• The Korean Journal of Ceramics
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• v.5 no.3
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• pp.230-234
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• 1999

Ti(CN)-0.3mole% $Mo_2C$ ceramics were prepared by pressureless sintering. $Mo_2C$ dissolved in Ti(CN) more easily in a nitrogen environment than in the other environment because nitrogen forced Mo to form a solid solution, (Ti, No)(C, N). A "core-rim" structure developed within the grains. The boundary between the "core" and the rim was delineated by thermal etching in the sample with more than 2 mole% $Mo_2C$. The rim thickness and the grain size decreased as the $Mo_2C$ content increased. The hardness and the flexural strength showed maxima of 18.2 GPa and 1.23 GPa, respectively when the $Mo_2C$ content was 2 mole%. The post-sintering heat treatments improved the properties.oved the properties.

• Journal of Industrial Technology
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• v.21 no.A
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• pp.221-229
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• 2001

The effect of Mo underlayer on the magnetic properties of CoCrTa/Cr films deposited on glass substrates were investigated. The coercivity increased and the coercivity squareness decreased by introducing Mo underlayer. The coercivity increase was attributed to the increase of in-plane c-axis orientation and magnetic isolation of Co grains deposited on Cr/Mo underlayer. The decrease of coercivity squarenesses seemed to be caused by the increase of magnetic isolation. The increase of magnetic isolation of Co grains was attributed to the diffusion of Mo atoms into grain boundaries of Co films and the physical isolation of Co grains. The coercivity of CoCrTa/Cr/Mo showed maximum values at Mo thickness of $400{\AA}$. The appearance of the maximum coercivity at that thickness was attributed to the development of strong $Co(10{\bar{1}}0)$ and $Co(10{\bar{1}}1)$ preferred orientation.

• Journal of the Korean Ceramic Society
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• v.47 no.4
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• pp.319-324
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• 2010

Screen printable $MoSi_2$ paste and its ceramic sheet heater were investigated. $MoSi_2$ powder without $Mo_5Si_3$ second phase, which causes so-called pest phenomena, was synthesized by SHS technique. Over glaze was also developed for preventing pest phenomenon. The maximum temperature of $MoSi_2$ ceramic heater was over $500^{\circ}C$. After several heat up and cooling cycle, the $MoSi_2$ heater reveals pest phenomenon. Conductive $MoSi_2$ paste could be used in electronic ceramics, i.e., MLCC, LTCC, HTCC, and etc.

• Proceedings of the Korean Society for Cognitive Science Conference
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• 2000.05a
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• pp.114-120
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• 2000

본고는 일본어 극어 dare-mo/-demo의 의미를 밝히고 나아가 그 허용맥락을 제시하는 것에 목적을 둔다. 이를 위해 본고는 dare-mo/-demo의 의미가 다음 네 가지 요인에 의해 결정된다고 주장한다: 첫째는 변항적 성격의 비한정사 dare이고 둘째는 고저강세 유형, 셋째는 가능성의 척도(Likelyhood Scale)에 기반한 -mo/demo의 의미, 마지막으로는 이러한 척도를 형성시켜주는 맥락(context)이다. 이 네 가지 요인이 상호 작용하여, daRE-MO/DAre-mo/daRE-DEMO/DAre-demo 각각의 의미를 만들어 낸다. 또한 본고는 dare-mo/-demo의 분포를 통해 드러나는 극어들 사이의 의미 차이를 척도(scale)상의 양(quantity)과 질(quality)이라는 측면에서 제시하였다. 즉 -mo 결합형의 경우 양에 민감한 가능성의 척도가 고려되는 것에 비해, -demo 결합형에서는 양뿐 아니라 질에도 민감한 척도가 고려된다. 그 결과 -demo 결합형들은, 양적 측면과 연관하여 조건/명령/외연적 맥락 등에서 존재 양화의 의미로 해석될 수 있다. 또한 질적인 면에서 하한가(lower bound)까지 허용하는 강한 양보의 의미(derogative sense)를 갖는다는 점에서 특징적이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.987-993
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• 2003

We fabricated thick film monopole antennas using Mo-doped BiNbO$_4$ ceramics and investigated their electrical properties as a function of the Mo-doping concentration. Compared with undoped BiNbO$_4$ ceramics, 10 at.% Mo-doping improved microwave dielectric properties of ceramics by increased sintered density as well as decreased space charge density. Further increase in the Mo-doping concentration caused formation of Bi$_2$MoO$_{6}$ phases, resulting in deterioration of the microwave characteristics. The gain and bandwidth of the ceramic monopole antenna were also greatly affected by the Mo-doping concentration. When Mo-doping concentration was 10 at.%, highest gain of -0.7dBi with lowest bandwidth of 30% at 2.3GHz was obtained.

• Current Photovoltaic Research
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• v.5 no.4
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• pp.145-149
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• 2017

Transition metal dichalcogenides (TMDs) have attracted much attention because of their excellent optical and electrical properties, which are the applications of next generation photoelectric devices. In this study, $MoS_2$, which is a representative material of TMDs, was formed by magnetic sputtering method and surface changes and optical characteristics were changed with thickness variation. In addition, by implementing the photodetector of $MoS_2/p-Si$ structure, it was confirmed that the change of the electrical properties rather than the change of the optical properties according to the thickness change of $MoS_2$ affects the photoresponse ratio of the photodetector. This result can be used to fabricate effective photoelectric devices using $MoS_2$.

• Journal of the Korean institute of surface engineering
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• v.55 no.2
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• pp.77-83
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• 2022

Nanocrystalline MoN coatings were prepared by inductively coupled plasma magnetron sputtering (ICPMS) changing the plasma power from 0 W to 200 W. The properties of the coatings were analyzed by x-ray diffraction, field emission scanning electron microscopy, atomic force microscopy, nanoindentation tester and semiconductor characterization system. As the ICP power increases, the crystal structure of the MoN coatings changed from a mixed phase of γ-Mo₂N and α-Mo to a single phase γ-Mo₂N. MoN coatings deposited by ICPMS at 200 W showed the most compact microstructure with the highest nanoindentation hardness of 27.1 GPa. The electrical resistivity of the coatings decreased from 691.6 μΩ cm to 325.9 μΩ cm as the ICP power increased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.184-190
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• 2008

$CaMoO_4$ crystals with ellipsoid, peanut, dumbbell, and notched sphere shapes were synthesized using a simple precipitation reaction. The morphology of $CaMoO_4$ crystals evolved from ellipsoids, through peanut-like structures and dumbbells, to notched spheres with increasing the concentration of $Ca^{2+}$ and $MoO_4^{2-}$ ions. This morphology evolution of $CaMoO_4$ crystals is attributed to a fractal mechanism. Branched crystal growth started at both ends of the ellipsoids. The peanut-like and dumbbell morphologies were formed by the first and second fractal growths, respectively. Finally, the notched spheres were formed by further fractal growth of dumbbells.

• Journal of radiological science and technology
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• v.24 no.1
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• pp.49-53
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• 2001

A number of radionuclides of interest in nuclear medicine are short lived isotopes that emit only gamma ray. The most of all Dept. of Nuclear Medicine in the hospt. are using the $^{99}Mo-^{99m}Tc$ generator for elution of the short lived isotope $^{99m}TcO_4$. A $^{99}Mo-^{99m}Tc$ generator consists of an alumina column on which $^{99}Mo$ is bound. The parent isotope($^{99}Mo$ : half life 67 hr.) decays to its daughter $^{99m}TcO_4^-$ which is a different element with a shorter half-life. $^{99}Mo$ emitted 41-keV(1.3%), 141-keV(5.6%) 181-keV(6.6%) and 366-keV(1.5%) gamma rays. But $^{99m}TcO_4$ emitted only 140-keV gamma ray. We study about the gamma ray distribution around the $^{99}Mo$ generator. And obtained the result as follows ; 1. Total counted gamma ray from generator smaller in front side than back. 2. The gamma ray emitted from $^{99}Mo$ generator without $^{99m}TcO_4$ vial increased in the back side(Mo column posited side) 3. The gamma ray only from the $^{99m}TcO_4$ vial increased in the front side. 4. Apron can protect gamma ray above 60% of total radiation from the $^{99}Mo$ generator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.1
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• pp.23-26
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• 2017

Mo doped carbon (C:Mo) thin films were fabricated with various Mo target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the surface, structural, and electrical properties of C:Mo films were investigated. UBM sputtered C:Mo thin films exhibited smooth and uniform surfaces. However, the rms surface roughness of C:Mo films were increased with the increase of target power density. Also, the resistivity value of C:Mo film as electrical properties was decreased with the increase of target power density. From the performance of organic thin filml transistor using conductive C:Mo gate electrode, the carrier mobility, threshold voltage, and on/off ratio of drain current (Ion/Ioff) showed $0.16cm^2/V{\cdot}s$, -6.0 V, and $7.7{\times}10^4$, respectively.