• 제목/요약/키워드: Low-Power Device

검색결과 1,293건 처리시간 0.028초

광대역 과도전압 차단장치의 설계 및 제작 (Design and Fabrication of Wide-band Transient Voltage Blocking Device)

  • 송재용;이종혁;길경석
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 1999년도 춘계종합학술대회
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    • pp.330-334
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    • 1999
  • This paper presents a new transient voltage blocking device (TBD) for commucation facilities with low power and high frequency bandwidth. Conventional protection devices have some problems such as low frequency bandwidth, low energy capacity and high remnant voltage. In order to improve these limitations, the new TBD, which consists of a gas tube, avalanche diodes and junction type field effect transistors (JFETs), was designed and fabricated JFETs were used as an active non-linear element and a high speed switching diode with low capacitance limits high current. Therefore the avalanche diodes with low energy capacity are protected from the high current, and the TBD has a very small input capacitance. From the performance test using surge generator, which can produce 1.2/50${\mu}\textrm{s}$ 4.2 k$V_{max}$, 8/20${\mu}\textrm{s}$ 2.1 kA$\sub$max/, it is confirmed that the proposed TBD has an excellent protection performance in tight clamping voltage and limiting current characteristics.

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Ultra-low-power Pulse Oximeter with a 32.768 kHz Real Clock

  • Lee, Wonjun;Han, Youngsun;Kim, Chulwoo;Rieh, Jae-sung;Park, Jongsun;Park, Jae Young;Kim, Seon Wook
    • IEIE Transactions on Smart Processing and Computing
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    • 제6권2호
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    • pp.129-132
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    • 2017
  • A conventional pulse oximeter has high power consumption; thus, its mobility is severely limited. In this paper, we discuss the drawbacks of the existing pulse oximeters and propose a new ultra-low-power pulse oximeter that supports wireless data transmission for remotely monitoring vital signs, such as peripheral capillary oxygen saturation (SpO2) and beats per minute (BPM). We could notably reduce power consumption by using a low-frequency single clock in all well-customized modules. Also, our device is publicly certified, and thus, possibly engaged in clinical trials for commercial use.

저전력 무선 센서 네트워크를 위한 적응적 MAC 프로토콜 (Adaptive Medium Access Control protocol for low-power wireless sensor network)

  • 강정훈;이민구;윤명현;유준재
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 심포지엄 논문집 정보 및 제어부문
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    • pp.209-211
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    • 2005
  • This paper proposes a adaptive medium-access control(MAC) protocol designed for low-power wireless multi-hop sensor networks which is used for connecting physical world and cyber computing space. Wireless multi-hop sensor networks use battery-operated computing and sensing device. We expect sensor networks to be deployed in an ad hoc fashion, with nodes remaining inactive for long time, but becoming suddenly active when specific event is detected. These characteristics of multi-hop sensor networks and applications motivate a MAC that is different from traditional wireless MACs about power conservation scheme, such as IEEE 802.11. Proposed MAC uses a few techniques to reduce energy consumption. Result show that proposed MAC obtains more energy savings.

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$320{\times}256$ 초점면배열 적외선 검출기를 위한 고성능 저 전력 신호취득회로의 제작 (Fabrication of High Performance and Low Power Readout Integrated Circuit for $320{\times}256$ IRFPA)

  • 김치연
    • 한국군사과학기술학회지
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    • 제10권2호
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    • pp.152-159
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    • 2007
  • This paper describes the design, fabrication, and measurement of ROIC(ReadOut Integrated Circuit) for $320{\times}256$ IRFPA(InfraRed Focal Plane Array). A ROIC plays an important role that transfer photocurrent generated in a detector device to thermal image system. Recently, the high performance and low power ROIC adding various functions is being required. According to this requirement, the design of ROIC focuses on 7MHz or more pixel rate, low power dissipation, anti-blooming, multi-channel output mode, image reversal, various windowing, and frame CDS(Correlated Double Sampling). The designed ROIC was fabricated using $0.6{\mu}m$ double-poly triple-metal Si CMOS process. ROIC function factors work normally, and the power dissipation of ROIC is 33mW and 90.5mW at 7.5MHz pixel rate in the 1-channel and 4-channel operation, respectively.

심장박동기용 시그마 델타 A/D 변환기에서의-저전력 데시메이션 필터 구조 (Low-power Decimation Filter Structure for Sigma Delta A/D Converters in Cardiac Applications)

  • 장영범;양세정;유선국
    • 대한전기학회논문지:시스템및제어부문D
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    • 제53권2호
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    • pp.111-117
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    • 2004
  • The low-power design of the A/D converter is indispensable to achieve the compact bio-signal measuring device with long battery duration. In this paper, new decimation filter structure is proposed for the low-power design of the Sigma-Delta A/D converter in the bio-instruments. The proposed filter is based on the non-recursive structure of the CIC (Cascaded Integrator Comb) decimation filter in the Sigma-Delta A/D converter. By combining the CSD (Canonic Signed Digit) structure with common sub-expression sharing technique, the proposed decimation filter structure can significantly reduce the number of adders for implementation. For the fixed decimation factor of 16, the 15% of power consumption saving is achieved in the proposed structure in comparison with that of the conventional polyphase CIC filter.

CoolSiCTM SiC MOSFET Technology, Device and Application

  • Ma, Kwokwai
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2017년도 전력전자학술대회
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    • pp.577-595
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    • 2017
  • ${\bullet}$ Silicon Carbide (SiC) had excellent material properties as the base material for next generation of power semiconductor. In developing SiC MOSFET, gate oxide reliability issues had to be first overcome before commercial application. Besides, a high and stable gate-source voltage threshold $V_{GS(th)}$ is also an important parameter for operation robustness. SiC MOSFET with such characteristics can directly use existing high-speed IGBT gate driver IC's. ${\bullet}$ The linear voltage drop characteristics of SiC MOSFET will bring lower conduction loss averaged over full AC cycle compared to similarly rate IGBT. Lower switching loss enable higher switching frequency. Using package with auxiliary source terminal for gate driving will further reduce switching losses. Dynamic characteristics can fully controlled by simple gate resistors. ${\bullet}$ The low switching losses characteristics of SiC MOSFET can substantially reduce power losses in high switching frequency operation. Significant power loss reduction is also possible even at low switching frequency and low switching speed. in T-type 3-level topology, SiC MOSFET solution enable three times higher switching freqeuncy at same efficiency.

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제주 행원 풍력 발전 시스템의 역률 개선에 관한 연구 (A study on the power factor improvement of Wind Turbine Generation System at Haeng-Won in Jeju)

  • 박성기;김정웅;강경보;김일환
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2003년도 춘계전력전자학술대회 논문집(1)
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    • pp.375-378
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    • 2003
  • This paper presents a study on the power factor improvement of the Wind turbine Generation System(WTGS) at Haeng-won wind farm in Jeju Island. Vestas WTGS named V47 as a model system is selected in this paper, and has 660 kW Power ratings. In this system, power factor correction is controlled by the conventional method with power condenor bank. So, model system at Haeng-won wind farm has very low power factor in the area of low wind speed, which is from 4 m/s to 6 m/s. This is caused by the power factor correction using power condenser bank To improve the power factor in the area of low wind speed, we used the static var compensator(SVC) using current controlled PWM power converter by IGBT switching device. finally, to verify the profosed method, the results of computer simulation using Psim program are presented to support the discussion.

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Fabrication and Characterization of a GaN Light-emitting Diode (LED) with a Centered Island Cathode

  • Park, Yun Soo;Lee, Hwan Gi;Yang, Chung-Mo;Kim, Dong-Seok;Bae, Jin-Hyuk;Cho, Seongjae;Lee, Jung-Hee;Kang, In Man
    • Journal of the Optical Society of Korea
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    • 제16권4호
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    • pp.349-353
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    • 2012
  • Uniform spreading of injection current in light-emitting diodes (LEDs) is one of the crucial requirements for better device performances. It is reported that non-uniform current spreading leads to low output power, high current crowding, heating, and reliability degradation of the LED device. This paper reports on the effects of different surface and electrode geometries in the LEDs. To increase the output power of LEDs and reduce the series resistance, a rectangular-type LED (RT-LED) with a centered island cathode has been fabricated and investigated by comparison with a conventional LED (CV-LED). The performances of RT-LEDs were prominently enhanced via uniform current spreading and low current crowding. Performances in terms of increased output power and lower forward voltage of simulated RT-LEDs are much superior to those of CV-LEDs. Based on these results, we investigated the correlation between device geometries and optical characteristics through the fabricated CV and RT-LEDs. The measured output power and forward voltage of the RT-LEDs at 100 mA are 64.7% higher and 8% smaller compared with those of the CV-LEDs.

ELECTRONIC SAFING OF A DIODE LASER ARM-FIRE DEVICE

  • Kenneth E. Willis;Suk Tae Chang
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 1995년도 제4회 학술강연회논문집
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    • pp.171-175
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    • 1995
  • Semiconductor diode lasers that can generate one watt or more of optical energy for tens of milliseconds (quasi continuous wave) are now readily available. Several researchers have demonstrated that this power level, when properly coupled, can reliably initiate pyrotechnic mixtures. This means that the initiator containing the pyrotechnic can be protected against inadvertent initiation from electromagnetic radiation or electrostatic discharge by a conducting Faraday cage surrounding the explosive. Only a small dielectric window penetrates the housing of the initiator, thereby eliminating the conductors necessitated by a bridgewire electroexplosive device. The diode laser itself, however, functions at a low voltage (typically 3 volts) and hence is susceptible to inadvertent function from power supply short circuits, electrostatic discharge or induced RF energy. The rocket motor arm-fire device de-scribed in this paper uses a diode laser, but protects it from unintentional function with a Radio Frequency Attenuating Coupler (RFAC).The RFAC, invented by ML Aviation, a UK company, transfers power into a Faraday cage via magnetic flux, thereby protecting the diode, its drive circuit and the pyrotechnic from all electromagnetic and electrostatic hazards. The first production application of a diode laser and RFAC device was by the Korean Agency for Defense Development.

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Application Specific IGCTs

  • Carroll Eric;Oedegrad Bjoern;Stiasny Thomas;Rossinelli Marco
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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    • pp.31-35
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    • 2001
  • IGCTs have established themselves as the power semiconductor of choice at medium voltage levels within the last few years because of their low conduction and switching losses. The trade-off between these losses can be adjusted by various lifetime control techniques and the growing demand for these devices is driving the need for standard types to cover such applications as Static Circuit Breakers (low on-state) and Medium Voltage Drives (low switching losses). The additional demands of Traction (low operating temperatures) and Current Source Inverters (symmetric blocking) would normally result in conflicting demands on the semiconductor. This paper will outline how a range of power devices can meet these needs with a limited number of wafers and gate units. Some of the key differences between IGCTs and IGBTs will be explained and the outlook for device improvements will be discussed.

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