• Title/Summary/Keyword: Low temperatures

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Microwave properties of pulsed-laser SrTiO$_3$ thin films at low temperatures

  • Lee, G.D.;Kim, C.O.;Hong, J.P.;Kwak, J.S.
    • 한국초전도학회:학술대회논문집
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    • v.10
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    • pp.207-210
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    • 2000
  • Properties of SrTiO$_3$ thin films were characterized under the influence of an applied dc voltage utilizing a gold resonator with a flip-chip capacitor. The measurements were performed at microwave frequency ranges and low temperatures cryogenic temperatures. The dielectric constant of 830 and the low loss tangent of 6X10$^{-3}$ at 3.64 GHz were observed at 90 K and 100 V. The quality in the SrTiO$_3$ film was presented in terms of fractional frequency under the bias voltages and cryogenic temperatures.

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Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs

  • Wu, Yu;Sun, Yaojie;Lin, Yandan
    • Journal of Power Electronics
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    • v.14 no.4
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    • pp.788-795
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    • 2014
  • This paper demonstrates the dynamic behaviors of paralleled high power IGBTs using trench and fieldstop technologies. Four IGBTs are paralleled and standard deviation is adopted to represent the imbalance. Experiments are conducted under three different operation conditions and at different temperatures ranging from $-25^{\circ}C$ to $125^{\circ}C$. The experimental results show that operation at very low and very high temperatures usually aggravates the switching behaviors. There is a trade-off between the balance and the losses at low temperatures. These results can help in the design of heat sinks in paralleling applications confronting very low temperatures.

Comparative Whole Cell Proteomics of Listeria monocytogenes at Different Growth Temperatures

  • Won, Soyoon;Lee, Jeongmin;Kim, Jieun;Choi, Hyungseok;Kim, Jaehan
    • Journal of Microbiology and Biotechnology
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    • v.30 no.2
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    • pp.259-270
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    • 2020
  • Listeria monocytogenes is a gram-positive, facultative anaerobe food pathogen responsible for the listeriosis that mostly occurs during the low-temperature storage of a cold cut or dairy products. To understand the systemic response to a wide range of growth temperatures, L. monocytogenes were cultivated at a different temperature from 10℃ to 42℃, then whole cell proteomic analysis has been performed both exponential and stationary cells. The specific growth rate increased proportionally with the increase in growth temperature. The maximum growth rate was observed at 37℃ and was maintained at 42℃. Global protein expression profiles mainly depended on the growth temperatures showing similar clusters between exponential and stationary phases. Expressed proteins were categorized by their belonging metabolic systems and then, evaluated the change of expression level in regard to the growth temperature and stages. DnaK, GroEL, GroES, GrpE, and CspB, which were the heat&cold shock response proteins, increased their expression with increasing the growth temperatures. In particular, GroES and CspB were expressed more than 100-fold than at low temperatures during the exponential phase. Meanwhile, CspL, another cold shock protein, overexpressed at a low temperature then exponentially decreased its expression to 65-folds. Chemotaxis protein CheV and flagella proteins were highly expressed at low temperatures and stationary phases. Housekeeping proteins maintained their expression levels constant regardless of growth temperature or growth phases. Most of the growth related proteins, which include central carbon catabolic enzymes, were highly expressed at 30℃ then decreased sharply at high growth temperatures.

Oxygen Permeability Measurement of $ZrO_2-TiO_2-YB_2O_3$ Mixed Conductor

  • Hitoshi Naito;Kim, Hitoshi ishima;Toru Takahashi;Hiroo Yugami
    • The Korean Journal of Ceramics
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    • v.6 no.2
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    • pp.124-128
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    • 2000
  • Electrical properties of $ZrO_2-TiO_2Yb_2O_3$mixed conductor (Ti-YbSZ) were investigated. This mixed conductor can be applied as a membrane for gas separation at high temperatures. The total conductivity decreased with increasing the $TiO_2$concentration. At high temperatures, the rate of the conductivity degradation became smaller than that at low temperatures. From the oxygen partial pressure dependence of the total conductivity of Ti-YbSZ, the electronic conductivity increased with increasing $TiO_2$concentration at low oxygen partial pressures and at high temperatures. Both 15 and 20 mol% $TiO_2$doped YbSZ showed high oxygen permeability. Mixed conductors, which has high $TiO_2$concentration in YbSZ, are promising materials for using as a membrane for gas separation at high temperatures.

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Quality Characteristics of Yackwa Baked and Dipping with Goami Powder (굽기와 집청 조건에 따른 고아미 구운 약과의 품질 특성에 미치는 영향)

  • Kim, Hyun-Ah;Lee, Kyung-Hee
    • Journal of the East Asian Society of Dietary Life
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    • v.22 no.5
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    • pp.604-612
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    • 2012
  • The quality characteristics of yackwa made with goami powder at different baking temperatures (150, 160, 170, 180) and baking times (15, 20, 25 min) and at different dipping temperatures (65 and $80^{\circ}C$) and dipping times (15 and 30 min) were evaluated. To determine the optimal temperature and time for yackwa containing goami powder, color values, preference color and pictures were determind. The baking temperatures were $150^{\circ}C$ for 25 min, $160^{\circ}C$ for 15 min and 20 min, and $170^{\circ}C$ for 15 min. The weight of yackwa was heavier at low dipping temperatures and long dipping times. L-values and b-values were the highest at short dipping times. Hardness, moisture and overall preference was the lowest at low dipping temperatures and long dipping times.

Progess in Fabrication Technologies of Polycrystalline Silicon Thin Film Transistors at Low Temperatures

  • Sameshima, T.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.129-134
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    • 2004
  • The development of fabrication processes of polycrystalline-silicon-thin-film transistors (poly-Si TFTs) at low temperatures is reviewed. Rapid crystallization through laser-induced melt-regrowth has an advantage of formation of crystalline silicon films at a low thermal budget. Solid phase crystallization techniques have also been improved for low temperature processing. Passivation of $SiO_2$/Si interface and grain boundaries is important to achieve high carrier transport properties. Oxygen plasma and $H_2O$ vapor heat treatments are proposed for effective reduction of the density of defect states. TFTs with high performance is reported.

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Variations of Soil Temperatures in Winter and Spring at a High Elevation Area (Boulder, Colorado)

  • Lee, Jin-Yong;Lim, Hyoun Soo;Yoon, Ho Il;Kim, Poongsung
    • Journal of Soil and Groundwater Environment
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    • v.20 no.5
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    • pp.16-25
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    • 2015
  • The City of Boulder is located at an average elevation of 1,655 m (5,430 feet), the foothills of the Rocky Mountains in Colorado. Its daily air temperature is much varying and snow is very frequent and heavy even in spring. This paper examines characteristics of shallow (surface and depth = 10 cm) soil temperatures measured from January to May 2015 in the high elevation city Boulder, Colorado. The surface soil temperature quickly responded to the air temperature with the strongest periodicity of 1 day while the subsurface soil temperatures showed a less correlation and delayed response with that. The short-time Fourier of the soil temperatures uncovered their very low frequencies characteristics in heavy snow days while it revealed high frequencies of their variations in warm spring season. The daily minimum air temperature exhibited high cross-correlations with the soil temperatures without lags unlike the maximum air temperature, which is derived from its higher and longer auto-correlation and stronger spectrums of low frequencies than the maximum air temperature. The snow depth showed an inverse relationship with the soil temperature variations due to snow's low thermal conductivity and high albedo. Multiple regression for the soil temperatures using the air temperature and snow depth presented its predicting possibility of them even though the multiple r2 of the regression is not that much satisfactory (r2 = 0.35-0.64).

The crystallinity of silicon films deposited at low temperatures with Remote Plasma Enhanced Chemical Vapor Deposition(RPECVD) (원거리 플라즈마 화학증착을 이용한 규소 박막의 결정성)

  • 김동환;이일정;이시우
    • Journal of the Korean Vacuum Society
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    • v.4 no.S1
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    • pp.1-6
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    • 1995
  • Polycrystalline Si films have been used in many applications such as thin film transistors(TFT), image sensors and LSI applications. In this research deposition of Si films at low temperatures with remote plasma enhanced CVD from Si2H6-SiF4-H2 on SiO2 was studied and their crystallinity was investigated. It was condluded that growth of crystalline Si films was favorable with (1) low Si2H6 flow rates, (2) moderate plasma power, (3) moderate SiF4 flow rates, (4) moderate substrate temperature, and (5) suitable method of surface cleaning.

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Flexural performance of double skin composite beams at the Arctic low temperature

  • Yan, Jia-Bao;Dong, Xin;Wang, Tao
    • Steel and Composite Structures
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    • v.37 no.4
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    • pp.431-446
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    • 2020
  • This paper presents the flexural performance of double skin composite beams (DSCBs) at different Arctic low temperatures. 12 DSCBs were prepared and tested under two-point loading at different Arctic low temperatures of 20, -30, -50, and -70℃. The studied parameters include low-temperature level (T), steel-faceplate thickness (t), shear span ratio (λ), and spacing of headed studs (S). The experimental investigations under two-point loading tests showed that flexural failure occurred to all DSCBs, even including the specimen designed with the small λ ratio of 2.9. The ultimate strength behaviours of DSCBs were improved due to the improved mechanical properties of constructional materials and the confinement on shear connectors. The DSCB subjected to two-point loading and low temperatures exhibits a five-stage working mechanism. The stiffness and strength indexes of DSCBs increase linearly with temperature and t value increasing, while decreasing as shear span ratio boosts. In the contrast, the change of S value from 150 to 200 mm has little effect on the ultimate strength behavior of DSCB.

Reverse-bias Leakage Current Mechanisms in Cu/n-type Schottky Junction Using Oxygen Plasma Treatment

  • Kim, Hogyoung
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.2
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    • pp.113-117
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    • 2016
  • Temperature dependent reverse-bias current-voltage (I-V) characteristics in Cu Schottky contacts to oxygen plasma treated n-InP were investigated. For untreated sample, current transport mechanisms at low and high temperatures were explained by thermionic emission (TE) and TE combined with barrier lowering, respectively. For plasma treated sample, experimental I-V data were explained by TE or TE combined with barrier lowering models at low and high temperatures. However, the current transport was explained by a thermionic field emission (TFE) model at intermediate temperatures. From X-ray photoemission spectroscopy (XPS) measurements, phosphorus vacancies (VP) were suggested to be generated after oxygen plasma treatment. VP possibly involves defects contributing to the current transport at intermediate temperatures. Therefore, minimizing the generation of these defects after oxygen plasma treatment is required to reduce the reverse-bias leakage current.