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http://dx.doi.org/10.4313/JKEM.2003.16.11.987

The Electrical Properties of Mo-doped BiNbO4 Ceramic Thick Film Monopole Antenna  

서원경 (울산대학교 첨단소재공학부)
허대영 (울산대학교 첨단소재공학부)
최문석 (울산대학교 첨단소재공학부)
안성훈 (울산대학교 전기전자정보시스템공학부)
정천석 (울산대학교 전기전자정보시스템공학부)
이재신 (울산대학교 첨단소재공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.11, 2003 , pp. 987-993 More about this Journal
Abstract
We fabricated thick film monopole antennas using Mo-doped BiNbO$_4$ ceramics and investigated their electrical properties as a function of the Mo-doping concentration. Compared with undoped BiNbO$_4$ ceramics, 10 at.% Mo-doping improved microwave dielectric properties of ceramics by increased sintered density as well as decreased space charge density. Further increase in the Mo-doping concentration caused formation of Bi$_2$MoO$_{6}$ phases, resulting in deterioration of the microwave characteristics. The gain and bandwidth of the ceramic monopole antenna were also greatly affected by the Mo-doping concentration. When Mo-doping concentration was 10 at.%, highest gain of -0.7dBi with lowest bandwidth of 30% at 2.3GHz was obtained.
Keywords
Dielectric constant; Quality value(Q${\times}$$f_o$); Resonant Frequency; Monopole antenna; Bandwidth; Gain;
Citations & Related Records
Times Cited By KSCI : 4  (Citation Analysis)
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