• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.3
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• pp.485-491
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• 2003

In this paper, We designed the multi-stage amplifier having high gain/low noise characteristics for terrestial repeater of direct digital satellite broadcasting system. In the design the amplifier, we optimized the parameters to have the stable operation between gain, noise figure and stability. The first stage of amplifier can be specified low noise impedance matching, 2nd stage to 5th stage show constant gain and stable operation and final stage of amplifier shows high gain impedance matching. As a result of experiment at the frequency of digital satellite terrestial, show 68dB gain under 2,4dB noise figure and 63dB dynamic range in the 11.7GHz-12.7GHz frequency range, it is a good agreement of communication channel amplifier requirements for satellite terrestial repeater.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.842-844
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• 2012

This paper introduces a 5GHz FIR filter low noise amplifier (LNA) based on a distributed amplifier and analyzes the its characteristics. The proposed FIR filter-LNA has the MA(moving average) filter characteristic which improves the frequency selectivity of the amplifier. Proto-type circuits with FR4 and ${\varepsilon}_r=10.2$ PCB have been realized and simulated using ADS (Advanced Design System). The simulation results verified that the designed LNA had a gain of about 10dB and the frequency characteristic of the MA FIR filter. It is expected that the proposed FIR filter LNA can be applicable to the various applications using an amplifier and a filter in RF systems.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.31B no.10
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• pp.73-81
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• 1994

It is AGC(Automatic Gain Control) amplifier to decide characteristics of IF(Intermediate Frequency) processing IC. When demodulated IF signal by PLL type demodulator, the amplitude of input singla should be maintained at a certain amplitude. The AGC amplifier is an important factor to achieve this condition. The AGC amplifier needs the wide dynamic range, the wide AGC range and better noise characteristics. We designed the AGC amplifier to satisfy these characteristics.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.11
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• pp.89-94
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• 2011

In this paper, we developed the W-band MMIC low noise amplifier for the millimeter-wave seeker using the tuner system. The MHEMT devices for MMIC LNA exhibited DC characteristics with a drain current density of 692mA/mm, an extrinsic transconductance of 726mS/mm. The current gain cutoff frequency(fT) and maximum oscillation frequency($f_{max}$) were 195GHz and 305GHz, respectively. The fabricated W-band low noise amplifier represented S21 gain of 7.42dB at 94 GHz and noise figure of 2.8dB at 94.2 GHz.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1599-1600
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• 2006

In this paper, a small size, $7{\times}6\;mm^2$, Low Noise Amplifier(LNA) using LTCC process was fabricated with multi-layer structure for 2.4GHz wireless LAN. The measured results demonstrate that the bandwidth is 130 MHz, and the operating frequency is from 2.39GHz to 2.52GHz. The power gain is above 7.3 dB in the operating frequency range and the gain flatness is 0.5 dB. The maximum S11 is -4 dB and the maximum S22 is -7.5 dB. The noise figure is less than 1.83 dB. The measured power gain, S11 and S22 were had poorer performance than the simulation results. The reason for this discrepancy is that the input and output matching was not performed exactly. However, the noise figure of the LTCC low noise amplifier is better than simulation result. It is found that it is possible to fabricate a LTCC low noise amplifier in a small size.

• Journal of Biomedical Engineering Research
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• v.20 no.2
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• pp.205-212
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• 1999

When we want to observe and record a patient's EEG in an operating room, the operation of electrosurgical unit(ESU) causes undesirable artifacts with high frequency and high voltage. These artifacts make the amplifiers of the conventional EEG system saturated and prevent the system from measuring the EEG signal. This paper describes a high-performance bipolar EEG amplifier for a CSA (compressed spectral array ) system with reduced ESU artifacts. The designed EEG amplifier uses a balanced filter to reduce the ESU artifacts, and isolates the power supply and the signal source of the preamplifier from the ground to cut off the current from the ESU to the amplifier ground. To cancel the common mode noise in high frequency, a high CMRR(common mode rejection ratio) diffferential amplifier is used. Since the developed bipolar EEG amplifier shows high gain, low noise, high CMRR, high input impedance, and low thermal drift, it is possible to observe and record more clean EEG signals in spite of ESU operation. Therefore the amplifier may be applicable to a high-fidelity CSA system.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.4
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• pp.426-432
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• 2012

A fully-integrated low power K-band radar transceiver in 130 nm CMOS process is presented. It consists of a low-noise amplifier (LNA), a down-conversion mixer, a power amplifier (PA), and a frequency synthesizer with injection locked buffer for driving mixer and PA. The receiver front-end provides a conversion gain of 19 dB. The LNA achieves a power gain of 15 dB and noise figure of 5.4 dB, and the PA has an output power of 9 dBm. The phase noise of VCO is -90 dBc/Hz at 1-MHz offset. The total dc power dissipation of the transceiver is 142 mW and the size of the chip is only $1.2{\times}1.4mm^2$.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.136-140
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• 1990

A hybrid wideband amplifier having bandwidth from 5MHz to 2000MHz with a gain of 10db$\pm$3dB is designed and implemented by using a lossy matched network and GaAs FET. The implemented amplifier circuit operates as a capacitor-resistor(C-R) coupled amplifier circuit in the low frequency range (below 800 MHz) in which {{{{ LEFT $\mid$ S_{21 } RIGHT $\mid$ }} for the GaAs FET is constant. It also operates as a lossless impedance matching circuit in the microwave frequency range in which S21 for the GaAs FET has a slope of approximately -6dB/octave. Using this configuration technique, Two stage GaAs FET amplifier implemented is measured to 10dB gain within a 3dB fluctuation over the frequency band from 5 to 2000MHz.

• Journal of Industrial Technology
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• v.11
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• pp.43-53
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• 1991

Two kinds of simple active oscillators are proposed and analyzed assuming that operational amplifier has two-poles frequency characteristics. The first circuit is composed of one operational amplifier, one resistor and one grounded capacitor. The second oscillator is realized with one operational amplifier and three resitors. Proposed oscillators have the low sensitivity of the oscillation frequency for little variations of the passive element values. By the experimental results obtained with Op-Amp. ${\mu}A741$, the simple oscillators can be useful for the frequency range $1.25 KHz{\leq}f_{01}{\leq}40KHz$ for the active-RC type or $45.45 KHz{\leq}f_{02}{\leq}400KHz$ for the active-R oscillator, and it is shown to transform the active-R oscillator circuit into the voltage controlled type. Therefore, two kinds of oscillator circuit are attractive for the IC realization, because they have one operational amplifier, one resistor and one grounded capacitor, or three resistors.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.5
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• pp.33-40
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• 1998

In this paper, a design of current-mode continuous-time filters for low voltage and low frequency applications using complementary bipolar current mirrors is presented. The proposed current-mode filters consist of simple bipolar current mirrors and capacitors and are quite suitable for monolithic integration. Since the design method of the proposed current-mode filters are based on the integrator type of realization, it can be used for a wide range of applications. Since the input impedance of simple bipolar current mirror is small, in this paper, negative feedback amplifier is used to realize is designed by cascade method. The cutoff frequency of the designed filter can be easily tunable by the DC controlling current from 60kHz to 120kHz. The characteristics of the designed current-mode filters are simulated and examined by SPICE using standard bipolar transistor parameters.