• 한국시뮬레이션학회논문지
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• 제26권1호
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• pp.69-75
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• 2017

MCP(Multi-chip Package)는 두 개 이상의 Chip을 적층하여 하나의 패키지로 합친 제품이다. MCP를 만들기 위해서는 두 개 이상의 Chip이 동일한 Substrate에 적층되기 때문에 다수의 조립 공정이 필요하다. Package 공정에서는 Lot들이 동일한 특성을 가지는 Chip으로 구성되고 MCP를 구성하는 Chip의 특성은 Layer sequence에 의해 결정된다. MCP 생산 공정에서 WIP Balance 뿐만 아니라 Throughput을 달성하기 위해서는 Chip의 Layer sequence가 중요하다. 본 논문에서는 Chip들의 Layer sequence의 제약 조건을 고려한 스케쥴링 방법론을 제안한다.

• 한국전기전자재료학회논문지
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• 제18권6호
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• pp.506-509
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• 2005

This paper presents the improved burn-in method for the reliability of SRAM in Multi Chip Package (MCP). Semiconductor reliability is commonly improved by the burn-in process. Reliability Problem is very significant in the MCP which includes over two chips in a package because the failure of one SRAM chip has a large influence on the yield and quality of the other chips such as Flash Memory, DRAM, etc. Therefore the quality of SRAM must be guaranteed. To improve the qualify of SRAM, we applied the improved wafer level burn-in process using multi cell selection method in addition to the previously used methods and it is found to be effective in detecting particular failures. Finally, with the composition of some kinds of methods, we achieved the high quality of SRAM in MCP.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.653-654
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• 2010

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.53-56
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• 2004

This paper presents the improved burn-in method for the reliability of SRAM in MCP Semiconductor reliability is commonly improved through the burn-in process. Reliability problem is more significant in the Multi Chip Package, because of including over two devices in a package. In the SRAM-based Multi Chip Package, the failure of SRAM has a large effect on the yield and quality of the other chips - Flash Memory, DRAM, etc. So, the quality of SRAM must be guaranteed. To improve the quality of SRAM, we applied the improved wafer level burn-in process using multi cell selection method in addition to the current used methods. That method is effective in detecting special failure. Finally, with the composition of some kinds of methods, we could achieve the high qualify of SRAM in Multi Chip Package.

• Transactions on Electrical and Electronic Materials
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• 제5권4호
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• pp.138-142
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• 2004

This paper presents the improved bum-in method for the reliability of SRAM in Multi Chip Package (MCP). Semiconductor reliability is commonly improved through the bum-in process. Reliability problem is more significant in MCP that includes over two chips in a package, because the failure of one chip (SRAM) has a large influence on the yield and quality of the other chips - Flash Memory, DRAM, etc. Therefore, the quality of SRAM must be guaranteed. To improve the quality of SRAM, we applied the improved wafer level bum-in process using multi cells selection method in addition to the previously used methods. That method is effective in detecting special failure. Finally, with the composition of some kind of methods, we could achieve the high quality of SRAM in Multi Chip Package.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.665-666
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• 2010

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2011년도 춘계학술대회 논문집
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• pp.757-758
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• 2011

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.1097-1098
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• 2013

• 한국산학기술학회논문지
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• 제12권3호
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• pp.1479-1487
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• 2011

모바일 IT기기 등의 전자부품 분야에서 다기능, 고용량 메모리를 가능하게 하는 패키지의 중요성이 점차 증대되고 있다. 이러한 목적으로 여러개의 칩을 하나의 패키지에 실장하여 다기능, 고용량을 구현하는 Multi Chip Package(MCP)가 활용되고 있다. 이러한 MCP에서 칩과 칩간 접합 혹은 칩과 지지부재(substrate)간 접합을 구현하기위해 에폭시계 필름형 접착제가 사용되고 있다. 에폭시, 아민, 머캡탄, 아이소시아네이트 등의 유기 반응기를 가진 실란커플링제를 적용하여 에폭시계 필름형 접착제에 대한 점착성과 신뢰성을 확인하였다. 결과로부터 에폭시계 반응기를 가진 실란커플링제를 적용한 시료의 점착성과 필특성이 가장 뛰어났으며, 내습 테스트에서 계면파괴가 억제되어 가장 좋은 신뢰성을 나타내었다.

• 반도체디스플레이기술학회지
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• 제6권1호
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• pp.17-22
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• 2007

Recent new packages such as MCP(Multi-Chip Package), QDP(Quadratic Die Package) and DDP(Dual Die Package) have stack type configuration. This kind of multi-layer package is thicker than single layer package. So there is need for the low height looping technology in wirebonder to make these packages thinner. There is stiff zone above ball in wirebonder wire which is called HAZ(Heat Affect Zone). When making low height loop (below $80\;{\mu}m$) with traditional forward loop, stiff wire in HAZ(Heat Affected Zone) above ball is bended and weakened. So the traditional forward looping method cannot be applied to low height loop. SSB(stand-off stitch) wire bonding method was applied to many packages which require very low loops. The drawback of SSB method is making frequent errors at making ball, neck damage above ball on lead and the weakness of ball bonding on lead. The alternative looping method is BNL(ball neckless) looping technology which is already applied to some package(DDP, QDP). The advantage of this method is faster in bonding process and making little errors in wire bonding compared with SSB method. This paper presents the result of BNL looping technology applied in assembly house and several issues related to low loop height consistence and BNL zone weakness.