• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.6 s.348
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• pp.9-17
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• 2006

We proposed a new High-speed CMOS Level Up/Down Shifter circuits that can be used with Dynamic Voltage and Frequency Scaling(DVFS) algorithm, for low power system in the SoC(System-on-Chip). This circuit used to interface between the other voltage levels in each CMOS circuit boundary, or between multiple core voltage levels in a system bus. Proposed circuit have advantage that decrease speed attenuation and duty ratio distortion problems for interface. The level up/down shifter of the proposed circuit designed that operated from multi core voltages$(0.6\sim1.6V)$ to used voltage level for each IP at the 500MHz input frequency The proposed circuit supports level up shifting from the input voltage levels, that are standard I/O voltages 1.8V, 2.5V, 3.3V, to multiple core voltage levels in between of $0.6V\sim1.6V$, that are used internally in the system. And level down shifter reverse operated at 1Ghz input frequency for same condition. Simulations results are shown to verify the proposed function by Hspice simulation, with $0.6V\sim1.6V$ CMOS Process, $0.13{\mu}m$ IBM CMOS Process and $0.65{\mu}m$ CMOS model parameters. Moreover, it is researched delay time, power dissipation and duty ration distortion of the output voltage witch is proportional to the operating frequency for the proposed circuit.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.6
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• pp.1-8
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• 2016

Current sensors are used widely in the fields of current control, monitoring, and measuring. They have become more popular with the increasing demand for smart grids in a power network, generation of renewable energy, electric cars, and hybrid cars. Although open loop Hall effect current sensors have merits, such as low cost, small size, and weight, they have low accuracy. This paper describes the design and fabrication of a 300A open loop current sensor that has high accuracy and temperature performance. The core of the current sensor was calculated numerically and the signal conditioning circuits were designed using circuit analysis software. The characteristics of the manufactured open loop current sensor of 300 A class was measured at currents up to 300 A. According to the test of the current sensor, the accuracy error and linearity error were 0.75% and 0.19%, respectively. When the temperature compensation was carried out with the relevant circuit, the temperature coefficients were less than $0.012%/^{\circ}C$ at temperatures between $-25^{\circ}C$ and $85^{\circ}C$.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.248-253
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• 2005

We designed and fabricated a compact multi-mode interference (MMI) wavelength demultiplexer using the concept of 'Improved Quasi-State' modes. The output power and extinction ratio were improved by utilizing modal phase error which is specially occurred in low-index contrast. For a designed demultiplexer, the mode propagation analysis with effective index approximation shows significant improvement of extinction ratio to -25 dB for both $1.31{\mu}m\;and\;1.51{\mu}m$ wavelength region and the split-length was reduced about 1/5 of other MMI devices. The fabricated device shows successful characteristics for both 1.31 and $1.55{\mu}m$ wavelengths. These results demonstrate the potential of low-index materials system and the embossing process for photonic integrated circuits.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.10
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• pp.33-41
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• 2000

Pyroelectric characteristics such as voltage responsivity, noise equivalent power and detectivity are modeled 3-dimensionaly considering th interaction of each parameters. Also, the circuit is designed to set up the frequency band width and the signal amplification of the pyroelectric IR sensor. The case of low frequency region shows that the voltage response increases with the independence of the sensor area as the thickness decreases. In the high frequency region, it is found that the voltage response with the load resistor of 20$G{\Omega}$ increases with the independence of the sensor thickness as the sensor area decreases. In the low frequency region, the detectivity becomes excellent at th load resistor of 20$G{\Omega}$, the sensor area larger than $4{\times}10^{-10}m^2$ and the sensor thickness thinner than $1{\times}10^{-5}m$, while, in the high frequency region, it shows high value at the sensor thickness thinner than $1{\times}10^{-5}m$ and the sensor area smaller than $2{\times}10^{-10}m^2$ with the independence of the load resistor. In the circuit design, quasi-boot-strap circuit is employed, in which a single op-amp is connected to the drain of JFFT. Desirable frequency band width, amplification rate and the remarkable drop of noise of about 56% from that of conventional circuits with double op-amps are obtained.

• Journal of IKEEE
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• v.26 no.3
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• pp.422-429
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• 2022

A light sensor chip requires a small capacity eFuse (electrical fuse) OTP (One-Time Programmable) memory IP (Intellectual Property) to trim analog circuits or set initial values of digital registers. In this paper, 128-bit eFuse OTP IP is designed using only 3.3V MV (Medium Voltage) devices without using 1.8V LV (Low-Voltage) logic devices. The eFuse OTP IP designed with 3.3V single MOS devices can reduce a total process cost of three masks which are the gate oxide mask of a 1.8V LV device and the LDD implant masks of NMOS and PMOS. And since the 1.8V voltage regulator circuit is not required, the size of the illuminance sensor chip can be reduced. In addition, in order to reduce the number of package pins of the illumination sensor chip, the VPGM voltage, which is a program voltage, is applied through the VPGM pad during wafer test, and the VDD voltage is applied through the PMOS power switching circuit after packaging, so that the number of package pins can be reduced.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.3
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• pp.450-456
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• 2016

STDR (sequence time domain reflectometry) to detect a cable fault using a pseudo noise sequence as a reference signal, and time correlation analysis between the reference signal and reflection signal is robust to noisy environments and can detect intermittent faults including open faults and short circuits. On the other hand, if the distance of the fault location is far away or the fault type is a soft fault, attenuation of the reflected signal becomes larger; hence the correlation coefficient in the STDR becomes smaller, which makes fault detection difficult and the measurement error larger. In addition, automation of the fault location by detection of phase and peak value becomes difficult. Therefore, to improve the cable fault detection of a conventional STDR, this paper proposes the algorithm in that the peak value of the correlation coefficient of the reference signal is detected, and a peak value of the correlation coefficient of the reflected signal is then detected after removing the reference signal. The performance of the proposed method was validated experimentally in low-voltage power cables. The performance evaluation showed that the proposed method can identify whether a fault occurred more accurately and can track the fault locations better than conventional STDR despite the signal attenuation. In addition, there was no error of an automatic fault type and its location by the detection of the phase and peak value through the elimination of the reference signal and normalization of the correlation coefficient.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.38 no.11
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• pp.63-70
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• 2001

We demonstrate the MMIC (monolithic microwave integrated circuit) frequency doublers generating stable and low-cost 29 GHz local oscillator signals from 14.5 GHz input signals. These devices were designed and fabricated by using the M MIC integration process of $0.1\;{\mu}m$ gate-length PHEMTs (pseudomorphic high electron mobility transistors) and passive components. The measurements showed S11 or -9.2 dB at 145 GHz, S22 of -18.6 dG at 29 GHz and a minimum conversion loss of 18.2 dB at 14.5 GHz with an input power or 6 dBm. Fundamental signal of 14.5 GHz were suppressed below 15.2 dBe compared to the second harmonic signal at the output port, and the isolation characteristics of fundamental signal between the input and the output port were maintained above :i0 dB in the frequency range 10.5 GHz to 18.5 GHz. The chip size of the fabricated MMIC frequency doubler is $1.5{\times}2.2\;mm^2$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.3
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• pp.623-628
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• 2009

The emergence of compact and low-power wireless communication sensors and actuators in the technology supporting the ongoing miniaturization of processing and storage allows for entirely the new kinds of embedded systems. These systems are distributed and deployed in environments where they may have been designed into a particular control method, and are often very dynamic. Collection of devices can communicate to achieve a higher level of coordinated behavior. Wireless sensor nodes deposited in various places provide light, temperature, and activity measurements. Wireless sensor nodes attached to circuits or appliances sense the current or control the usage. Together they form a dynamic and multi-hop routing network connecting each node to more powerful networks and processing resources. Wireless sensor networks are a specific-application and therefore they have to involve both software and hardware. They also use protocols that relate to both applications and the wireless network. Wireless sensor networks are consumer devices supporting multimedia applications such as personal digital assistants, network computers, and mobile communication devices. Wireless sensor networks are becoming an important part of industrial and military applications. The characteristics of modem embedded systems are the capable of communicating adapting the different operating environments. In this paper, We designed and implemented sensor network system which shows through host PC sensing temperature and humidity data transmitted for wireless sensor nodes composed wireless temperature and humidity sensor and designs sensor nodes using embedded system with the intention of studying USN.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.207-214
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• 2005

This paper presents a channel structure for promising high performance pseudomorphic high electron mobility transistor(pHEMT) switching device for design and fabricating of microwave control circuits, such as switches, phase shifters, attenuators, limiters, for application in personal mobile communication systems. Using the designed epitaxial channel layer structure and ETRI's $0.5\mu$m pHEMT switch process, single pole double throw (SPDT) Tx/Rx monolithic microwave integrated circuit (MMIC) switch was fabricated for 2.4 GHz and 5 GHz band wireless local area network (WLAN) systems. The SPDT switch exhibits a low insertion loss of 0.849 dB, high isolation of 32.638 dB, return loss of 11.006 dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V These performances are enough for an application to 5 GHz band WLAN systems.