• Electronics and Telecommunications Trends
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• v.37 no.5
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• pp.11-21
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• 2022

GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.1
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• pp.14-19
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• 2010

In this paper, a novel architecture for device miniaturization of multimode interference-based couplers (MMICs) is proposed by replacing conventionally designed MMICs by cascaded two-section stepped-width or stepped-index MMICs. For the 82% cross coupling efficiency in a stepped-width MMIC, the coupling length of device results in just 6.7% length reduction. However, for a stepped-width and stepped-index MMIC, the coupling efficiency increases to 93% and the length reduction of 9% occurs. Furthermore, with additional incorporation of tapered devices, it shows that a compact MMIC can be designed in which the coupling efficiency is 90% and the length is reduced to 25%.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.1
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• pp.123-129
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• 2023

In this paper, the frequency synthesis(FS) MMIC and the receive MMICs were developed for a Ka-band compact radar. Also a compact Ka-band frequency synthesizer and a receiver were developed based on those MMICs. The FS MMIC and the wireless-receiver(WR) MMIC to receive the baseband frequency were manufactured by a 65 nm CMOS process and the front-end(FE) MMIC to receive the Ka-band frequency was manufactured by a 150 nm GaN process. Linear frequency modulation waveform and pulse waveform for the transmit signal were measured by output signal of frequency synthesizer. The measured performance of developed receiver including the FE MMICs and the WR MMIC were ≧ 80 dB gain, ≦ 6 dB noise figure and ≧ 10 dBm at OP1dB. The measurement results of the developed frequency synthesizer and the receiver including the manufactured MMICs showed that they could be applied to Ka-band compact radar.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.13 no.2
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• pp.47-52
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• 2013

A novel architecture to reduce dramatically the coupling length of multimode interference-based couplers (MMICs) is proposed by replacing conventionally designed MMICs by cascaded two-section plasmonic stepped MMICs (PS-MMIC). For the 60% cross power splitting ratio in a stepped-width MMIC, the coupling length of device results in around 42% length reduction. Furthermore, the power splitting ratio and coupling length of plasmonic MMIC just vary around 1~2% along the variation of refractive index. On the contrast, those factors for the variation of MMIC's width strongly vary around 30~40%.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.73-74
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• 1998

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.136-145
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• 2006

Two major processing technologies of GaAs HBT and pHEMT have been released in production at Win Semiconductors corp. to address the strong demands of power amplifiers and switches for both handset and WLAN communications markets. Excellent performance with low processing cost and die shrinkage features is reported from the manufactured MMICs. With the stringent tighter manufacturing quality control WIN has successfully become one of the major pure open foundry house to serve the communication industries. The advancing of both technologies to include E/D-pHEMTs and BiHEMTs likes for multifunctional integration of PA, LNA, switch and logics is also highlighted.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.9
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• pp.28-35
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• 1997

A novel high-Q vertical jinductor for MMICs is proposed and characterized in a wide range of frequencies (DC~10 GHz) using the numerical methods such as the PeEC(partial equivalent element circuit), the FDM (finite difference method) and the MoM (method of moments). Electrical superiority of the vertical inductor to the horizontal is observed in terms of the magnetic flux linkage and the ground screening effect. The veritcal bondwire inductor is designed in consideration of the wire bonding feasibility and the optimum electrical peformance. This structure is also analyzed using the equivalent circuit and compared with the conventional spiral inductors From the calculated results, high Q-factor, inductance, and cut-off frequency are observed to be inherent characteristics of the veritcal bondwire inductor.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.8 no.3
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• pp.83-90
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• 2009

This paper presents the design and measurement of a flight model for a Ku-Band Linearized Channel Amplifier. All MMICs, Variable Gain Amplifier (VGA), Variable Voltage Attenuator ('.IVA), Branch line Coupler and Detector for Pre-distorter are fabricated using a Thin-Film Hybrid process. The performance of the fabricated module is verified through the radio frequency circuit simulation tool and electrical function test in space environment.

• Journal of Satellite, Information and Communications
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• v.1 no.2
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• pp.56-62
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• 2006

This paper describes the MMIC product qualification of the Ka band satellite transponder for the COMS(Communication, Ocean and Meteorological Satellite). Ka-band active equipment for the COMS communications transponder are being developed by using 12 kinds of MMICs which include low noise amplifiers, medium power amplifiers, frequency mixers, frequency multipliers, RF switch, and HEMT attenuator MMIC, Those MMICs had been fabricated at the MMIC production foundry of northrop Grumman Space Technology (Velocium) which is qualified for space application, and experienced in various space programs during past decades. For the MMIC product qualification, Visual inspection and SEM inspection had been performed, and burn-in test for 240 hours and accelerated life-test for 1000 hours had been done on test fixtures of individual MMIC products at $125^{\circ}C$. Additionally, infrared temperature scanning and finite element simulation were performed to analyze and confirm the channel temperature of semiconductor devices on several representatives of those MMIC products that os one of the most important factors in performance degradation and life reduction.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.3
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• pp.271-277
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• 2004

A Si(Silicon) MEMS(Micro Electro Mechanical System) package using a doped lossy Si carrier for CPW(Coplanar Waveguide) MMICs(Microwave and Millimeter-wave Integrated Circuits) is proposed in order to reduce parasitic problems of leakage, coupling and resonance. The proposed chip-carrier scheme is verified by fabricating and measuring a GaAs CPW on the two types of carriers(conductor-back metal, doped lossy Si) in the frequency from 0.5 to 40 ㎓. The proposed MEMS package using the lightly doped lossy(15 Ω$.$cm) Si chip-carrier and the HRS(High Resistivity Silicon, 15 ㏀$.$cm) shows the optimized loss and parasitic problems-free since the doped lossy Si-carrier effectively absorbs and suppresses the resonant leakage. The Si MEMS package for CPW MMICs has an insertion loss of only - 2.0 ㏈ and a power loss of - 7.5 ㏈ at 40 ㎓.