. The hydrolysis of GM and KM was applied by the strain N3 in terms of reducing sugars and the highest production of reducing sugars was estimated to be about 750 mg/L and 370 mg/L respectively, which were quantified after 7 days of cultivation in the presence of both substrates. Hydrolysates derived from the hydrolysis of KM showed the significant antioxidant activity based on DPPH and ABTS radical scavenging activity with increasing of tyrosinase inhibitory activity. On the other hand, hydrolysates derived from the hydrolysis of GM showed only ABTS radical scavenging activity without showing significant changes on tyrosinase inhibitory activity. Our data suggest that those biological characteristics may be depend on the primary structure and the size of MOS, which may be useful as potent additives for diet foods.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.17-23
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• 2005

The switching characteristics of MOS-Controlled Thyristor(MCT) is studied with variation of the channel length and impurity concentration in ON and OFF FET channel. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator and PSPICE simulator are used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of channel length and impurity concentration in P and N channel. The channel length and N impurity concentration of the proposed MCT power device show the strong affect on the transient characteristics of current and power. The N channel length affects only on the OFF characteristics of power and anode current, while the N doping concentration in P channel affects on the ON and OFF characteristics.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.12
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• pp.1748-1755
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• 2015

A linear regression is widely used for prediction problem, but it is hard to manage an irregular nature of nonlinear system. Although nonlinear regression methods have been adopted, most of them are only fit to low and limited structure problem with small number of independent variables. However, real-world problem, such as weather prediction required complex nonlinear regression with large number of variables. GP(Genetic Programming) based evolutionary nonlinear regression method is an efficient approach to attach the challenging problem. This paper introduces the improvement of an GP based nonlinear regression method using ADF(Automatically Defined Function). It is believed ADFs allow the evolution of modular solutions and, consequently, improve the performance of the GP technique. The suggested ADF based GP nonlinear regression methods are compared with UM, MLR, and previous GP method for 3 days prediction of wind speed using MOS(Model Output Statistics) for partial South Korean regions. The UM and KLAPS data of 2007-2009, 2011-2013 years are used for experimentation.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.7
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• pp.767-772
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• 2014

As temporary network, ad-hoc network has been effected by structures and implemented environments of networks. In this paper, transmission performance of lattice structure ad-hoc network, which is expected to use in sensor network and IoT(Internet of Things), is analyzed in point of intrusions and countermeasure for intrusion is suggested. In this paper, computer simulation based on NS-2 is used for performance analysis, VoIP(Voice over Internet Protocol) as a widely used service is chosen for performance measure. MOS(Mean Opinion Score) and call connection rate is used as performance parameter. As results of performance analysis, it is shown that for MOS, random network is better then lattice network at intrusion environments, but for call connection rate, lattice network is better then random network.

• Journal of the Korean Ceramic Society
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• v.33 no.5
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• pp.572-582
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• 1996

The porous silicon was prepared in the condition of 70mA/cm2 and 5.10 sec and then oxidized at 800~110$0^{\circ}C$ MOS(Metal Oxide Semiconductor) structure was prepared by Al electrode deposition and analyzed by C-V (Capacitance-Voltage) characteristics. Dielectric constant of oxidized porous silicon was large in the case of low temperature (800, 90$0^{\circ}C$) and short time(20-30min) oxidation and was nearly the same as thermal SiO2 3.9 in the case of high temperature (110$0^{\circ}C$) and long time (above 60 min) It is though to be caused byunoxidized silicon in oxidized porous silicon film and capacitance increase due to surface area increment effect.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.5
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• pp.18-24
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• 2011

In multibit Sigma-Delta Modulator, one of the DEM(Dynamic Element Matching) techniques which is DWA(Data Weighted Averaging) is widely used to get rid of non-linearity caused by mismatching of capacitor that is unit element of feedback DAC. In this paper, by adjusting clock timing used in existing DWA architecture, 2n Register block used for output was replaced with 2n S-R latch block. As a result of this, MOS Tr. can be reduced and extra clock can also be removed. Moreover, two n-bit Register block used to delay n-bit data code is decreased to one n-bit Register. After designing the 3rd 3-bit SC(Switched Capacitor) Sigma-Delta Modulator by using the proposed DWA architecture, 0.1% of mismatching into unit element in input frequency 20 kHz and sampling frequency 2.56 MHz. As a consequence of the simulation, It was able to get the same resolution as the existing architecture and was able to reduce the number of MOS Tr. by 222.

• Journal of IKEEE
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• v.17 no.4
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• pp.428-433
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• 2013

In this study, an 4H-SiC Trench MOS Barrier Schottky (TMBS) rectifier which utilizes the trapezoid mesa structure and the upper half of the trench sidewall is proposed to improve the forward voltage drop and reverse blocking voltage concurrently. The proposed 4H-SiC TMBS rectifier reduces the forward voltage drop by 12% compared to the conventional 4H-SiC TMBS rectifier with the tilted sidewall and improves the reverse blocking voltage by 11% with adjusting the length of the upper sidewall. The Silvaco T-CAD was used to analyze the electrical characteristics.