• Electrical & Electronic Materials
• /
• v.9 no.9
• /
• pp.925-932
• /
• 1996

Using the d.c. 2-probe method, we have examined the temperature dependence of CO gas sensitivity of pure ZnO and ZnO CuO thick films prepared by the acqueous precipitation. At 200ppm CO gas, pure ZnO thick film shows the maximum sensitivity of -6.5 at 300.deg. C. On the other hand, the maximum sensitivity of 1-5 mol% and 10-15 mol% CuO added ZnO thick films are 2.8-2.5 and 1.6, respectively. Therefore, the sensitivity of pure ZnO thick film is about three times larger than those of ZnO-CuO thick films. We suggest that the promotion of maximum sensitivity is caused by low packing and the increase of chemical adsorptions for $O_{2}$ gas.

• Electrical & Electronic Materials
• /
• v.9 no.10
• /
• pp.1008-1012
• /
• 1996

I-V, C-V characteristics of inverted staggered type hydrogenerated amorphous silicon thin film transistor(a-Si:H TFT) was studied and experimentally verified. The results show that the log-log plot of drain current increased by voltage increase. The saturated drain current of DC output characteristics increased at a fixed gate voltage. According to the increase of gate voltage, activation energy of electron and the increasing width of Id at high voltage were decreased. Id saturation current saturated at high Vd over 4.5V, Vg-ld hysteresis characteristic curves occurred between -15V and 15V of Vg. Hysteresis current decreased at low voltage of -15V and increased at high voltage of 15V.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2003.09a
• /
• pp.93-100
• /
• 2003

The continuing scaling trend in microelectronic circuit technology has a significant impact on the different IC interconnection and packaging technologies. These latter technologies have not kept pace with the IC scaling trends, resulting in a so-called“interconnect technology gap”. Multilayer thin film technology is proposed as a“bridge”- technology between the very high density IC technology and the coarse standard PCB technology. It is also a key enabling technology for the realisation of true“System-in-a-Package”(SIP) solutions, combining multiple“System-on-a-Chip”(SOC) IC's with other components and also integrating passive components in its layers. A further step is to use this technology to realise new functionalities on top of active wafers. These additional“above-IC”processed layers may e.g. be used for low loss, high speed on chip interconnects, clock distribution circuits, efficient power/ground distribution and to realize high Q inductors on chip.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 2004.11a
• /
• pp.201-208
• /
• 2004

In this study a general Galerkin FE lubrication analysis method was utilized to analyze the complex lubrication performance of a spiral groove seal having an additional inner circular groove, which was designed for a chemical process mixer operating at a low speed of the maximum 500 rpm. Equilibrium seal clearance analyses under varying outer pressure revealed that the seal maintains a certain levitation seal clearance under the outer pressure of more than about 1.5 bar, regardless of a rotating speed. Also, under the normal outer pressure of 11 bar, the axial stiffness of the seal was predicted to have a high value of more than 7.0e+07 N/m, regardless of a rotating speed and thereby, the seal is expected to maintain a stable thickness of lubrication film under a certain external excitation acting.

• Electrical & Electronic Materials
• /
• v.10 no.9
• /
• pp.869-875
• /
• 1997

Bi based superconducting thin films were fabricated by 4-target RF magnetron sputtering using the method of controlling the on-off time. These thin films showed better crystal structures. The ratio of Cu/Bi decreased but the critical temperature increased with increasing the temperature of the substrate. High temperature phase low temperature of the substrate. High temperature phase low temperature phase and semiconducting phase can be formed by controlling the on-off time of the shutter respectively.

• Electrical & Electronic Materials
• /
• v.9 no.7
• /
• pp.727-732
• /
• 1996

In the present paper, the Cu films 4.mu.m thick were deposited by RF magnetron sputtering method on Si wafer. The Cu films deposited at a condition of 100W, 10mtorr exhibited a low electrical resistivity of 2.3.mu..ohm..cm and densed microstructure, poor adhesion. The Cu films grown by 200W, 20mtorr showed a good adhesion property and higher electrical resistivity of 7.mu..ohm..cm because of porous columnar microstructure. Therefore, The Cu films were deposited by double layer deposition method using RF magnetron sputtering on Si wafer. The dependence of the electrical resistivity, adhesion, and reflectance in the CU films [C $U_{4-d}$(low resistivity) / C $U_{d}$(high adhesion) / Si-wafer] on the thickness of d has been investigated. The films formed with this deposition methods had the low electrical resistivity of about 2.6.mu..ohm..cm and high adhesion of about 700g/cm.m.m.

• Proceedings of the KIEE Conference
• /
• 1999.07d
• /
• pp.1514-1516
• /
• 1999

This paper covers our efforts to improve the low carrier mobility and light instability of hydrogenated amorphous silicon (a-Si:H) films with microcrystalline silicon $({\mu}c-Si)$ films. We successfully prepared ${\mu}c-Si$ films on $CaF_2$/glass substrate by decomposition of $SiH_4$ in RPCVD system. The $CaF_2$ films on glass served as a seed layer for ${\mu}c-Si$ film growth. The XRD analysis on $CaF_2$/glass illustrated a (111) preferred $CaF_2$ grains with the lattice mismatch less than 5 % of Si. We achieved ${\mu}c-Si$ films with a crystalline volume fraction of 61 %, (111) and (220) crystal orientations. grain size of $706\AA$, activation energy of 0.49 eV, and Photo/dark conductivity ratio of 124. By using a $CaF_2$/glass structure. we were able to achieve an improved ${\mu}c-Si$ films at a low substrate temperature of $300^{\circ}C$.

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.4
• /
• pp.189-192
• /
• 2014

Yttria-stablized zirconia (YSZ) is the most commonly used electrolyte material, but the reduction in working temperature leads to insufficient ionic conductivity. Ceria based electrolytes (GDC) are more attractive in terms of conductivity at low temperature, but these materials are well known to be reducible at very low oxygen partial pressure. The reduction of electrolyte resistivity is necessary to overcome cell performance losses. So, thin YSZ/GDC bilayer technology seems suitable for decreasing the electrolyte resistance at lower operating temperatures. Bilayer electrolytes composed of a galdolinium-doped $CeO_2$ ($Ce_{0.9}Gd_{0.1}O_{1.95}$, GDC) layer and yttria-stabilized $ZrO_2$ (YSZ) layer with various thicknesses were deposited by RF sputtering and E-beam evaporation. The bilayer electrolytes were deposited between porous Ni-GDC anode and LSM cathode for anode-supported single cells. Thin film structure and surface morphology were investigated by X-ray diffraction (XRD), using $CuK{\alpha}$-radiation in the range of 2ce morphol$^{\circ}C$. The XRD patterns exhibit a well-formed cubic fluorite structure, and sharp lines of XRD peaks can be observed, which indicate a single solid solution. The morphology and size of the prepared particles were investigated by field-emission scanning electron microscopy (FE-SEM). The performance of the cells was evaluated over $500{\sim}800^{\circ}C$, using humidified hydrogen as fuel, and air as oxidant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.1034-1037
• /
• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$. The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ ($<200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC varies with $T_f$.

• Electrical & Electronic Materials
• /
• v.8 no.2
• /
• pp.176-183
• /
• 1995

The present work is concerned with the switching conduction characteristics of PI LB films in metal insulator metal sandwiches. By applying various DC voltage bias to MIM junctions, conduction characteristics of junctions can be changed between the high-voltage low-current(off) condition, the low-voltage high-current (on) condition and the medium(mid) condition. Switching conduction characteristics can be also observed in MIM junctions employing some aromatic compounds as insulators. Switching conduction characteristics is assumed to be owing to the existence of aromatic rings, space charge in films, impurities on metal-insulator interface, and difference in work functions of base and top electrodes metal. To study the conduction process of on, off, and mid conductions, we measured I-V, d$^{2}$V/d I$^{2}$-V characteristics of junctions with several different top electrodes under various temperatures. Small conductance changes of junctions can be measured by observing the second derivative, d$^{2}$V/dI$^{2}$, of I-V curve. A dynamical technique is used to get the second derivatives. That is, a finite modulation of the current is applied to the junctions and the second harmonic of the voltage is detected.