• KSII Transactions on Internet and Information Systems (TIIS)
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• 제14권11호
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• pp.4395-4412
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• 2020

The multisource image fusion has become an active topic in the last few years owing to its higher segmentation rate. To enhance the accuracy of multimodal pig-body feature segmentation, a multisource image fusion method was employed. Nevertheless, the conventional multisource image fusion methods can not extract superior contrast and abundant details of fused image. To superior segment shape feature and detect temperature feature, a new multisource image fusion method was presented and entitled as NSST-GF-IPCNN. Firstly, the multisource images were resolved into a range of multiscale and multidirectional subbands by Nonsubsampled Shearlet Transform (NSST). Then, to superior describe fine-scale texture and edge information, even-symmetrical Gabor filter and Improved Pulse Coupled Neural Network (IPCNN) were used to fuse low and high-frequency subbands, respectively. Next, the fused coefficients were reconstructed into a fusion image using inverse NSST. Finally, the shape feature was extracted using automatic threshold algorithm and optimized using morphological operation. Nevertheless, the highest temperature of pig-body was gained in view of segmentation results. Experiments revealed that the presented fusion algorithm was able to realize 2.102-4.066% higher average accuracy rate than the traditional algorithms and also enhanced efficiency.

• 반도체디스플레이기술학회지
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• 제22권1호
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• pp.64-71
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• 2023

In this study, we investigated the effects of BiAlSiO glass composition on its glass forming range, thermal properties, and plasma resistance. The results showed that increasing the Al2O3 content suppressed the tendency for crystallization and hindered glass formation beyond a certain threshold. Bi2O3 was found to increase the content of non-bridging oxygen, resulting in a decrease in glass transition temperature and an increase in thermal expansion coefficient. Furthermore, the etching rate was found to improve with increasing Al2O3 content but decrease with increasing SiO2 content. It was concluded that the boiling point of fluorinated compounds should be considered to 900℃. Therefore, this study is expected to contribute to the understanding of the properties of BiAlSiO glass and its application to low temperature melting PRG compositions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.302.1-302.1
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• 2016

Solution-processed amorphous metal-oxide thin-film transistors (TFTs) are considered as promising candidates for the upcoming transparent and flexible electronics due to their transparent property, good performance uniformity and possibility to fabricate at a low-temperature. In addition, solution processing metal oxide TFTs may allow non-vacuum fabrication of flexible electronic which can be more utilizable for easy and low-cost fabrication. Recently, for high-mobility oxide TFTs, multi-layered oxide channel devices have been introduced such as superlattice channel structure and heterojunction structure. However, only a few studies have been mentioned on the bias illumination stress in the multi- layered oxide TFTs. Therefore, in this research, we investigated the effects of bias illumination stress in solution-processed bilayer oxide TFTs which are fabricated by the deep ultraviolet photochemical activation process. For studying the electrical and stability characteristics, we implemented positive bias stress (PBS) and negative bias illumination stress (NBIS). Also, we studied the electrical properties such as field-effect mobility, threshold voltage ($V_T$) and subthreshold slop (SS) to understand effects of the bilayer channel structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.151-151
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• 2010

In this paper, the electrically properties of nonvolatile memory (NVM) using multi-stacks gate insulators of oxide-nitride-oxynitride (ONOn) and active layer of the low temperature polycrystalline silicon (LTPS) were investigated. From hydrogenated amorphous silicon (a-Si:H), the LTPS thin films with high crystalline fraction of 96% and low surface's roughness of 1.28 nm were fabricated by the metal induced crystallization (MIC) with annealing conditions of $650^{\circ}C$ for 5 hours on glass substrates. The LTPS thin film transistor (TFT) or the NVM obtains a field effect mobility of ($\mu_{FE}$) $10\;cm^2/V{\cdot}s$, threshold voltage ($V_{TH}$) of -3.5V. The results demonstrated that the NVM has a memory window of 1.6 V with a programming and erasing (P/E) voltage of -14 V and 14 V in 1 ms. Moreover, retention properties of the memory was determined exceed 80% after 10 years. Therefore, the LTPS fabricated by the MIC became a potential material for NVM application which employed for the system integration of the panel display.

• 천문학회지
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• 제43권5호
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• pp.161-168
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• 2010

Magnetars are neutron stars possessing a magnetic field of about $10^{14}-10^{15}$ G at the surface. Thermodynamic properties of neutron star matter, approximated by pure neutron matter, are considered at finite temperature in strong magnetic fields up to $10^{18}$ G which could be relevant for the inner regions of magnetars. In the model with the Skyrme effective interaction, it is shown that a thermodynamically stable branch of solutions for the spin polarization parameter corresponds to the case when the majority of neutron spins are oriented opposite to the direction of the magnetic field (i.e. negative spin polarization). Moreover, starting from some threshold density, the self-consistent equations have also two other branches of solutions, corresponding to positive spin polarization. The influence of finite temperatures on spin polarization remains moderate in the Skyrme model up to temperatures relevant for protoneutron stars. In particular, the scenario with the metastable state characterized by positive spin polarization, considered at zero temperature in Phys. Rev. C 80, 065801 (2009), is preserved at finite temperatures as well. It is shown that, above certain density, the entropy for various branches of spin polarization in neutron matter with the Skyrme interaction in a strong magnetic field shows the unusual behavior, being larger than that of the nonpolarized state. By providing the corresponding low-temperature analysis, we prove that this unexpected behavior should be related to the dependence of the entropy of a spin polarized state on the effective masses of neutrons with spin up and spin down, and to a certain constraint on them which is violated in the respective density range.

• 한국응용곤충학회지
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• 제52권4호
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• pp.387-394
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• 2013

갈색거저리의 온도에 따른 유충 발육시험을 15, 17, 20, 22, 25, 28 및 $30^{\circ}C$의 7개 항온조건, 광주기 14L:10D, 상대습도 60~70% 조건에서 수행하였다. 유충은 13령까지 경과하였고 항온 조건에서 사망률은 17, $20^{\circ}C$에서 극소수 개체만이 발견되었고, $22^{\circ}C$ 이상의 항온조건에서는 발견되지 않았다. 유충의 발육기간은 $17^{\circ}C$에서 244.3일로 가장 길었고, $30^{\circ}C$에서 110.8일로 가장 짧았다. $15^{\circ}C$는 부화되지 않아 유충 발육 조사가 불가능하였다. 온도와 발육율과의 관계를 알아보기 위하여 선형모형과 비선형모형(Logan 6)을 이용하였으며, 선형모형을 이용하여 추정한 전체유충의 발육영점온도는 $6.0^{\circ}C$, 발육 유효적산온도는 2564.1DD 였으며 선형, 비선형 모두 결정계수값($r^2$) 이 0.95로 높은 값을 보였다. 전체유충의 발육완료분포는 2-parameter Weibull 함수를 사용하였으며 전체 유충의 결정계수 값은 0.8502~0.9390의 양호한 모형 적합성을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.151-151
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• 2009

Recently, there has been increasing interest in amorphous oxide semiconductors to find alternative materials for an amorphous silicon or organic semiconductor layer as a channel in thin film transistors(TFTs) for transparent electronic devices owing to their high mobility and low photo-sensitivity. The fabriction of amorphous oxide-based TFTs at room temperature on plastic substrates is a key technology to realize transparent flexible electronics. Amorphous oxides allows for controllable conductivity, which permits it to be used both as a transparent semiconductor or conductor, and so to be used both as active and source/drain layers in TFTs. One of the materials that is being responsible for this revolution in the electronics is indium-zinc-tin oxide(IZTO). Since this is relatively new material, it is important to study the properties of room-temperature deposited IZTO thin films and exploration in a possible integration of the material in flexible TFT devices. In this research, we deposited IZTO thin films on polyethylene naphthalate substrate at room temperature by using magnetron sputtering system and investigated their properties. Furthermore, we revealed the fabrication and characteristics of top-gate-type transparent TFTs with IZTO layers, seen in Fig. 1. The experimental results show that by varying the oxygen flow rate during deposition, it can be prepared the IZTO thin films of two-types; One a conductive film that exhibits a resistivity of $2\times10^{-4}$ ohm${\cdot}$cm; the other, semiconductor film with a resistivity of 9 ohm${\cdot}$cm. The TFT devices with IZTO layers are optically transparent in visible region and operate in enhancement mode. The threshold voltage, field effect mobility, on-off current ratio, and sub-threshold slope of the TFT are -0.5 V, $7.2\;cm^2/Vs$, $\sim10^7$ and 0.2 V/decade, respectively. These results will contribute to applications of select TFT to transparent flexible electronics.

• 한국식품과학회지
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• 제32권2호
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• pp.265-270
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• 2000

국내에서 살균, 살충의 목적으로 7kGy의 감마선이 허가된 백삼분말을 대상으로 $0{\sim}15\;kGy$의 전자선을 조사하고 screening을 목적으로 한 PSL측정과 신뢰성이 높은 것으로 여겨지는 TL 측정에 의해 방사선 조사여부를 확인하였다. PSL을 측정한 결과 비조사구는 threshold value$(T_1)$인 700보다 낮은 값을 나타내면서 negative로 표시되어 방사선 조사되지 않은 것으로, 2.5kGy이상 조사구는 threshold value $(T_2)$인 5000보다 높은 값을 나타내면서 positive로 표시되어 방사선 조사된 것으로 확인되었다. Density separation 추출법을 이용하여 시료로부터 mineral을 분리하여 TL 측정을 실시함으로써 glow curve가 나타나는 온도범위와 glow curve의 형태를 확인하고 TL ratio를 구한 결과, 방사선 조사되지 않은 시료는 $300^{\circ}C$ 부근에서 glow curve가 나타났고 이들의 intensity 또한 낮게 나타났다. 그러나 방사선 조사구는 $200^{\circ}C$ 부근에서 아주 강한 intensity의 glow curve를 보여주었다. 또한, normalization에 의한 TL ratio는 비조사구에서 0.01, 조사구에서 0.78 이상을 나타내어 방사선 조사여부 확인이 가능하였다.

• 한국진공학회지
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• 제11권4호
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• pp.207-211
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• 2002

반도체-유전체 덮개층의 다양한 조합이 I $n_{0.53}$G $a_{0.47}$As/InGaAsP(Q1.25) 양자우물 무질서화에 미치는 영향을 PL(Photoluminescence)을 이용하여 조사하였다. 청색 편이에 대한 문턱 온도는 약 $750^{\circ}C$ 였으며 전반적으로 온도가 올라감에 따라 청색 편이도 점차 증가하였으나 $SiO_2$의 경우에는 온도가 올라감에 따라 포화되는 경향을 보였다. $SiN_{x}$ 가 $SiO_2$보다 더 큰 청색 편이를 야기하였는데 이것은 $SiN_{x}$의 낮은 성장 온도와 관계가 있는 것으로 생각된다. $SiN_{x}$의 경우 P의 확산이, 그리고 $SiO_2$의 경우 Ga의 확산이 청색 편이에 중요한 역할을 하는 것으로 여겨진다.겨진다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.106-106
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• 2011

Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.