• Title/Summary/Keyword: Low-temperature conductive film

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Low Temperature Synthesis of TiO2 Films for Application to Dye-sensitized Solar Cells

  • Wi, Jin-Seong;Choe, Eun-Chang;Seo, Yeong-Ho;Hong, Byeong-Yu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.475-475
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    • 2014
  • Dye sensitized solar cells (DSSCs) are regarded as potential inexpensive alternatives to conventional solid-state devices. The flexible version, employing conductive-plastic-film substrates, is appealing for commercialization of DSSCs because it not only reduces the weight and cost of the device but also extends their applications. However, the need for high temperature does not permit the use of plastic-film substrate. So, development of low-temperature methods is therefore realization of flexible DSSCs. In this work, the electrophoretic deposition combined with hydrothermal treatment was employed to prepare nanocrystalline $TiO_2$ thin film at low temperature. We confirmed the prepared $TiO_2$ thin films with different voltages and deposition times in the electrophoretic deposition process. Properties of the $TiO_2$ films were investigated by various analysis method such as X-ray diffraction, field emission scanning electron microscopy (FESEM) and UV-visible spectrophotometer.

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ARAS coating with a conducting polymer (전도성 고분자를 이용한 ARAS 코팅)

  • 김태영;이보현;김종은;서광석
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.1039-1042
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    • 2001
  • A method for designing antireflection (AR) and antistatic (AS) films by the use of conducting polymer as an electrically conductive transparent layer is proposed. The conducting AR film is composed of four-layer with alternating high and low refractive index layer: silicon dioxide (n=1.44) and titanium dioxide (n=2.02) prepared at low temperature by sol-gel method are used as the low and high refractive index layer, respectively. The 3,4-polyethylenedioxythiophene (PEDOT) which has the sheet resistance of 10$^4$$\Omega$/$\square$ is used as a conductive layer. Optical constant of ARAS film was measured by the spectroscopic ellipsometer and from the measured optical constants the spectral properties such as reflectance and transmittance were simulated in the visible region. The reflectance of ARAS films on glass substrate was below 0.8 %R and the transmittance was higher than 95 % in the visible wavelength (400-700 nm). The measured AR spectral properties was very similar to its simulated results.

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Application in Conductive Filler by Low-Temperature Densification and Synthesis of Core-Shell Structure Powder for Prevention from Copper Oxidation (구리 산화 방지를 위한 Core-Shell 구조 입자 합성과 저온 치밀화를 통한 도전성 필러 응용)

  • Shim, Young Ho;Park, Seong-Dae;Kim, Hee Taik
    • Applied Chemistry for Engineering
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    • v.23 no.6
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    • pp.554-560
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    • 2012
  • Recently, it has been increasing trend to use conductive materials as electronics and communication technology in electronics industry are developing. The noble metal such as Ag, Pt, Pd etc. are mostly used as conductive materials, To reduce production cost, alternative materials with similar characteristics of noble metals are needed. Copper has advantages, i.e its electronic properties are similar to noble metals and low cost than noble metal, but its use has been restricted because of oxidation in air. In this study, the tin film was coated on copper by electroless plating to protect copper from oxidation and to confirm the effects of temperature, pH, amount of $SnCl_2$, and feeding speed in plating conditions. Additionally, we apply $Cu_{core}Sn_{shell}$ powder as conductive filler with low-temperature densification and analysis by SEM, XRD, FIB and 4-Point Probe techniques. As result of the study, tin film was coated well on copper and was protected from oxidation. After low-temperature densification treatment, the meted tin made chemical interconnections with copper. Accordingly, conductivity was increased than before condition. We hope $Cu_{core}Sn_{shell}$ powder to replace noble metals and use in the electronic field.

The Deposition and Properties of Surface Textured ZnO:Al Films (표면 텍스쳐된 ZnO:Al 투명전도막 증착 및 특성)

  • 유진수;이정철;김석기;윤경훈;박이준;이준신
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.9
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    • pp.378-382
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    • 2003
  • Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure md the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures ($\leq$$300^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

The fabrication and properties of surface textured ZnO:Al films (Surface Textured ZnO:Al 투명전도막 제작 및 특성)

  • 유진수;이정철;강기환;김석기;윤경훈;송진수;박이준
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.391-394
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    • 2002
  • Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology Properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9 mTorr) and high substrate temperatures ($\leq$30$0^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

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Development of a Chip Bonding Technology for Plastic Film LCDs

  • Park, S.K.;Han, J.I.;Kim, W.K.;Kwak, M.K.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.89-90
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    • 2000
  • A new technology realizing interconnection between Plastic Film LCDs panel and a driving circuit was developed under the processing condition of low temperature and pressure with ACFs developed for Plastic Film LCDs. The conduction failure of interconnection of the two resulted from elasticity, low thermal resistance and high thermal expansion of plastic substrates. Conductive particles with elasticity similar to the plastic substrate did not damaged a ITO electrode on plastic substrates, and low temperature and pressure process also did not deform the surface of plastic substrates. As a result highly reliable interconnection with minimum contact resistance was accomplished.

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The Study on Characteristics of Green Organic Light Emitting Device with Transparency Conductive Oxide Electrodes (투명전도성 산화물 전극에 따른 Green OLED의 특성연구)

  • Ki, Hyun-Chul;Kim, Seon-Hoon;Kim, Hwe-Jong;Kim, Sang-Gi;Choi, Young-Sung;Hong, Kyung-Jin
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.58 no.4
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    • pp.615-618
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    • 2009
  • In order to apply for transparent conductive oxide(TCO), we deposited ZnO thin film on the glass at room temperature by RF magnetron sputtering method. Deposition conditions for low resistivity were optimized in our previous studies. Under the deposition condition with the RF power of 800 [W]. Sheet resistance and surface roughness of ITO and ZnO thin film were measured by Hall-effect measurement system and AFM, respectively. The sheet resistance of ITO and ZnO thin film were 7.290 [$\Omega$] and 4.882 [$\Omega$], respectively. and surface roughness were 3.634 [nm] and 0.491 [nm], respectively. Green OLED was fabricated with the structure of TPD(400 [$\AA$])/Alq3(600 [$\AA$])/LiF(5 [$\AA$])/Al(1200 [$\AA$]). Turn-on voltage of green OLED applied ITO was 7 [V] and luminance was 7,371 [$cd/m^2$]. And, Turn-on voltage of green OLED applied ZnO was 14 [V] and luminance was 6,332 [$cd/m^2$].

Improvement in Characteristics of Thin Film Transistors by High Pressure Steam Annealing

  • Nagasawa, Y.;Yamamoto, N.;Chishina, H.;Ogawa, H.;Kawasaki, Y.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.333-336
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    • 2006
  • High Pressure Annealing System was developed to improve the characteristics of low-temperature poly-silicon thin film transistors.. (TFTs). The high-pressure steam annealing was applied to the poly-silicon film made by rapid thermal annealing method. The carrier lifetime was investigated by Microwave detection of the Photo-Conductive Decay and the increase of carrier lifetime which indicates the reduction of the defect was observed by high-pressure steam annealing of 1MPa 600C 1hour.

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Characterization of Low-temperature Conductive Films Bonded PV Modules and Its Field Test (저온 전도성 필름으로 본딩된 태양광 모듈의 특성 평가 및 실증 연구)

  • Baek, Su-Wung;Choi, Kwang-Il;Lee, Suk-Ho;Cheon, Chan-Hyuk;Hong, Seung-Min;Lee, Kil-Song;Shin, Hyun-Woo;Yang, Yeon-Won;Lim, Cheol-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.3
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    • pp.189-194
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    • 2014
  • In this paper, PV modules using a low-temperature conductive film(LT-CF) as a bonding material between a cell and a solder free ribbon were produced and chracterized, which is more environmental-friendly, cost effective and high efficient. Mainly, filed electrical performance of PV modules using three different types of bonding material; a convetional solder ribbon(SR), a LT-CF and a light-capturing Ribbon(LCR) were compared to comfirm the feasibility of LT-CF as a bonding material. The filed test were conducted for 3 months and results were discussed in terms of amount of output energy production and efficiency.

A study on the formation of ITO by reactive DC cylindrical sputtering (DC 원통형 반응성 스파트링을 이용한 ITO 형성에 관한 연구)

  • 조정수;박정후;하홍주;곽병구;이우근
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.05a
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    • pp.35-38
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    • 1995
  • Indium Tin Oxide(ITO) thin film is transparent to visible ray and conductive in electricity. It is seen that the samples made by the sputtering process have high transmission rate to visible ray and high adhesion , but the planar type magnetron sputtering process with is very well known in industrial region have a defect of partial erosion on the surface of target and a high loss of target and also since the substrate is positioned in plasma, the damage on thin film surface is caused by the reaction with plasma. In cylindrical magnetron sputtering system. it is known that the loss of target is little , the damage of thin film is very little and the adhesion of thin film with substrate is strong. In this study, we have made ITO thin film in the cylindrical DC magnetron system with the variable of substrate temperature , magnetic field, vacuum condution and the applied voltage. The general temperature for formation on ITO is asked at 350 $^{\circ}C$~400$^{\circ}C$ but we have made ITO is low temperature(80-150$^{\circ}C$) By studing electrical and optical properties of ITO thin fims made by varing several condition, we have searched the optimal condition for formation in the best ITO in low temperature.

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