• Title/Summary/Keyword: MEMS sensor

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Micromachined Multiple Gas Sensor for Automotive Ventilation and Air Conditioning Systems (미세기계가공된 자동차 HVAC 시스템용 다중 가스센서)

  • Choi, W.S.;Lee, S.H.;Kim, S.D.;Park, J.S.;Park, H.D.;Min, N.K.
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1637-1638
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    • 2006
  • HVAC 시스템은 쾌적하고 깨끗한 운전환경을 만들어 줌으로써 운전자에게 향상된 안락성과 안전성을 제공한다. 이때 센서는 시시각각으로 변화하는 차실 내외의 환경변화에 대한 정보를 검출하여 HVAC 제어 유니트에 제공한다. 현재 HVAC 시스템에 사용되고 있는 후막 가스센서는 소자 크기와 소비전력이 크고, 제작공정이 까다로워 생산성이 낮은 단점이 있다. 이와 같은 문제점을 해결하기 위해서 최근에는 초소형화, 저소비전력, 대량생산에 의한 저가격화가 가능한 MEMS 가스센서의 연구개발이 활발히 진행되고 있다. 본 연구에서는 MEMS 구조체를 이용한 마이크로 가스센서를 설계 및 제작하였고, 감도특성을 고찰하였다. 가스 감지막은 금속산화물 페이스트를 스크린 프린팅 하는 종래의 방법 대신 MEMS 구조체에 적용 가능한 sol-gel 프로세스에 의해 형성하였다. 또 가스 감지전극과 micro-heater를 동일 평면상에 제작, 공정을 간소화하여 저가화를 시도하였다. MEMS 구조체 위에 제작된 Pt 박막 micro-heater의 인가전압에 따른 발열특성을 조사한 결과, 발열온도가 인가전압에 비례하는 이상적인 선형성을 나타내었으며, $300^{\circ}C$의 동작 온도에 도달하기 위해 65mW 이하의 저전력 동작이 가능하였다. 가스 센서의 감도특성 확인 실험은 CO 가스 10ppm, NO 가스 0.3ppm을 기준으로 수행되었으며, CO 및 NO에 대해 Rs(sensitivity, 가스반응저항/초기저항) 값은 각각 0.753 과 2.416로 우수한 성능을 나타내었다.

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Development and Application of IoT-based Contactless Ultraosonic System (IoT 기반 비접촉 초음파 측정 시스템 개발 및 적용)

  • Kim, Jihwan;Hong, Jinyoung;Kim, Rrulri;Woo, Ukyong;Choi, Hajin
    • Journal of the Korea institute for structural maintenance and inspection
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    • v.24 no.3
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    • pp.70-79
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    • 2020
  • The main objective of this research to develop an IoT based wireless contactless ultrasonic system (ICUS) and its application to concrete structure. The developed system consists of 16 mems, 2Mhz digitizer, amplifying circuit, FPGA, and wifi module, enabling to measure leaky surface waves from concrete specimens without physical coupling process and wires. Multi-channel analysis is performed to improve the accuracy of data analysis, and the velocity of leaky surface waves and acoustics are derived. Field inspection of railroad concrete sleepers is conducted to evaluate the performance of the system and to compare the results with conventional ultrasonic pulse velocity (UPV). As a result of the field inspection, UPV was limited to evaluate damages. This is because crack pattern of railroad sleepers is parallel to ultrasonic ray path and accessibility of the railroad at the field is disadvantageous to contact-based UPV. On the other hand, ICUS possibly detect the damages as reduction of dynamic modulus by up to 59% compared to non-damaged specimen.

Performance analysis of feedback controller for vibratory gyroscope at various vacuum levels

  • Sung, Woon-Tahk;Lee, Jang-Gyu;Kang, Tae-Sam
    • 제어로봇시스템학회:학술대회논문집
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    • 2003.10a
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    • pp.1537-1541
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    • 2003
  • In this paper, presented is a feedback control performance of vibratory gyroscope at various vacuum levels. Micro gyroscope, whose operation is based on the vibrating motion at the vacuum conditions, is highly influenced by the vacuum level of the operating circumstances. In general, we apply the feedback control scheme to the gyroscope in order to improve the performances of the sensor. And control performances of the gyroscope are related to those vacuum levels. So we need investigate the performances of the closed loop control at various vacuum conditions comparing with those of the open loop. The experimental results show that the sensitivity of the closed loop is less than that of the open loop especially in low vacuum conditions. Therefore, there should be trade-off between sensitivity and other sensor performances such as linearity, bandwidth when we apply feedback control to the gyroscope.

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Micromachined MoO3 Gas Sensor with Low Power Consumption of 0.5 Watt

  • Jang, Gun-Eik;Wu Q.H.;Liu C.C.
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.4
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    • pp.173-176
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    • 2005
  • A new $MoO_3$ based microsensor with low power consumption was presented. Typical size of sensor was 5mm in width and 8mm in length. As a sensitive electrode, $MoO_3$ was successfully fabricated by IC technology on pyrex glass of $250{\mu}m$ in thickness. After annealing at $550^{\circ}C$ for 3hrs, the film was fully crystallized and demonstrated as pure $MoO_3$ structure. The grain size of $MoO_3$ was plat like and typical size was about $1{\mu}m$. Based on the results of sensitivity measurement, $MoO_3$ microsensor shows especially high selectivity to $H_2$ reducing gas atmosphere. The applied heater power was lower than 0.5 Watt.

A study on a Glucose Sensor Fabricated by Micromachining (마이크로머시닝 기술을 이용하여 제작한 포도당 센서에 관한 연구)

  • 최석민;노일호;양성준;김창교;유홍진;박효덕
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.451-454
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    • 2001
  • In this study, a micro-glucose sensor was fabricated by micromachining technology and its sensing characteristics were investigated. The 7740 pyrex glass was used as the bottom substrate and anisotropically etched silicon wafer was used as the top substrate. The size of the fabricated microchip is 1.58${\times}$1.58mm$^2$. It is shown that output current exhibits a linear change according to glucose concentration (100 mM ∼ 300 mM). It is also shown that the response time for glucose was within 240 sec. It was followed by a saturation trend within 50 sec. The g1ucose sensor with Fc$\^$+/ exhibits relatively higher sensitivity than that without Fc$\sub$+/ for output current.

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Fabrication of low power NO micro gas senor by using CMOS compatible process (CMOS공정 기반의 저전력 NO 마이크로가스센서의 제작)

  • Shin, Han-Jae;Song, Kap-Duk;Lee, Hong-Jin;Hong, Young-Ho;Lee, Duk-Dong
    • Journal of Sensor Science and Technology
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    • v.17 no.1
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    • pp.35-40
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    • 2008
  • Low power bridge type micro gas sensors were fabricated by micro machining technology with TMAH (Tetra Methyl Ammonium Hydroxide) solution. The sensing devices with different heater materials such as metal and poly-silicon were obtained using CMOS (Complementary Metal Oxide Semiconductor) compatible process. The tellurium films as a sensing layer were deposited on the micro machined substrate using shadow silicon mask. The low power micro gas sensors showed high sensitivity to NO with high speed. The pure tellurium film used micro gas sensor showed good sensitivity than transition metal (Pt, Ti) used tellurium film.

Frequency Characteristics of Micro-cantilever Sensor using Tuning Fork (튜닝포크형 미소 캔틸레버 센서의 주파수 특성)

  • Kim Choong Hyun;Ahn Hyo-Sok
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.14 no.5
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    • pp.35-40
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    • 2005
  • An experimental Investigation of the basic characteristics of a micro-cantilever sensor was performed by inspecting the amplitude and frequency characteristics of a commercial tuning fork (TF). Application of acetone and ethanol with a volume of $1{\mu}l$ on the tine of a vibrating tuning fork causes immediate response in its amplitude and frequency characteristics. It has been shown that the tuning fork has ability to recognize a chemical agent with high sensitivity. The theoretical sensitivity of mass loading is in the range of $\~0.1Hz/ng$. Quartz tuning forks are routinely made using standard microfabrication process, thus suggesting the possibility of microfabrication of micro quart sensors.

Si Micromachining for MEMS-lR Sensor Application (결정의존성 식각/기판접합을 이용한 MEMS용 구조물의 제작)

  • 박흥우;주병권;박윤권;박정호;김철주;염상섭;서상의;오명환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.411-414
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    • 1998
  • In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PT layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PT layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PT layer of c-axial orientation rained thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PT layer were measured, too.

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Si Micromachining for MEMS-IR Sensor Application (결정의존성 식각/기판접합을 이용한 MEMS용 구조물의 제작)

  • 박홍우;주병권;박윤권;박정호;김철주;염상섭;서상회;오명환
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.10
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    • pp.815-819
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    • 1998
  • The silicon-nirtide membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PRO($PbTiO_3$ ) layer for a IR detection was coated on the membrane and its characteristics were measured. The a attack of PTO layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer were eliminated through the method of bonding/etching of silicon wafer. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by the PTO layer were measured, too.

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A Study on Double Sampling Design of CMOS ROIC for Uncooled Bolometer Infrared Sensor using Reference Signal Compensation Circuit (기준신호 보상회로를 이용한 더블 샘플링 방식의 비냉각형 볼로미터 검출회로 설계에 관한 연구)

  • Bae, Young-Seok;Jung, Eun-Sik;Oh, Ju-Hyun;Sung, Man-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.2
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    • pp.89-92
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    • 2010
  • A bolometer sensor used in an infrared thermal imaging system has many advantages on the process because it does not need a separate cooling system and its manufacturing is easy. However the sensitivity of the bolometer is low and the fixed pattern noise(FPN) is large, because the bolometer sensor is made by micro electro mechanical systems (MEMS). These problems can be fixed-by using the high performance readout integrated circuit(ROIC) with noise reduction techniques. In this paper, we propose differential delta sampling circuit to remove the mismatch noise of ROIC itself, the FPN of the bolometer. And for reduction of FPN noise, the reference signal compensation circuit which compensate the reference signal by using on-resistance of MOS transistor was proposed.