• 제목/요약/키워드: Low-crystal field

검색결과 177건 처리시간 0.022초

Computer Interface를 이용한 핵 사중극 공명 Gaussmeter의 제작 (Construction of the NQR Gaussmeter using Computer Interface)

  • 김혜진;신종필;조성호;김창석
    • 한국자기학회지
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    • 제5권2호
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    • pp.99-102
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    • 1995
  • 전기장 기울기 텐서가 축대칭인 결정에 대칭인 방향으로 자기장을 가하면 핵사중극공명에 미치는 Zeeman 효과에 의하여 두 개의 분리된 공명진동수가 측정된다. 이 때 가해준 자기장과 두 공명진동수 간의 차이는 서로 비례하며, ${(CH_{2})}_{6}N_{4}$ 단결정의 $^{14}N$ 원자핵에 대한 비례상수는 0.16 mT/kHz 이다. 핵 사중극 공명장치 와 개인용 컴퓨터를 interface 하여 핵 사중극 공명신호의 모습을 모니터에 표시하여 측정되는 두 공명신호의 진동수 차이로 자기장을 직접 읽을 수 있도록 하였다. 여기로부터 핵 사중극 공명 Gaussmeter를 이용하여 실험적으로 측정한 최저 자기장은 0.20 mT 였다.

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유전율 이방성이 음인 액정을 이용한 fringe-field driven Twisted Nematic 모드의 전기광학 특성 (Electrode-Optic Characteristics of Fringe-field driven Twisted Nematic Mode using a Liquid Crystal with Negative Dielectric Anisotropy)

  • 송일섭;신성식;송성훈;김향율;이종문;이승희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.1054-1057
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    • 2003
  • We have studied $90^{\circ}$ twisted nematic (TN) mode driven by fringe electric field, where two polarizers are parallel each other such that the cell shows a black state before a voltage is applied. According to the studies by computer simulation for a LC with negative dielectric anisotropy, the LC twists perpendicular to the horizontal field direction of fringe electric field and the degree of tilt angle is very low, when a voltage is applied. Therefore, the new device exhibits wide viewing angle characteristic due to in-plane switching and high transmittance since the LC director aligns parallel to the polarizer axis.

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Thermal treatment effect of $CaF_2$ films for TFT gate insulator applications

  • Kim, Do-Young;Park, Suk-Won;Junsin Yi
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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    • pp.145-148
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    • 1998
  • Fluoride({{{{ { CaF}_{2 } }}}}) films exhibited a cubic structure with similar lattice constant to that of Si and have sufficient breakdown electric field as gate dielectric material. Therefore, {{{{ { CaF}_{2 } }}}} are expected to replace conventional insulator such {{{{ { SiO}_{ 2},{Ta}_{2}{O}_{ 2} and{Al}_{2}{O}_{5}. However, {CaF}_{2}}}}} films showed hystereisis properties due to mobile charges in the film. To solve this problem we performed thermal treatment and achieves field. C-v results indicate a reduced hystereisis window of {{{{ }}}}ΔV =0.2v, LOW INTERFACE STATE {{{{{D}_{it}=2.0 TIMES {10}^{11}{cm}^{-1}{eV}^{-1}}}}} in midgap, and good WIS diode properties. We observed a preferential crystallization of(200) plane from XRD analysis. RTA treatment effects on various material properties of {{{{{CaF}_{2}}}}} are presented in this paper.

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낮은 Rayleigh값의 B nard Convection 유동장에 주입된 기포의 영향에 관한 연구 (The Effect of a Bubble in B nard Convection at Low Rayleigh Number)

  • 엄용균;권기한
    • 대한기계학회논문집B
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    • 제25권12호
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    • pp.1879-1886
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    • 2001
  • n a enclosed square cavity occurred B nard convection, the flow phenomena in the surrounding of the bubble attached at the upper cooled solid wall were studied by using a thermo-sensitive liquid-crystal tracer and image processing techniques. This method offers the advantage of measuring the entire flow field in a selected plane within the fluid at a given instant of time in contrast to point by point method like T/C. Quantitative data of the temperature were obtained by applying a colour-image-processing to the visualized image. As the flowing in a bubble, In a bubble size appears the flow phenomena which the direction of flow is reversed in the entire temperature and flow field. The observed phenomena are described with regard to the thermocapillary convection.

Fringe-Field 구동형 반사형 Hybrid Aligned Nematic 액정 디스플레이의 전기-광학 특성 (Electro-Optic Characteristics of the Fringe-Field driven Reflective Hybrid Aligned Nematic Liquid Crystal Display)

  • 정태봉;박지혁;손정석;이종문;이승희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.972-975
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    • 2003
  • We have performed computer simulation to obtain electro-optic characteristics of reflective hybrid aligned nematic liquid crystal displays driven by fringe field. The results show that the optimal retardation value of the cell is $0.289{\mu}m$, which allows for the cell to have a practical cell gap of larger than $3{\mu}m$ when manufacturing. A reflectance of the dark state is only 0.114% for an incident light 550nm. At this condition, the light efficiency of white state reaches 92.7%. Further, we have studied a new reflective display with polarizer, optical compensation with half plate, LC plus reflector. The display with optimized cell parameters shows low wavelength dispersion and the contrast ratio greater than 5 over exists about $120^{\circ}$ in vertical direction and $160^{\circ}$ in horizontal direction.

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초정밀 절삭가공에서 표면거칠기 특성 평가 (Characteristics Evaluation of Surface Roughness with Ultra Precision Machining)

  • 강순준;이갑조;김종관
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 2003년도 추계학술대회
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    • pp.83-88
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    • 2003
  • In this study, experiments were conducted with an ultra-precision machine, developed In domestic, to find the characteristics and the most suitable cutting conditions of ultra-precision machining. To maximize the performance of the machine, the machine was installed in a room that is protected from vibration and is maintained constant temperature and constant humidity. Selected work pieces are an aluminum-alloyed material, which has excellent corrosion resistance and has low deformation. The used tool is synthetic poly crystal diamond which has excellent abrasion resistance and has low affinity. Four types of tool nose radius were used such as 0, 0.1, 0.2 and 0.4mm. Machining is performed with cutting speed of 500, 800 and 1000m/min., feed rate of 0.005, 0.008, 0.010mm/rev. and cutting depth of 0.0005, 0.0025 and 0.005mm respectively which can generally be used in the field as a cutting condition. As a method of evaluation surface roughness was measured for each cutting condition and reciprocal characteristics are computed for each tool nose radius, cutting speed, feed rate and cutting depth. As a result the most suitable cutting condition and characteristics of ultra-precision machining were identified which can usefully be applied in the industrial field.

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초정밀 절삭가공에서 표면 거칠기 특성 평가 (Characteristics Evaluation of Surface Roughness with Ultra Precision Machining)

  • 강순준;김종관
    • 한국공작기계학회논문집
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    • 제13권1호
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    • pp.9-15
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    • 2004
  • In this study, experiments were conducted with an ultra-precision machine, developed in domestic, to find the characteristics and the most suitable cutting conditions of ultra-precision machining. To maximize the performance of the machine, the machine was installed in a room that is protected from vibration and is maintained constant temperature and constant humidity. Selected work pieces are an aluminum-alloyed material, which has excellent corrosion resistance and has low deformation. The used tool is synthetic poly crystal diamond, which has excellent abrasion resistance and has low affinity. Four types of tool nose radius were used such as 0, 0.1, 0.2 and 0.4mm. Machining is performed with cutting speed of 500, 800 and 1000m/min., feed rate of 0.005, 0.008, 0.010mm/rev. and cutting depth of 0.0005, 0.0025 and 0.005mm respectively which can generally be used in the field as a cutting condition. As a method of evaluation, surface roughness was measured for each cutting condition, and reciprocal characteristics are computed for each tool nose radius, cutting speed, feed rate and cutting depth. As a result, the most suitable cutting condition and characteristics of ultra-precision machining were identified which can usefully be applied in the industrial field.

Ti/SiC(4H) 쇼트키 장벽 다이오드의 전기적 특성 (The electrical properties of a Ti/SiC(4H) sehottky diode)

  • 박국상;김정윤;이기암;장성주
    • 한국결정성장학회지
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    • 제7권3호
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    • pp.487-493
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    • 1997
  • SiC(4H) 결정에 Ti을 열증착하여 Ti/SiC(4H) 쇼트키(Schottky) 장벽 다이오드를 만들었다. SiC(4H)의 주개농도(donor concentration)는 전기용량-전압(C-V) 측정으로부터 $2.0{\times}10^{15}{\textrm}{cm}^{-3}$이었으며, 내부전위(built-in potential)는 0.65 V이었다. 전류-전압(I-V) 특성으로 부터 다이오드의 이상계수(ideally factor)는 1.07이었으며, 역방향 항복전장(breakdown field)은 약 $1.7{\times}10^3V/{\textrm}{cm}$이었다. 상온에서 $140^{\circ}C$까지 온도변화에 따라 측정된 포화전류로 부터 구한 전위장벽(potential barrier)은 0.91 V이었는데, 이는 C-V 특성으로 부터 구한 전위장벽과 거의 같았다.

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High performance of ZnO thin film transistors using $SiN_x$ and organic PVP gate dielectrics

  • Kim, Young-Woong;Park, In-Sung;Kim, Young-Bae;Choi, Duck-Kyun
    • 한국결정성장학회지
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    • 제17권5호
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    • pp.187-191
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    • 2007
  • The device performance of ZnO-thin film transistors(ZnO-TFTs) with gate dielectrics of $SiO_2,\;SiN_x$ and Polyvinylphenol(PVP) having a bottom gate configuration were investigated. ZnO-TFTs can induce high device performance with low intrinsic carrier concentration of ZnO only by controlling gas flow rates without additional doping or annealing processes. The field effect mobility and on/off ratio of ZnO-TFTs with $SiN_x$ were $20.2cm^2V^{-1}s^{-1}\;and\;5{\times}10^6$ respectively which is higher than those previously reported. The device adoptable values of the mobility of $1.37cm^2V^{-1}s^{-1}$ and the on/off ratio of $6{\times}10^3$ were evaluated from the device with organic PVP dielectric.

Measurement of Velocity and Temperature Field at the Low Prand시 Number Melt Model of the CZ Crystal Growth

  • Kim, Min-Cheol;Lee, Sang-Ho;Yi, Kyung-Woo
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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    • pp.169-172
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    • 1998
  • A phyaical model of the Czochralski method for silicon single crystals is designed to measure the change of velocities and temperature profilles in the melt. Wood's metal(Bi 50%, Pb 26.7%, Sn 13.3%, Cd 10%, m.p. 70℃) is used to simulate the silicon melt in the crucible. To measure the local velocity change, electromagnetic probe is adopted as a velocity sensor. The output voltage of the sensor shows linear relationship to the velocity of the melt.

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