• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.6 s.360
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• pp.89-93
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• 2007

This paper presents the design and the implementation of input/output (I/O) interface circuits for 2.5 Gbps operation in a 3.3V 0.35um CMOS technology. Due to the differential transmission technique and low voltage swing, LVDS(low-voltage differential signaling) has been widely used for high speed transmission with low power consumption. This interface circuit is fully compatible with the LVDS standard. The LVDS proposed in this paper utilizes a telescopic amplifier. This circuit is operated up to 2.3 Gbps. The circuit has a power consumption of 25. 5mW. This circuit is designed with Samsung $0.35{\mu}m$ CMOS process. The validity and effectiveness are verified through the HSPICE simulation.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.125-128
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• 2001

In this paper, we propose a low power Scan-based Built-ln Self Test based on circuit partitioning and pattern suppression using modified test control unit. To partition a CUT(Circuit Under Testing), the MHPA(Multilevel Hypergraph Partition Algorithm) is used. As a result of circuit partition, we can reduce the total length of test pattern, so that power consumptions are decreased in test mode. Also, proposed Scan-based BIST architecture suppresses a redundant test pattern by inserting an additional decoder in BIST control unit. A decoder detects test pattern with high fault coverage, and applies it to partitioned circuits. Experimental result on the ISCAS benchmark circuits shows the efficiency of proposed low power BIST architecture.

• ETRI Journal
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• v.35 no.2
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• pp.226-233
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• 2013

This paper presents a two-stage power-efficient class-AB operational transconductance amplifier (OTA) based on an adaptive biasing circuit suited to low-power dissipation and low-voltage operation. The OTA shows significant improvements in driving capability and power dissipation owing to the novel adaptive biasing circuit. The OTA dissipates only $0.4{\mu}W$ from a supply voltage of ${\pm}0.6V$ and exhibits excellent high driving, which results in a slew rate improvement of more than 250 times that of the conventional class-AB amplifier. The design is fabricated using $0.18-{\mu}m$ CMOS technology.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.06a
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• pp.304-309
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• 2005

This paper presents an electronic ballast using a step down converter, a low frequency inverter for high intensity short-arc discharge lamp. The proposed ballast is composed of a full-wave rectifier, a step down converter operated as a current source with power regulation and a low frequency inverter with external ignition circuit. The ignition circuit generates high voltage pulse of $3{\sim}5[kV]$ peak, 130[Hz] periodically. Moreover, it is able to reignite at regular intervals by protective circuit. As experimental results on the test, acoustic resonance phenomenon is eliminated by operating the low frequency square wave voltage and current. Lamp voltage, current and consumption power are measured 123.8[V], 8.1[A] and 1,002[W], respectively. It was confirmed that the designed ballast operate the lamp with a constant power.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.5
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• pp.212-221
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• 1996

A CMOS comparator is designed for low voltage and low power operations. The proposed comparator consists of a preadmplifier followed by a regenerative latch. The preasmplifier reduces the power consumption to a half with the power-down mode and the dynamic offsets of the latch, which is affected by each device mismatch, is statistically analyzed. The circuit is designed and simulated using a 0.8.mu.m n-well CMOS process and the dissipated power is 0.16mW at a 20MHz clock speed based on a 3V supply.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.875-878
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• 1998

In this thesis, we present efficient techniques to reduce the switching activity in a CMOS combinational logic network based on local logic transforms. But this techniques is not appropriate in the view of testability because of deteriorating the random pattern testability of a circuit. This thesis proposes a circuit design method having two operation modes. For the sake of power dissipation(normal operation mode), a gate output switches as rarely as possible, implying highly skewed signal probabilities for 1 or 0. On the other hand, at test mode, signals have probabilities of being 1 or 0 approaching 0.5, so it is possible to exact both stuck-at faults on the wire. Therefore, the goals of synthesis for low power and random pattern testability are achieved. The hardware overhead sof proposed design method are only one primary input for mode selection and AND/OR gate for each redundant connection.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.909-912
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• 2005

According to miniaturization trend of rehabilitation medical equipment such as hearing aid, study to replace previous complex system with semiconductor SOC (System-on-Chip) chip becomes lively. In this study, after investigating of existent hearing aid performance in circuit design approach, low electric power consuming, single power supply (1.4V battery) CMOSS OP AMP was designed. Analog circuit design tools such as Hspice and Cadence were used for circuit simulation and implementing layout design. This study shows technical methods particularly for layout design. The work is done in pmos and nmos active element layout design in addition to passive element design such as resister, capacitor and inductor.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.805-808
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• 2005

In this study, the design of advanced LVDS(Low Voltage Differential Signaling) I/O interface circuit with new structural low triggering ESD(Electro-Static Discharge) protection circuit was investigated. Due to the differential transmission technique and low power consumption at same time. maximum transmission data ratio of designed LVDS transmitter was simulated to 5Gbps, Also, the LIGCSCR(Latch-up Immune Gate Coupled SCR)was designed. It consists of PLVTSCR (P-type Low Voltage Trigger SCR), control NMOS and RC network. The triggering voltage was simulated to 3.6V. And the latch-up characteristics were improved. Finally, we performed the layout high speed I/O interlace circuit with the low triggered ESD protection device in one-chip.

• Journal of Satellite, Information and Communications
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• v.12 no.4
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• pp.115-119
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• 2017

Intermodulation distortion degrades the S/N(signal-to-noise) of the original signal and also affects the adjacent channels. Intermodulation distortion is mainly caused by the nonlinear characteristics of the power amplifier. If the power amplifier with nonlinear characteristics has a memory effect, the intermodulation distortions occurred in the power amplifier are generated in various and complex forms. The predistorter is used as a way to improve intermodulation distortions. In order to efficiently utilize the performance of the predistorter, the memory effect of the power amplifier must be reduced. In this paper, we describe the design method of bias circuit to reduce the memory effect in power amplifiers. To reduce the memory effect, the bias circuit must have a high impedance for the signal and a low impedance for the envelope(modulating signal) and the second harmonic component of the signal. To verify the performance of the bias circuit designed considering the memory effect, a power amplifier operating at 170 ~ 220MHz was designed and implemented. The designed bias circuit has a large impedance in the operating frequency band and low impedance in the envelope signal and the second harmonic of the signal. As a result of the performance measurement, it was found that the asymmetric intermodulation distortion component is improved by 3.7dB.

• Journal of Korea Society of Industrial Information Systems
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• v.19 no.6
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• pp.1-6
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• 2014

The delay-insensitive Null Convention Logic (NCL) asynchronous design as one of innovative asynchronous logic design methodologies has many advantages of inherent robustness, power consumption, and easy design reuses. However, transistor-level structures of conventional NCL gate cells have weakness of low speed, high area overhead or high wire complexity. Therefore, this paper proposes a new high-speed NCL gate cells designed at transistor level for high-speed, low area overhead, and low wire complexity. The proposed NCL gate cells have been compared to the conventional NCL gates in terms of circuit delay, area and power consumption.