• The Bulletin of The Korean Astronomical Society
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• v.40 no.2
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• pp.35.2-35.2
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• 2015

We present the results of simultaneous observations of the H2O and SiO masers emitted from the circumstellar envelopes (CSEs) of the late-type stars. These observations have been carried out at the four frequency bands (K, Q, W and D bands) using KVN to apply the source frequency phase referencing (SFPR) analysis to the maser lines. We obtain the relative positions between the H2O and the SiO maser spots by using the SFPR method, which are very important to study the physical links between the inner and the outer parts of the CSEs of the late-type stars. The relative positions between the SiO maser spots of the different transitions are also obtained very accurately, which are very crucial to investigate the pumping mechanism of the SiO maser lines. From our results, the capability of the simultaneous multi-band observation of KVN is proved to be powerful to study the complicated physical environments of the CSEs and the stellar evolution of the late-type stars.

• ETRI Journal
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• v.27 no.2
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• pp.133-139
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• 2005

A monolithic microwave integrated circuit (MMIC) chip set consisting of a power amplifier, a driver amplifier, and a frequency doubler has been developed for automotive radar systems at 77 GHz. The chip set was fabricated using a 0.15 ${\mu}$ gate-length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76 to 77 GHz with 15.5 dBm output power. The chip size is 2mm${\times}$ 2mm. The driver amplifier exhibited a gain of 23 dB over a 76 to 77 GHz band with an output power of 13 dBm. The chip size is 2.1mm${\times}$ 2mm. The frequency doubler achieved an output power of -6 dBm at 76.5 GHz with a conversion gain of -16 dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2mm ${\times}$ 1.2mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in a W-band.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.179-192
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• 2008

A multiphase compensation method with mismatch linearization technique, is presented and demonstrated in a $\Sigma-\Delta$ fractional-N frequency synthesizer. An on-chip delay-locked loop (DLL) and a proposed delay line structure are constructed to provide multiphase compensation on $\Sigma-\Delta$ quantizetion noise. In the delay line structure, dynamic element matching (DEM) techniques are employed for mismatch linearization. The proposed $\Sigma-\Delta$ fractional-N frequency synthesizer is fabricated in a $0.18-{\mu}m$ CMOS technology with 2.14-GHz output frequency and 4-Hz resolution. The die size is 0.92 mm$\times$1.15 mm, and it consumes 27.2 mW. In-band phase noise of -82 dBc/Hz at 10 kHz offset and out-of-band phase noise of -103 dBc/Hz at 1 MHz offset are measured with a loop bandwidth of 200 kHz. The settling time is shorter than $25{\mu}s$.

• Journal of electromagnetic engineering and science
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• v.11 no.1
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• pp.27-33
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• 2011

In this paper, we propose a high gain, current reused ultra wideband (UWB) low noise amplifier (LNA) that uses TSMC 0.18 ${\mu}m$ CMOS technology. To satisfy the wide input matching and high voltage gain requirements with low power consumption, a resistive current reused technique is utilized in the first stage. A ${\pi}$-type LC network is adopted in the second stage to achieve sufficient gain over the entire frequency band. The proposed UWB LNA has a voltage gain of 12.9~18.1 dB and a noise figure (NF) of 4.05~6.21 dB over the frequency band of interest (1~10 GHz). The total power consumption of the proposed UWB LNA is 10.1 mW from a 1.4 V supply voltage, and the chip area is $0.95{\times}0.9$ mm.

• Journal of electromagnetic engineering and science
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• v.14 no.2
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• pp.47-53
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• 2014

This paper presents a high gain and high harmonic rejection low-noise amplifier (LNA) for software-defined radio receiver. This LNA exploits the high quality factor (Q) series resonance technique. High Q series resonance can amplify the in-band signal voltage and attenuate the out-band signals. This is achieved by a source impedance transformation. This technique does not consume power and can easily support multiband operation. The chip is fabricated in a $0.13-{\mu}m$ CMOS. It supports four bands (640, 710, 830, and 1,070MHz). The measured forward gain ($S_{21}$) is between 12.1 and 17.4 dB and the noise figure is between 2.7 and 3.3 dB. The IIP3 measures between -5.7 and -10.8 dBm, and the third harmonic rejection ratios are more than 30 dB. The LNA consumes 9.6 mW from a 1.2-V supply.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.97-105
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• 2021

The terahertz wave (THz wave) is a band between infrared and microwaves and is defined as an electromagnetic wave having a frequency of 0.1 to 10 THz band. THz waves have the property of transmitting nonpolar materials, which the visible light cannot be transmitted, such as ceramics, plastics, and paper; and the photon energy is low, such as several meV. For this reason, non-destructive testing equipment based on THz imaging technology can be applied to the industrial field. Recently, THz imaging technology was applied in wide industrial fields, such as automobiles, batteries, food, medical, and security, and being actively studied. In this paper, we describe the research trends of terahertz imaging technology and experimental results. Furthermore, we summarize the recent commercialized terahertz camera. Finally, we present the research results in the field of the human security scanner system.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.7
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• pp.1344-1349
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• 2012

The Korean DGPS station transmits the 200 bps GPS enhancement signal using the MSK modulation in frequency range of 283.5 kHz to 325 kHz. The land-based stations of 6 sites provide the service area of 80 km with the output power of 500 W. The ocean-based stations of 11 sites provide the output power of 300 W, which provide the DGPS service to 185 kM. Some places are serviced from two or three DGPS stations. The interferences among the DGPS stations using the high power can be occurred. Also, the performances of the user terminasl in dual service area can be degraded. In this paper, the protection ratios for the DGPS service are defined. Using the MF wave propagation model, the interferences among the DGPS stations and the adjacent wireless ground stations are analyzed. Also, the performances of DGPS user terminals are analyzed in the viewpoint of interference.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.11 no.2
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• pp.1-6
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• 2011

In this paper, an 1.5Gbit/s wireless data transmission system using the carrier frequency of 300 GHz band was implemented. The RF front-end was composed of schottky diode sub-harmonic mixer, frequency tripler, and horn antennas for transmitter and receiver, respectively. The LO frequencies of sub-harmonic mixer are 150GHz for transmit chain and 156GHz for receive chain. The ASK(Amplitude Shift Keying) modulation was used in the transmitter and the envelope detection method was used in the heterodyne receiver. The conversion loss of sub-harmonic mixer and implementation system loss were measured to be 9.8dB and 1.2dB, respectively. The 1.5Gbit/s video signal with HD-SDI format was transmitted over wireless distance of 40cm without optical lens(4.2m with optical lens) and displayed on HDTV at the transmitted average output power of $20{\mu}W$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.5
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• pp.510-518
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• 2010

In this paper, the designed and implemented results of CFL linearization chip which can be used in mobile radio and TRS terminal of UHF band(380~910 MHz), using $0.6\;{\mu}m$ BiCMOS process based on Si, are shown. As gain control circuits for modifying transmit power are inserted not only in feedback path but also in forward path, the stability of CFL is maintained. And, DC-offset correction function of S/H structure, which is suitable for walkie-talkie PTT operation and is easily implemented, is realized. The performance test results of transmitter show that the regulation of FCC emission mask at PEP 3 W(34.8 dBm) is satisfied when the CQPSK modulated signal is fed and more than 30 dBc improvement of 3rd order IMD is achieved when two-tone signal is inputted.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.1
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• pp.9-15
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• 2015

A CMOS band-pass delta-sigma modulator(BPDSM) and cascode class-E power amplifier have been developed CMOS for Class-S power amplifier applications. The BPDSM is operating at 1-GHz sampling frequency, which converts a 250-MHz sinusoidal signal to a pulse-width modulated digital signal without the quantization noise. The BPDSM shows a 25-dB SQNR(Signal to Quantization Noise Ratio) and consumes a power of 24 mW at an 1.2-V supply voltage. The class-E power amplifier exhibits an 18.1 dBm of the maximum output power with a 25% drain efficiency at a 3.3-V supply voltage. The BPDSM and class-E PA were fabricated in the Dongbu's 110-nm CMOS process.