• 한국컴퓨터정보학회논문지
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• 제17권6호
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• pp.1-11
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• 2012

공정기술이 지속적으로 발달함에 따라 멀티코어 프로세서는 성능 향상이라는 장점과 함께 내부 연결망의 긴 지연 시간, 높은 전력 소모, 그리고 발열 현상 등의 문제점들을 내포하고 있다. 이와 같은 2차원 멀티코어 프로세서의 문제점들을 해결하기 위한 방안 중 하나로 3차원 멀티코어 프로세서 구조가 주목을 받고 있다. 3차원 멀티코어 프로세서는 TSV를 이용하여 수직으로 쌓은 여러 개의 레이어들을 연결함으로써 2차원 멀티코어 프로세서와 비교하여 배선 길이를 크게 줄일 수 있다. 하지만, 3차원 멀티코어 프로세서에서는 여러 개의 코어들이 수직으로 적층되므로 전력밀도가 증가하고, 이로 인해 발열문제가 발생하여 높은 냉각 비용과 함께 신뢰성에 부정적인 영향을 유발한다. 따라서 3차원 멀티코어 프로세서를 설계할 때에는 성능과 함께 온도를 반드시 고려하여야 한다. 본 논문에서는 캐쉬 구성에 따른 3차원 쿼드코어 프로세서의 온도를 상세히 분석하고, 이를 기반으로 발열문제를 해결하기 위해저온도 캐쉬 구성 방식을 제안하고자 한다. 실험결과, 명령어 캐쉬는 최고온도가 임계값보다 낮고 데이터 캐쉬는 많은 웨이를 가지는 구성을 적용할 때 최고온도가 임계값보다 높아짐을 알 수 있다. 또한, 본 논문에서 제안하는 캐쉬구성은 쿼드코어 프로세서를 사용하는 3차원 구조에서 캐쉬의 온도 감소에 효과적일 뿐만 아니라 성능 저하 또한 거의 없음을 알 수 있다.

• Smart Structures and Systems
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• 제22권5호
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• pp.495-508
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• 2018

Shape memory alloys (SMAs) exhibit superelasticity given the ambient temperature is above the austenite finish temperature threshold, the magnitude of which significantly depends on the metal ingredients though. For the monocrystalline CuAlBe SMAs, their superelasticity was found being maintained even when the ambient temperature is down to $-40^{\circ}C$. Thus this makes such SMAs particularly favorable for outdoor seismic applications, such as the framed structures located in cold regions with substantial temperature oscillation. Due to the thermo-mechanical coupling mechanism, the hysteretic properties of SMAs vary with temperature change, primarily including altered material strength and different damping. Thus, this study adopted the monocrystalline CuAlBe SMAs as the kernel component of the SMA braces. To quantify the seismic response characteristics at various temperatures, a wide temperature range from -40 to $40^{\circ}C$ are considered. The middle temperature, $0^{\circ}C$, is artificially selected to be the reference temperature in the performance comparisons, as well the corresponding material properties are used in the seismic design procedure. Both single-degree-of-freedom systems and a six-story braced frame were numerically analyzed by subjecting them to a suite of earthquake ground motions corresponding to the design basis hazard level. To the frame structures, the analytical results show that temperature variation generates minor influence on deformation and energy demands, whereas low temperatures help to reduce acceleration demands. Further, attributed to the excellent superelasticity of the monocrystalline CuAlBe SMAs, the frames successfully maintain recentering capability without leaving residual deformation upon considered earthquakes, even when the temperature is down to $-40^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.559-562
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• 2004

A 2.2-inch QCIF+ $(176{\times}RGB{\times}220)$ TFT-LCD with integrated row driver was developed using a standard amorphous silicon TFT technology. At low temperature $({\sim}-20^{\circ}C)$, the integrated row driver operation is dramatically effected by the electron drift mobility variation $({\sim}50%)$ and the threshold voltage shift $({\sim}1V)$ of the a-Si TFT. We studied the temperature dependency of the circuit design and found that higher on-current circuit is important to guarantee good operation in wide temperature range.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.557-563
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• 2003

SiC has been an useful material for the high voltage, high temperature, and high frequency devices, however, the required high process temperature to activate the implanted p-type dopants has hindered further developments. In this study, we report, for the first time, on the laser activation of implanted Al and non-alloyed Mo ohmic contacts and its application to MOSFET fabrication. The contact and sheet resistance measured from CTLM patterns have decreased by increasing laser power, and the lowest values are 3.9 $K\Omega$/$\square$ and 1.3 $\times$ 10$^{-3}$ $\Omega$-cm$^2$, respectively, at the power density of 1.45 J/cm$^2$ The n-MOSFETs fabricated on laser activated p-well exhibit well-behaved I-V characteristics and threshold voltage reduction by reverse body voltage. These results prove that the laser process for implant activation is an alternative low temperature technology applicable to SiC devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.40-40
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• 2008

$InGaZnO_4$ based thin film transistors (TFTs) are of interest for large area and low cost electronics. The TFTs have strong potential for application in flat panel displays and portable electronics due to their high field effect mobility, high on/off current ratios, and high optical transparency. The application of such room temperature processed transistors, however, is often limited by the operation voltage and long-tenn stability. Therefore, attaining an optimum thickness is necessary. We investigated the thickness dependence of a room temperature grown $MgO_{0.3}BST_{0.7}$ composite gate dielectric and an $InGaZnO_4$ (IGZO) active semiconductor on the electrical characteristics of thin film transistors fabricated on a polyethylene terephthalate (PET) substrate. The TFT characteristics were changed markedly with variation of the gate dielectric and semiconductor thickness. The optimum gate dielectric and active semiconductor thickness were 300 nm and 30 nm, respectively. The TFT showed low operating voltage of less than 4 V, field effect mobility of 21.34 cm2/$V{\cdot}s$, an on/off ratio of $8.27\times10^6$, threshold voltage of 2.2 V, and a subthreshold swing of 0.42 V/dec.

• 대한기계학회논문집A
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• 제39권7호
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• pp.701-706
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• 2015

본 논문에서는 격자가 있는 광경화성수지와 폴리아세테이트 수지의 레이저 접합해석에 대한 실험적 결과와 컴퓨터시뮬레이션 결과를 비교분석하였다. 3차원 격자형상은 MJM 방식의 3D 프린터를 사용하였고, 접합은 다이오드 레이저를 사용하였다. 5Watt ~ 7Watt 범위에서 경계면에 조사된 레이저는 유리천이온도에 도달 후 상면의 격자사이로 침투되어 기계적인 접합이 이루어졌다. 컴퓨터 시뮬레이션 결 과, 분포 온도를 통해서 열유동방향을 예측할 수 있었으며 분석을 통해서 접합의 원리를 이해할 수 있었다. 접합실험에서 최대 입열조건인 고출력 저속에서의 2scan 접합이 최소 입열조건이 저출력 고속 조건의 4 scan 보다는 훨씬더 효과적인 것으로 나타났고, 일정수준(Threshold) 이상의 최소에너지 즉, 유리천이온도 이상이 되어야만 효과적인 것을 알 수가 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.289.2-289.2
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• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

• 한국지구과학회지
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• 제40권4호
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• pp.406-413
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• 2019

Red-Green-Blue (RGB) imagery techniques are useful for both forecasters and public users because they are intuitively understood, have advantageous visualization, and do not lose observational information. This study presents a novel RGB convective cloud product and its application to tropical cyclone analysis using Communication, Oceanography, and Meteorology (COMS) satellite observations. The RGB convective cloud product was developed using the brightness temperature differences between WV ($6.75{\mu}m$) and IR1 ($10.8{\mu}m$), and IR2 ($12.0{\mu}m$) and IR1 ($10.8{\mu}m$) as well as the brightness temperature in the IR1 bands of the COMS, with the threshold values estimated from the Korea Meteorological Administration (KMA) radar observations and the EUMETSAT RGB recipe. To verify the accuracy of the convective cloud RGB product, the product was applied to the center positions analysis of two typhoons in 2013. Thus, the convective cloud RGB product threshold values were estimated for WV-IR1 (-20 K to 15 K), IR1 (210 K to 300 K), and IR1-IR2 (-4 K to 2 K). The product application in typhoon analysis shows relatively low bias and root mean square errors (RMSE)s of 23 and 28 km for DANAS in 2013, and 17 and 22 km for FRANCISCO in 2013, as compared to the best tracks data from the Regional Specialized Meteorological Center (RSMC) in Tokyo. Consequently, our proposed RGB convective cloud product has the advantages of high accuracy and excellent visualization for a variety of meteorological applications.

• Restorative Dentistry and Endodontics
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• 제39권3호
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• pp.155-163
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• 2014

Objectives: Light-curing of resin-based materials (RBMs) increases the pulp chamber temperature, with detrimental effects on the vital pulp. This in vitro study compared the temperature rise under demineralized human tooth dentin during light-curing and the degrees of conversion (DCs) of three different RBMs using quartz tungsten halogen (QTH) and light-emitting diode (LED) units (LCUs). Materials and Methods: Demineralized and non-demineralized dentin disks were prepared from 120 extracted human mandibular molars. The temperature rise under the dentin disks (n = 12) during the light-curing of three RBMs, i.e. an Ormocer-based composite resin (Ceram. X, Dentsply DeTrey), a low-shrinkage silorane-based composite (Filtek P90, 3M ESPE), and a giomer (Beautifil II, Shofu GmbH), was measured with a K-type thermocouple wire. The DCs of the materials were investigated using Fourier transform infrared spectroscopy. Results: The temperature rise under the demineralized dentin disks was higher than that under the non-demineralized dentin disks during the polymerization of all restorative materials (p < 0.05). Filtek P90 induced higher temperature rise during polymerization than Ceram.X and Beautifil II under demineralized dentin (p < 0.05). The temperature rise under demineralized dentin during Filtek P90 polymerization exceeded the threshold value ($5.5^{\circ}C$), with no significant differences between the DCs of the test materials (p > 0.05). Conclusions: Although there were no significant differences in the DCs, the temperature rise under demineralized dentin disks for the silorane-based composite was higher than that for dimethacrylate-based restorative materials, particularly with QTH LCU.

• Carbon letters
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• 제15권3호
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• pp.214-217
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• 2014

A filtration-taping method was demonstrated to fabricate carbon nanotube (CNT) emitters. This method shows many good features, including high mechanical adhesion, good electrical contact, low temperature, organic-free, low cost, large size, and suitability for various CNT materials and substrates. These good features promise an advanced field emission performance with a turn-on field of $0.88V/{\mu}m$ at a current density of $0.1{\mu}A/cm^2$, a threshold field of $1.98V/{\mu}m$ at a current density of $1mA/cm^2$, and a good stability of over 20 h. The filtration-taping technique is an effective way to realize low-cost, large-size, and high-performance CNT emitters.