• Title/Summary/Keyword: Low-Power Device

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Efficient Maximum Power Tracking of Energy Harvesting Using a ${\mu}$Controller for Power Savings

  • Heo, Se-Wan;Yang, Yil-Suk;Lee, Jae-Woo;Lee, Sang-Kyun;Kim, Jong-Dae
    • ETRI Journal
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    • v.33 no.6
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    • pp.973-976
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    • 2011
  • This letter describes an efficient technique for maximum power point tracking (MPPT) of an energy harvesting device. It is based on controlling the device voltage at the point of maximum power. Using a microcontroller with a power saving technique, the MPPT algorithm maintains the maximum power with low power consumption. An experiment shows that the algorithm maximizes the energy transfer power using an energy management IC fabricated in a 0.18-${\mu}m$ process. Compared to direct energy transfer to a battery, the proposed technique is more efficient for low-energy harvesting under variable conditions.

Resource Allocation and EE-SE Tradeoff for H-CRAN with NOMA-Based D2D Communications

  • Wang, Jingpu;Song, Xin;Dong, Li
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.14 no.4
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    • pp.1837-1860
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    • 2020
  • We propose a general framework for studying resource allocation problem and the tradeoff between spectral efficiency (SE) and energy efficiency (EE) for downlink traffic in power domain-non-orthogonal multiple access (PD-NOMA) and device to device (D2D) based heterogeneous cloud radio access networks (H-CRANs) under imperfect channel state information (CSI). The aim is jointly optimize radio remote head (RRH) selection, spectrum allocation and power control, which is formulated as a multi-objective optimization (MOO) problem that can be solved with weighted Tchebycheff method. We propose a low-complexity algorithm to solve user association, spectrum allocation and power coordination separately. We first compute the CSI for RRHs. Then we study allocating the cell users (CUs) and D2D groups to different subchannels by constructing a bipartite graph and Hungrarian algorithm. To solve the power control and EE-SE tradeoff problems, we decompose the target function into two subproblems. Then, we utilize successive convex program approach to lower the computational complexity. Moreover, we use Lagrangian method and KKT conditions to find the global optimum with low complexity, and get a fast convergence by subgradient method. Numerical simulation results demonstrate that by using PD-NOMA technique and H-CRAN with D2D communications, the system gets good EE-SE tradeoff performance.

Hybrid Type X-Ray Generator Using EDLC for Fluoroscopy X-Ray System (EDLC를 이용한 X선 투시촬영장치용 하이브리드 X선 제너레이터)

  • Seo, Young-Min;Hong, Soon-Chan
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.28 no.9
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    • pp.89-98
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    • 2014
  • A diagnostic fluoroscopy X-ray system uses a 32kW or greater X-ray generator for obtaining real-time moving images and high-resolution images. Fluoroscopy X-ray systems have to use a high-capacity AC power source to perform long-time low-power fluoroscopy and short-time high-power spot exposure. In this paper, we propose a hybrid type X-ray generator for fluoroscopy X-ray system which can perform fluoroscopy and spot exposure with a low-capacity AC power source and an energy storage device. The characteristics of energy storage devices are compared and each energy storage device is modelled to equivalent circuit. And the characteristics of available energy are analyzed as a function of output voltage and power. A 32kW class hybrid X-ray generator with EDLC as an energy storage device for fluoroscopy X-ray system was constructed, and its validity was verified by means of simulations and experiments.

Conductive adhesive with transient liquid-phase sintering technology for high-power device applications

  • Eom, Yong-Sung;Jang, Keon-Soo;Son, Ji-Hye;Bae, Hyun-Cheol;Choi, Kwang-Seong
    • ETRI Journal
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    • v.41 no.6
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    • pp.820-828
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    • 2019
  • A highly reliable conductive adhesive obtained by transient liquid-phase sintering (TLPS) technologies is studied for use in high-power device packaging. TLPS involves the low-temperature reaction of a low-melting metal or alloy with a high-melting metal or alloy to form a reacted metal matrix. For a TLPS material (consisting of Ag-coated Cu, a Sn96.5-Ag3.0-Cu0.5 solder, and a volatile fluxing resin) used herein, the melting temperature of the metal matrix exceeds the bonding temperature. After bonding of the TLPS material, a unique melting peak of TLPS is observed at 356 ℃, consistent with the transient behavior of Ag3Sn + Cu6Sn5 → liquid + Cu3Sn reported by the National Institute of Standards and Technology. The TLPS material shows superior thermal conductivity as compared with other commercially available Ag pastes under the same specimen preparation conditions. In conclusion, the TLPS material can be a promising candidate for a highly reliable conductive adhesive in power device packaging because remelting of the SAC305 solder, which is widely used in conventional power modules, is not observed.

A Study on the Auxiliary Power Supply for the Railway Vehicle by Using Wide Band Gap Device (Wide Band Gap 소자를 적용한 철도차량용 보조전원장치에 관한 연구)

  • Choi, Yeon-Woo;Lee, Byoung-Hee
    • The Transactions of the Korean Institute of Power Electronics
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    • v.23 no.3
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    • pp.168-173
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    • 2018
  • In this paper, an auxiliary power supply (APS) for railroad cars is proposed. The APS can reduce the number of devices required to supply power through structural modification and operates at a high switching frequency by application of a SiC device. The voltage stress on the device in the proposed circuit can be reduced to less than half of the input voltage of the system; thus, a device with low breakdown voltage can be designed. By adapting a SiC device instead of an IGBT device, the proposed circuit can reduce switching and conduction losses and operate at a high switching frequency, thereby reducing output voltage and inductor current ripples in the proposed circuit. The theoretical analysis results of the proposed APS are verified with a 40 kW computer-based simulation and a 2 kW experiment.

Analysis of Low Power and Channel Interferences for Zigbee (Zigbee의 저전력화와 채널간섭 분석)

  • Kang, Min-Goo;Shin, Ho-Jin
    • Journal of Internet Computing and Services
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    • v.11 no.3
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    • pp.33-41
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    • 2010
  • The battery consumption and the wireless communication pattern were analyzed for the low power and the improvement of channel interferences between of Zigbee networks and WPAN(Wireless Personal Area Network). The communication patterns considering end device's battery saving during channel searching period were analyzed for low power consumption topology of Zigbee dynamic ad-hoc characteristics. And, the communication patterns were analyzed due to channel interferences between WLAN and Random Back off of Zigbee, too. As a result, the communication patterns of Zigbee's coordinator and end devices is alleviated for the longer battery life time of Zigbee's end device due to Zigbee's end device setting techniques.

The Process and Fabrication of 500 V Unified Trench Gate Power MOSFET (500 V급 Unified Trench Gate Power MOSFET 공정 및 제작에 관한 연구)

  • Kang, Ey-Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.10
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    • pp.720-725
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    • 2013
  • Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have analyzed trench process, field limit ring process for fabrication of unified trench gate power MOSFET. And we have analyzed electrical characteristics of fabricated unified trench gate power MOSFET. The optimal trench process was based on SF6. After we carried out SEM measurement, we obtained superior trench gate and field limit ring process. And we compared electrical characteristics of planar and trench gate unified power MOSFET after completing device fabrication. As a result, the both of them was obtained 500 V breakdown voltage. However trench gate unified power MOSFET was shown improved Vth and on state voltage drop characteristics than planar gate unified power MOSFET.

The Battery Charger System for Electric Bicycle using Photovoltaic Power (태양광 발전을 이용한 전기자전거용 배터리 충전장치)

  • Won, Dong-Jo;Lee, Joo-Hyuk;Kim, Jae-Hyung;Won, Chung-Yuen;Jung, Yong-Chae
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2008.05a
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    • pp.53-56
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    • 2008
  • In this paper, we propose the battery charging device for electric bicycle using photovoltaic power. DC voltage from the solar cells is low, it needs to be step-up by the power conversion device. The power conversion device applied to this paper is phase-shift full-bridge converter. This converter steps-up from 12${\sim}$22[Vdc] to 36[Vdc] for charging the battery of electric bicycle. Phase-shift full-bridge converter(PSFB) can obtain twice as much DC voltage compared with half-bridge converter, thus it has lower current stress less than half-bridge converter. It is simulated and tested the battery charging device using photovoltaic power.

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Device Suitability Analysis by Comparing Performance of SiC MOSFET and GaN Transistor in Induction Heating System (유도 가열 시스템에서 SiC MOSFET과 GaN Transistor의 성능 비교를 통한 소자 적합성 분석)

  • Cha, Kwang-Hyung;Ju, Chang-Tae;Min, Sung-Soo;Kim, Rae-Young
    • The Transactions of the Korean Institute of Power Electronics
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    • v.25 no.3
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    • pp.204-212
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    • 2020
  • In this study, device suitability analysis is performed by comparing the performance of SiC MOSFET and GaN Transistor, which are WBG power semiconductor devices in the induction heating (IH) system. WBG devices have the advantages of low conduction resistance, switching losses, and fast switching due to their excellent physical properties, which can achieve high output power and efficiency in IH systems. In this study, SiC and GaN are applied to a general half-bridge series resonant converter topology to compare the conduction loss, switching loss, reverse conduction loss, and thermal performance of the device in consideration of device characteristics and circuit conditions. On this basis, device suitability in the IH system is analyzed. A half-bridge series resonant converter prototype using the SiC and GaN of a 650-V rating is constructed to verify device suitability through performance comparison and verified through an experimental comparison of power loss and thermal performance.

Novel Carrier-Based PWM Strategy of a Three-Level NPC Voltage Source Converter without Low-Frequency Voltage Oscillation in the Neutral Point

  • Li, Ning;Wang, Yue;Lei, Wanjun;Niu, Ruigen;Wang, Zhao'an
    • Journal of Power Electronics
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    • v.14 no.3
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    • pp.531-540
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    • 2014
  • A novel carrier-based PWM (CBPWM) strategy of a three-level NPC converter is proposed in this paper. The novel strategy can eliminate the low-frequency neutral point (NP) voltage oscillation under the entire modulation index and full power factor. The basic principle of the novel strategy is introduced. The internal modulation wave relationship between the novel CBPWM strategy and traditional SPWM strategy is also studied. All 64 modulation wave solutions of the CBPWM strategy are derived. Furthermore, the proposed CBPWM strategy is compared with traditional SPWM strategy regarding the output phase voltage THD characteristics, DC voltage utilization ratio, and device switching losses. Comparison results show that the proposed strategy does not cause NP voltage oscillation. As a result, no low-frequency harmonics occur on output line-to-line voltage and phase current. The novel strategy also has higher DC voltage utilization ratio (15.47% higher than that of SPWM strategy), whereas it causes larger device switching losses (4/3 times of SPWM strategy). The effectiveness of the proposed modulation strategy is verified by simulation and experiment results.