• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.14 no.5
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• pp.87-93
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• 2014

For n/m=qm+r, there is no simple divisibility rule for simple m=7 such that is the n multiply by m? This problem can be more complex for two or more digits of m. The Dunkels method has been known for generalized divisibility test method, but this method can not compute very large digits number that can not processed by computer. This paper suggests simple and exact divisibility method for m completely irrelevant n and m of digits. The proposed method sets $r_1=n_1n_2{\cdots}n_l(mod m)$ for $n=n_1n_2n_3{\cdots}n_k$, $m=m_1m_2{\cdots}m_l$. Then this method computes $r_i=r_{i-1}{\times}10+n_i(mod m)$, $i=2,3,{\cdots}k-l+1$ and reduces the digits of n one-by-one. The proposed method can be get the quotient and remainder with easy, fast and correct for various n,m experimental data.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.2
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• pp.57-62
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• 2007

Willemite green phosphor powders have been prepared by the metallo-organic decomposition (MOD) method, and the photoluminescence and phase formation were studied as a function of both the firing temperature ($800{\sim}1100^{\circ}C$) and the concentration of Mn activator ($4{\sim}12 mol%$). Under 254 nm excitation source, the emission intensity of the phosphors increased with increasing the firing temperature from 800 to $1000^{\circ}C$. From the XRD analysis, the powders heat-treated above $1000^{\circ}C$ showed willemite crystal structure. The maximum emission intensity was obtained far the phosphors heat-treated at $1000^{\circ}C$ with 8 mol% of Mn content. The concentration quenching was occurred when the Mn concentration exceeded 10 mol%. The phosphor particles showed spherical shapes with the average size of $0.4{\sim}0.5{\mu}m$ by the SEM morphology.

• Progress in Superconductivity
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• v.7 no.1
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• pp.77-82
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• 2005

We report a successful fabrication of high-quality $SmBa_{2}Cu_{3}O_{7-{\delta}}$ (SmBCO) thin films on $LaAlO_3$(LAO)(100) single crystalline substrates by a modified TFA-MOD method. After the pyrolysis heat treatment of spin-coated films up to $400^{\circ}C$, SmBCO films were fired at various temperatures ranging from 810 to $850^{\circ}C$ in a reduced oxygen atmosphere (10 ppm $O_2$ in Ar). Optimally processed SmBCO films exhibited the zero-resistance temperature ($T_{c,zero}$) of 90.2 K and the critical current density ($J_c$) of $0.8\;MA/cm^2$ at 77K in self-field. Compared with the $J_c$ values (normally, > $2\;MA/cm^2$ at 77 K) of MOD-TFA processed YBCO films, rather depressed $J_c$ values in SmBCO films are most probably attributed to the existence of ${\alpha}$-axis oriented grains.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.107-108
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• 2006

High $J_c$ $YBa_2Cu_3O_x$, superconducting films were fabricated by MOD method using fluorine-free dichloroacetic acid(DCA) as chelating solvent for preparing precursor solution. DCA-MOD precursor solution was coated on a single crystal (001) $LaAlO_3$(LAO) substrate by a dip coating method with a speed of 25 mm/min. Coated films were calcined at lower temperature up to $500^{\circ}C$ and Conversion heat treatment was performed at various temperatures of $780{\sim}810^{\circ}C$. SEM observations showed that films have very dense microstructures for the films prepared at the temperature higher than $800^{\circ}C$ regardless of diluting solvent; methanol or 2-methoxyethanol. A High critical current density ($J_c$) of 1.28 $MA/cm^2$ (@77 K and self-field) was obtained for the YBCO film prepared using 2-methoxyethanol as a solvent.

• Korean Journal of Materials Research
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• v.13 no.12
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• pp.801-805
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• 2003

To explore the annealing temperature dependence of dielectric properties $Ta_2$$O_{5}$ thin films were prepared by MOCVD(metal-organic chemical vapor deposition) and MOD(metal-organic decomposition). The $Ta_2$$O_{5}$thin films fabricated MOCVD and MOD were annealed in $O_2$at temperature between 600 and 90$0^{\circ}C$. The measured dielectric constant of both films at 100 KHz was the highest value at $650^{\circ}C$ and decreased with increasing annealing temperature above $650^{\circ}C$. Plane-view SEM image showed that the boundary seems to be crack broke out with increasing annealing temperature. It was confirmed that outbreak of boundary influenced a decrease of dielectric constant with increasing annealing temperature. The leakage current density increased with increasing annealing temperature.

• Superconductivity and Cryogenics
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• v.5 no.2
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• pp.34-37
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• 2003

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.110.2-110
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• 2003

• Journal of the Korea Society of Computer and Information
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• v.19 no.7
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• pp.71-76
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• 2014

There is to be virtually impossible to solve the very large digits of prime number p and q from composite number n=pq using integer factorization in typical public-key cryptosystems, RSA. When the public key e and the composite number n are known but the private key d remains unknown in an asymmetric-key RSA, message decryption is carried out by first obtaining ${\phi}(n)=(p-1)(q-1)=n+1-(p+q)$ and then using a reverse function of $d=e^{-1}(mod{\phi}(n))$. Integer factorization from n to p,q is most widely used to produce ${\phi}(n)$, which has been regarded as mathematically hard. Among various integer factorization methods, the most popularly used is the congruence of squares of $a^2{\equiv}b^2(mod\;n)$, a=(p+q)/2,b=(q-p)/2 which is more commonly used then n/p=q trial division. Despite the availability of a number of congruence of scares methods, however, many of the RSA numbers remain unfactorable. This paper thus proposes an algorithm that directly and immediately obtains ${\phi}(n)$. The proposed algorithm computes $2^k{\beta}_j{\equiv}2^i(mod\;n)$, $0{\leq}i{\leq}{\gamma}-1$, $k=1,2,{\ldots}$ or $2^k{\beta}_j=2{\beta}_j$ for $2^j{\equiv}{\beta}_j(mod\;n)$, $2^{{\gamma}-1}$ < n < $2^{\gamma}$, $j={\gamma}-1,{\gamma},{\gamma}+1$ to obtain the solution. It has been found to be capable of finding an arbitrarily located ${\phi}(n)$ in a range of $n-10{\lfloor}{\sqrt{n}}{\rfloor}$ < ${\phi}(n){\leq}n-2{\lfloor}{\sqrt{n}}{\rfloor}$ much more efficiently than conventional algorithms.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.95-97
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• 2003

Y$_2$O$_3$ buffer layers have been fabricated on Ni tapes via MOD process. Films were annealed either in reductive or oxidative condition Successfully (200) orientated buffer layers were grown. The out-of-plane orientation of film were characterized by Δ$\theta$ is about 5.4$^{\circ}$. Although films prepared with acetic acid contains a large amount of microcrack, those prepared with 2-MOE(2-methoxy ethanol) exhibit a crack-free surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.113-117
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• 1999

SrBi$_2$Ta$_2$$O_{9}$ (SBT) thin films were fabricatcd with different Sr/Bi ratios by MOD. SBT thin films of thickness 2500$\AA$ deposited on Pt/Ti/SiO$_2$/Si were crystallized at $700^{\circ}C$ ~85$0^{\circ}C$ using RTA method. As the Sr/Bi ratio was decreased, dielectric constant and remanent polarization were increased. SrBi$_2$Ta$_2$$O_{9}$ showed a maximum dielectric constant value of $\varepsilon$$_{r}$= 268, and maximum remanent polarization (2Pr) of ~9.86 $\mu$C/$\textrm{cm}^2$ when annealed at 8$0^{\circ}C$ for 8 min.min.n.