• Corrosion Science and Technology
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• v.22 no.4
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• pp.257-264
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• 2023

Ti-6Al-4V alloys are mainly used as dental materials due to their excellent biocompatibility, corrosion resistance, and chemical stability. However, they have a low bioactivity with bioinertness in the body. Therefore, they could not directly bond with human bone. To improve their applications, their bone bonding ability and bone formation capacity should be improved. Thus, the objective of this study was to improve the bioinert surface of titanium alloy substrate to show bioactive characteristics by performing surface modification using wollastonite powder. Commercial bioactive wollastonite powder was successfully deposited onto Ti-6Al-4V alloy using a room temperature spray process. It was found that wollastonite-coated layer showed homogeneous microstructure and uniform thickness. Corrosion resistance of Ti-6Al-4V alloy was also improved by plasma electrolytic oxidation treatment. Its wettability and bioactivity were also greatly increased by wollastonite coating. Results of this study indicate that both plasma electrolytic oxidation treatment and wollastonite coating by room temperature spray process could be used to improve surface bioactivity of Ti-6Al-4V alloy substrate.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.63-68
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• 2013

We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.

• Journal of Sensor Science and Technology
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• v.12 no.5
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• pp.199-204
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• 2003

This paper describes on the fabrication and characteristics of a ceramic thin-film pressure sensor based on Ta-N strain-gauges for harsh environment applications. The Ta-N thin-film strain-gauges are sputter-deposited onto a micromachined Si diaphragms with buried cavity for overpressure protectors. The proposed device takes advantages of the good mechanical properties of single-crystalline Si as diaphragms fabricated by SDB and electrochemical etch-stop technology, and in order to extend the operating temperature range, it incorporates relatively the high resistance, stability and gauge factor of Ta-N thin-films. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is $1.097-1.21\;mV/V{\codt}kgf/cm^2$ in the temperature range of $25-200^{\circ}C$ and the maximum non-linearity is 0.43%FS.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.73-79
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• 2022

In this study, a reaction study between Ga, which has recently been spotlighted as a low-temperature bonding material, and Cu, a representative electrode material, was conducted to investigate information necessary for low-temperature soldering applications. Interfacial reaction and intermetallic compound (IMC) growth were observed and analyzed by reacting Ga and Cu/Au substrates in the temperature range of 80-200℃. The main IMC growing at the reaction interface was CuGa₂ phase, and AuGa₂ IMC with small particle sizes was formed on the upper part and Cu₉Ga₄ IMC with a thin band shape on the lower part of the CuGa₂ layer. CuGa₂ particles showed a scallop shape, and the particle size increased without significant shape change as the reaction time increased, similar to the case of Cu₆Sn₅ growth. As a result of analyzing the CuGa₂ growth mechanism, the time exponent was calculated to be ~3.0 in the temperature range of 120-200℃, and the activation energy was measured to be 17.7 kJ/mol.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.12
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• pp.7283-7286
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• 2014

SiOC films were prepared as insulators for displays by sputtering at low temperatures, and the relationship with the electrical properties waaas examined. The electrical properties of SiOC films were affected by the annealing process, and SiOC films annealed at 100oC showed a significant increase in thickness and a decrease in the reflective index. XRD revealed an increase in the degree of the amorphous structure. Moreover, the capacitance and leakage current of the SiOC films annealed at 100oC decreased. These characteristics of SiOC films highlight their potential as ideal insulators. Amorphous SiOC films by the reduction of polarization are dependent on the elongation effect of the bonding lengths in the structure and the thickness. The properties of these SiOC films are suitable for low temperature displays.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.73-73
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• 2009

In this sutdy, a new class ACA(Anisotropic Conductive Adhesive) with low-melting-point alloy(LMPA) and self-organized interconnection method were developed. This developed self-organized interconnection method are achieved by the flow, melting, coalescence and wetting characteristics of the LMPA fillers in ACA. In order to observe self-interconnection characteristic, the QFP($14{\times}14{\times}2.7mm$ size and 1mm lead pitch) was used. Thermal characteristic of the ACA and temperature-dependant viscosity characteristics of the polymer were observed by differential scanning calorimetry(DSC) and torsional parallel rheometer, respectively. A electrical and mechanical characteristics of QFP bonding were measured using multimeter and pull tester, respectively. Wetting and coalescence characteristics of LMPA filler particles and morphology of conduction path were observed by microfocus X-ray inspection systems and cross-sectional optical microscope. As a result, the developed self-organized interconnection method has a good electrical characteristic($2.41m{\Omega}$) and bonding strength(17.19N) by metallurgical interconnection of molten solder particles in ACA.

• Elastomers and Composites
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• v.43 no.4
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• pp.259-263
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• 2008

An effect of low-temperature long-term thermal degradation on a degree of crystallinity of a low density polyethylene (LDPE) was investigated by using $^1H$ solid state nuclear magnetic resonance (SSNMR). Firstly, the long-term thermal treatment makes a color of LDPE from white to pale yellow which is indicative of thermal oxidation. Secondly, it makes the $^{1}H$ NMR spin-spin and spin-lattice relaxation times ($T_1$) to be long. Lastly, the degree of crystallinity of the semicrystalline aged-LDPE also decreases with thermal treatment. Above all, the $T_1$ increase is envisaged to be due to either a decrease of the amorphous regions governing overall spin-lattice relaxation mechanism in LDPEs or a dynamically restricted motion of specific molecular motions by intermolecular hydrogen bonding or crosslinking. However, since the decrease of crystallinity implies an increase of amorphous regions by the thermal treatment, the former case is contrast to our results. Accordingly, we concluded that the latter effect is responsible for the $T_1$ increase.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.91-96
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• 2005

The silicon-on-insulator (SOI) wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by SRIM simulation that 65keV proton implantation is required for a SOI wafer (200nm SOI, 400nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the $6\~9\times10^{16}\;H^+/cm^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. Direct wafer bonding is performed by joining two wafers together after creating hydrophilic surfaces by a modified RCA cleaning, and IR inspection is followed to ensure a void free bonding. The wafer splitting was accomplished by annealing at the predetermined optimum condition, and high temperature annealing was then performed at $1,100^{\circ}C$ for 60 minutes to stabilize the bonding interface. TEM observation revealed no detectable defect at the SOI structure, and the interface trap charge density at the upper interface of the BOX was measured to be low enough to keep 'thermal' quality.

• Journal of Energy Engineering
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• v.7 no.2
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• pp.163-171
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• 1998

Degradation of polymer additives is enhanced at higher temperature of the test solutions. The degradation of Co-polymer solution was investigated experimentally in a closed loop at the temperature of 6$0^{\circ}C$ and 8$0^{\circ}C$ with various polymer concentrations of 100, 200, 400, 600 ppm in order to see the effect of temperature and polymer concentration with time. The degradation effect were found to be more dependent on temperature than mechanical shear. The friction factor versus Reynolds number curves show that in the range of Reynolds number number 50,000~150,000 the friction was decreased as Reynolds number increased and the friction of solution at low temperature approached to Virk's maximum drag reduction asymptote. For constant flowrates and temperatures the degradation effect was found to be less likely in higher polymer concentration. For constant flowrates and polymer concentrations the degradation rates are affected mainly by temperature. At the temperature of 8$0^{\circ}C$ and polymer concentration of 100 ppm, drag reduction effect was disappeared after 4 hours. However, this thermal degradation could be avoided with additional materials such as surfactants which are supposed to enhance the bonding forces between polymer molecules.

• Korean Journal of Materials Research
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• v.6 no.5
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• pp.532-539
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• 1996

동과 동을 저온에서 단시간내에 접합시키는 가능성을 검토하기 위해서 직류 자기 스퍼터링을 이용한 코팅한 주석 및 주석-잡 합금층을 중간층으로 사용하였다. 접합은 대기중 200-35$0^{\circ}C$의 온도에서 수행되었고 접합온도에 도달직후 바로 냉각하였다. 접합 계면에는 액상의 주석과 고상의 동간의 반응에 의해 n-상(Cu6Sn5) 및 $\varepsilon$-상(Cu3Sn)으로 구성된 금속간화함물 층이 형성되었다. 전단강도로 측정된 접합강도는 접합온도에 따라 비례적으로 증가하지만 30$0^{\circ}C$ 이상에서 감소하였다. 접합강도는 2.8-6.2MPa 범위로 나타났으며, 중간층합금 성분에 따른 접합계면에서의 금속간화합물의 생성거동과 관련지어 설명되었다. 실험결과 실용적인 접합법으로서 저온 단시간 접합의 가능성이 확인되었다.