Microwave properties of pulsed-laser SrTiO$_3$ thin films at low temperatures

  • Lee, G.D. (Dept. Physics, Hanyang University) ;
  • Kim, C.O. (Dept. Physics, Hanyang University) ;
  • Hong, J.P. (Dept. Physics, Hanyang University) ;
  • Kwak, J.S. (Dept. Physics, Hanyang University)
  • Published : 2000.08.16

Abstract

Properties of SrTiO$_3$ thin films were characterized under the influence of an applied dc voltage utilizing a gold resonator with a flip-chip capacitor. The measurements were performed at microwave frequency ranges and low temperatures cryogenic temperatures. The dielectric constant of 830 and the low loss tangent of 6X10$^{-3}$ at 3.64 GHz were observed at 90 K and 100 V. The quality in the SrTiO$_3$ film was presented in terms of fractional frequency under the bias voltages and cryogenic temperatures.

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