The Transactions of the Korean Institute of Electrical Engineers P (전기학회논문지P)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Study on Characteristics of Green Organic Light Emitting Device with Transparency Conductive Oxide Electrodes

투명전도성 산화물 전극에 따른 Green OLED의 특성연구

  • Published : 2009.12.01
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Abstract

In order to apply for transparent conductive oxide(TCO), we deposited ZnO thin film on the glass at room temperature by RF magnetron sputtering method. Deposition conditions for low resistivity were optimized in our previous studies. Under the deposition condition with the RF power of 800 [W]. Sheet resistance and surface roughness of ITO and ZnO thin film were measured by Hall-effect measurement system and AFM, respectively. The sheet resistance of ITO and ZnO thin film were 7.290 [$\Omega$] and 4.882 [$\Omega$], respectively. and surface roughness were 3.634 [nm] and 0.491 [nm], respectively. Green OLED was fabricated with the structure of TPD(400 [$\AA$])/Alq3(600 [$\AA$])/LiF(5 [$\AA$])/Al(1200 [$\AA$]). Turn-on voltage of green OLED applied ITO was 7 [V] and luminance was 7,371 [$cd/m^2$]. And, Turn-on voltage of green OLED applied ZnO was 14 [V] and luminance was 6,332 [$cd/m^2$].

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References

  1. H. Jeon, V. P. Verma, K. Noh, D. -H. Kim, W.Choi, and M. Jeon, "Fabrication and Characteristics of Zinc Oxide- and Gallium doped Zinc Oxide thin film transistor using Radio Frequency Magnetron sputtering at Room Temperature" J. Kor. Vac. Soc., Vol. 16, pp.359-365, 2007 https://doi.org/10.5757/JKVS.2007.16.5.359
  2. S.H. Jeong, S.B. Lee and J. H. Boo, "The Insert of Zinc Oxide thin film in Indum tin oxide anode for organic electroluminescence devices", Current Applied Physics, Vol.4, pp.655-658, 2004 https://doi.org/10.1016/j.cap.2003.11.065
  3. X. Jiang, F. L. Wong, M. K. Fung, S. T. Lee, "Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices", Appl. Phys. Lett. Vol. 83, pp.1875-1877, 2003 https://doi.org/10.1063/1.1605805
  4. J. Lim, K. Shin and C. Lee, "ECR Plasma Pretreatment on Sapphire and Silicon Substrates for ZnO ALE", Kor. J. Mater. Res., Vol.14, pp.363-367, 2004 https://doi.org/10.3740/MRSK.2004.14.5.363
  5. J. F. Chang, H. L. Wang, M. H. Hon, "X-ray photoelectron spectroscopy investigation of substrate surface pretreatments for diamond nucleation by microwave plasma chemical vapor deposition", J. Crystal Growth, Vol.211, pp.211-215, 2000 https://doi.org/10.1016/S0022-0248(99)00769-1
  6. H. Kim and J. Kim, "Heat treatment effects on the electrical properties of In2O3-ZnO films prepared by rf-magnetron sputtering metho." J. Kor. Vac. Soc., Vol. 14, pp.238-244, 2005
  7. H. Y. Yu, X. D. Feng, D. Grozea, Z. H. Lu, R. N. S. Sodhi, A-M. Hor, H. Aziz, "Surface electronic structure of plasma-treated indium tin oxides", J. Appl. Phys., 78, p2595, 2001
  8. C. C. Wu, C. I. Wu, J. C. Sturm, A. Kahn, "Surface modification of indium tin oxide by plasma treatment", Appl. phys., 70, p1348, 1997 https://doi.org/10.1063/1.118575
  9. hydrogen and electricity from water and light. International Journal of Hydrogen Energy, pp.557–561, 1984 https://doi.org/10.1016/0360-3199(84)90234-9