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Characteristics of Non-alloyed Mo Ohmic Contacts to Laser Activated p-type SiC

레이저 활성화에 의한 p형 Sic와 비합금 Mo 오믹 접합

  • 이형규 (충북대학교 전기전자컴퓨터공학부 및 컴퓨터정보통신연구소) ;
  • 이창영 (충북대학교 전기전자컴퓨터공학부 및 컴퓨터정보통신연구소) ;
  • 송지헌 (충북대학교 전기전자컴퓨터공학부 및 컴퓨터정보통신연구소) ;
  • 최재승 (충북대학교 전기전자컴퓨터공학부 및 컴퓨터정보통신연구소) ;
  • 이재봉 (충북대학교 전기전자컴퓨터공학부 및 컴퓨터정보통신연구소) ;
  • 김기호 (충북대학교 전기전자컴퓨터공학부 및 컴퓨터정보통신연구소) ;
  • 김영석 (충북대학교 전기전자컴퓨터공학부 및 컴퓨터정보통신연구소) ;
  • 박근형 (충북대학교 전기전자컴퓨터공학부 및 컴퓨터정보통신연구소)
  • Published : 2003.07.01

Abstract

SiC has been an useful material for the high voltage, high temperature, and high frequency devices, however, the required high process temperature to activate the implanted p-type dopants has hindered further developments. In this study, we report, for the first time, on the laser activation of implanted Al and non-alloyed Mo ohmic contacts and its application to MOSFET fabrication. The contact and sheet resistance measured from CTLM patterns have decreased by increasing laser power, and the lowest values are 3.9 $K\Omega$/$\square$ and 1.3 $\times$ 10$^{-3}$ $\Omega$-cm$^2$, respectively, at the power density of 1.45 J/cm$^2$ The n-MOSFETs fabricated on laser activated p-well exhibit well-behaved I-V characteristics and threshold voltage reduction by reverse body voltage. These results prove that the laser process for implant activation is an alternative low temperature technology applicable to SiC devices.

Keywords

References

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