• Journal of Electrical Engineering and Technology
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• v.11 no.6
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• pp.1763-1768
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• 2016

This paper presents the electrical characteristics of the gallium nitride (GaN) current aperture vertical electron transistor (CAVET) by using two-dimensional (2-D) technology computer-aided design (TCAD) simulations. The CAVETs are considered as the alternative device due to their high breakdown voltage and high integration density in the high-power applications. The optimized design for the CAVET focused on the electrical performances according to the different gate-source length ($L_{GS}$) and aperture length ($L_{AP}$). We analyze DC and RF parameters inducing on-state current ($I_{on}$), threshold voltage ($V_t$), breakdown voltage ($V_B$), transconductance ($g_m$), gate capacitance ($C_{gg}$), cut-off frequency ($f_T$), and maximum oscillation frequency ($f_{max}$).

• The Korean Journal of Quaternary Research
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• v.17 no.2
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• pp.139-144
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• 2003

The purpose of this study is to identify the species and to date the woods used in the Keunjung-jeon Hall, main building of the Kyungbok palace in Seoul. Samples (144) were divided into two parts, pillars (52) and other wood materials (92). Only two species were identified. They were Abies holophylla Max. and Pinus densiflora Sieb. et Zucc.Eleven among 20 Pyungju (outer pillars) were Abies holophylla, and 9 were Pinus densiflora. Seven among 12 Naejinkoju (inner pillars) were Abies holophylla, and 5 were Pinus densiflora. Three among 4 Gwikoju (inner corner pillars) were Abies holophylla, and one was Pinus densiflora. In the other wood materials, only 2 of 92 were Abies holophylla, and the others were Pinus densiflora. Tree-ring dating proved that this building was reconstructed during late 1860s. It also revealed that the old woods cut in the 17th century were reused.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.6 no.3
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• pp.65-70
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• 2007

Generally, the core component of small precise optical device demands high accuracy of manufacturing processes. Although, the geometry of it is simple, the manufacturing technique to materialize is categorized as the ultra-precision machining and it must be done with the specialized machines and by the trained operator. Typical examples of small precise optical device are laser printer and phone camera. As a core part of laser printer, polygon mirror is used in laser scanning unit(LSU). It couldn't be fabricated with conventional machine but specified machine for polygon mirror machining. In this study, Polygon mirror with 16 surfaces was manufactured in the process of ultra-precision fly-cutting with Al material and investigated optimum machining conditions in terms of feedrate, pitch per cycle and depth of cut. Owing to process of polishing has bad influence on reflection angle, surface roughness, $R_{max}$=10nm, and form error, $Ra={\lambda}/10({\lambda}=632nm)$, are prerequisites for polygon mirror.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.66-72
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• 1995

Using the Si/SiGe layer grown by solid source molecular beam epitaxy(SSMBE) on the LOCOS-patterned wafers, an emitter-base self-aligned hterojunction biplar transistor(HBT) with the polysilicon-emitter and the silicon germanium(SiGe) base has been fabricated. Trech isolation process, planarization process using a chemical-mechanical poliching, and the selectively implanted collector(SIC) process were performed. A titanium disilicide (TiSi$_{2}$), as a base electrode, was used to reduce an extrinsic base resistance. To prevent the strain relaxation of the SiGe epitaxial layer, low temperature (820${^\circ}C$) annealing process was applied for the emitter-base junction formation and the dopant activation in the arsenic-implanted polysilicon. For the self-aligned Si/SiGe HBT of 0.9${\times}3.8{\mu}m^{2}$ emitter size, a cut-off requency (f$_{T}$) of 17GHz, a maximum oscillation frequency (f$_{max}$) of 10GHz, a current gian (h$_{FE}$) of 140, and an emitter-collector breakdown voltage (BV$_{CEO}$) of 3.2V have been typically achieved.

• ETRI Journal
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• v.31 no.6
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• pp.749-754
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• 2009

The design and performance of an InGaAs/InP transimpedance amplifier and post amplifier for 40 Gb/s receiver applications are presented. We fabricated the 40 Gb/s transimpedance amplifier and post amplifier using InGaAs/InP heterojunction bipolar transistor (HBT) technology. The developed InGaAs/InP HBTs show a cut-off frequency ($f_T$) of 129 GHz and a maximum oscillation frequency ($f_{max}$) of 175 GHz. The developed transimpedance amplifier provides a bandwidth of 33.5 GHz and a gain of 40.1 $dB{\Omega}$. A 40 Gb/s data clean eye with 146 mV amplitude of the transimpedance amplifier module is achieved. The fabricated post amplifier demonstrates a very wide bandwidth of 36 GHz and a gain of 20.2 dB. The post-amplifier module was fabricated using a Teflon PCB substrate and shows a good eye opening and an output voltage swing above 520 mV.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.553-554
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• 2006

In this paper, 77 GHz CPW power amplifier MMIC, which are consisted of a 2 stage driver stage and a power stage employing $8{\times}50um$ gate width, have been successfully developed by using 120nm $In_{0.4}AlAs/In_{0.35}GaAs$ Metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance $g_m$ of 660 mS/mm, a maximum drain current of 700 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency ($f_T$) of 172 GHz and a maximum oscillation frequency ($f_{max}$) of over 300 GHz are achieved. The fabricated PA exhibited high power gain of 20dB only with 3 stages. The output power is measured to be 12.5 dBm.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.85-90
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• 2002

$RuO_2$/GaN and related contacts were investigated for Schottky contacts in GaN-Based optical and electronic devices. We demonstrated that an $RuO_2$ film forms a stable Schottky contact on a GaN layer with a barrier height (${\Phi}_B$) of 1.46 eV and transmittance of 70% in the visible and near UV region. $RuO_2$/GaN Schottky diode showed a breakdown at over -50V and leakage current of only 0.3 nA at -5V. The $RuO_2$/GaN Schottky type photodetector had the UV/Visible rejection ratio of over $10^5$ and the responsivity of 0.23 A/W at 330 nm. The $RuO_2$ gate AlGaN/GaN EFET exhibited high drain current ($I_d$) of 689.3 mA/mm and high transconductance ($g_m$) of 197.4 mS/mm. Cut-Off frequency ($f_t$) and maximum operating frequency ($f_{max}$) were measured as 27.0 GHz and 45.5 GHz, respectively.

• Journal of the Korean Society of Industry Convergence
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• v.5 no.4
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• pp.367-372
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• 2002

Experimental study was conducted for lapping process after WEDMed specimen. In order to decide the lapping depth of the specimen, the number of the grain size was increased from 400, 600 to 800 to obtain the better surface. Observation of scanning electron microscope, hardness test, surface roughness test and energy dispersive spectrum(EDS) analysis were used for this experimental study. From the comparison and analyses of the results of between the wire-cut electrical discharge machining and the lapping, the following results were obtained. The surface roughness after lapping was found to be improved as increasing the number of lapping process like 1st, 2nd, 3rd lapping and the number of grain size such as 400, 600, 800. The surface hardness after increasing the lapping depth of the specimen was slowly increased. It was found that after 3rd lapping process the hardness was reached the hardness of original base material. It was found that the small amount of coating components within 3% was remained after the 1st lapping process, compared to that approximately 16% after WEDM process.

• Nuclear Engineering and Technology
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• v.54 no.8
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• pp.2871-2876
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• 2022

The sensitivity of polymer-based capacitive relative humidity (RH) sensors after irradiation with neutrons, electrons and protons was measured. Degradation consists of the decreasing of the upper RH limit that can be measured. At the same time, low RH-level sensitivity is almost stable. After 30 krad of absorption dose, RH cut off is equal to 85% of max value, after 60 krad-40%. Degradation reduces after annealing which indicates high radiation sensitivity of the internal circuit in comparison to RH-sensing polymer film.

• Journal of the Korean Geotechnical Society
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• v.20 no.9
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• pp.57-64
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• 2004

In order to establish the design method of anchored retention walls in cut slope, the behavior of anchored retention walls and backside ground needs to be investigated and checked in detail. In this study, the behavior of anchored retention walls was investigated by instrumentation installed in cut slope for an apartment construction site stabilized by a row of piles and anchored retention walls. When the anchor was installed at each excavating stages, the horizontal deflection of retention wall decreased, while the horizontal deformation of backside ground increased. The deflection of anchored retention wall decreased as the anchor was prestressed. The prestressed anchor farce has a great effect on the deflection of retention walls, while it has little effect on the deformation of its backside ground. The maximum horizontal deflection of anchored retention walls was developed between $1\%\;and\;4\%$ of excavation depth, which are $2\~8$ times larger than max. horizontal deflection of anchored retention walls including rock layers with backside horizontal ground. Meanwhile, SLOPILE (ver. 3.0) program analyzes the slope stability effects for anchored retention walls. As a result of analysis on slope stability analysis, the lateral earth pressure applied at anchored retention piles could be used as the mean values of empirical lateral pressures using anchored retention wall with horizontal ground at its backside.