• KSII Transactions on Internet and Information Systems (TIIS)
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• v.14 no.11
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• pp.4395-4412
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• 2020

The multisource image fusion has become an active topic in the last few years owing to its higher segmentation rate. To enhance the accuracy of multimodal pig-body feature segmentation, a multisource image fusion method was employed. Nevertheless, the conventional multisource image fusion methods can not extract superior contrast and abundant details of fused image. To superior segment shape feature and detect temperature feature, a new multisource image fusion method was presented and entitled as NSST-GF-IPCNN. Firstly, the multisource images were resolved into a range of multiscale and multidirectional subbands by Nonsubsampled Shearlet Transform (NSST). Then, to superior describe fine-scale texture and edge information, even-symmetrical Gabor filter and Improved Pulse Coupled Neural Network (IPCNN) were used to fuse low and high-frequency subbands, respectively. Next, the fused coefficients were reconstructed into a fusion image using inverse NSST. Finally, the shape feature was extracted using automatic threshold algorithm and optimized using morphological operation. Nevertheless, the highest temperature of pig-body was gained in view of segmentation results. Experiments revealed that the presented fusion algorithm was able to realize 2.102-4.066% higher average accuracy rate than the traditional algorithms and also enhanced efficiency.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.64-71
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• 2023

In this study, we investigated the effects of BiAlSiO glass composition on its glass forming range, thermal properties, and plasma resistance. The results showed that increasing the Al2O3 content suppressed the tendency for crystallization and hindered glass formation beyond a certain threshold. Bi2O3 was found to increase the content of non-bridging oxygen, resulting in a decrease in glass transition temperature and an increase in thermal expansion coefficient. Furthermore, the etching rate was found to improve with increasing Al2O3 content but decrease with increasing SiO2 content. It was concluded that the boiling point of fluorinated compounds should be considered to 900℃. Therefore, this study is expected to contribute to the understanding of the properties of BiAlSiO glass and its application to low temperature melting PRG compositions.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.302.1-302.1
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• 2016

Solution-processed amorphous metal-oxide thin-film transistors (TFTs) are considered as promising candidates for the upcoming transparent and flexible electronics due to their transparent property, good performance uniformity and possibility to fabricate at a low-temperature. In addition, solution processing metal oxide TFTs may allow non-vacuum fabrication of flexible electronic which can be more utilizable for easy and low-cost fabrication. Recently, for high-mobility oxide TFTs, multi-layered oxide channel devices have been introduced such as superlattice channel structure and heterojunction structure. However, only a few studies have been mentioned on the bias illumination stress in the multi- layered oxide TFTs. Therefore, in this research, we investigated the effects of bias illumination stress in solution-processed bilayer oxide TFTs which are fabricated by the deep ultraviolet photochemical activation process. For studying the electrical and stability characteristics, we implemented positive bias stress (PBS) and negative bias illumination stress (NBIS). Also, we studied the electrical properties such as field-effect mobility, threshold voltage ($V_T$) and subthreshold slop (SS) to understand effects of the bilayer channel structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.151-151
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• 2010

In this paper, the electrically properties of nonvolatile memory (NVM) using multi-stacks gate insulators of oxide-nitride-oxynitride (ONOn) and active layer of the low temperature polycrystalline silicon (LTPS) were investigated. From hydrogenated amorphous silicon (a-Si:H), the LTPS thin films with high crystalline fraction of 96% and low surface's roughness of 1.28 nm were fabricated by the metal induced crystallization (MIC) with annealing conditions of $650^{\circ}C$ for 5 hours on glass substrates. The LTPS thin film transistor (TFT) or the NVM obtains a field effect mobility of ($\mu_{FE}$) $10\;cm^2/V{\cdot}s$, threshold voltage ($V_{TH}$) of -3.5V. The results demonstrated that the NVM has a memory window of 1.6 V with a programming and erasing (P/E) voltage of -14 V and 14 V in 1 ms. Moreover, retention properties of the memory was determined exceed 80% after 10 years. Therefore, the LTPS fabricated by the MIC became a potential material for NVM application which employed for the system integration of the panel display.

• Journal of The Korean Astronomical Society
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• v.43 no.5
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• pp.161-168
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• 2010

Magnetars are neutron stars possessing a magnetic field of about $10^{14}-10^{15}$ G at the surface. Thermodynamic properties of neutron star matter, approximated by pure neutron matter, are considered at finite temperature in strong magnetic fields up to $10^{18}$ G which could be relevant for the inner regions of magnetars. In the model with the Skyrme effective interaction, it is shown that a thermodynamically stable branch of solutions for the spin polarization parameter corresponds to the case when the majority of neutron spins are oriented opposite to the direction of the magnetic field (i.e. negative spin polarization). Moreover, starting from some threshold density, the self-consistent equations have also two other branches of solutions, corresponding to positive spin polarization. The influence of finite temperatures on spin polarization remains moderate in the Skyrme model up to temperatures relevant for protoneutron stars. In particular, the scenario with the metastable state characterized by positive spin polarization, considered at zero temperature in Phys. Rev. C 80, 065801 (2009), is preserved at finite temperatures as well. It is shown that, above certain density, the entropy for various branches of spin polarization in neutron matter with the Skyrme interaction in a strong magnetic field shows the unusual behavior, being larger than that of the nonpolarized state. By providing the corresponding low-temperature analysis, we prove that this unexpected behavior should be related to the dependence of the entropy of a spin polarized state on the effective masses of neutrons with spin up and spin down, and to a certain constraint on them which is violated in the respective density range.

• Korean journal of applied entomology
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• v.52 no.4
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• pp.387-394
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• 2013

The developmental times of mealworm beetle larvae, Tenebrio molitor were studied at six temperatures ranging from 15 to $30^{\circ}C$ with 60~70% RH, and a photoperiod of 14L:10D. Mortality of larval period was very low at 17 and $20^{\circ}C$ but did not die over $22^{\circ}C$. Developmental time of larva was decreased with increasing temperature. The total developmental time of T. molitor larvae was longest at $17^{\circ}C$ (244.3 days) and shortest at $30^{\circ}C$ (110.8 days). Egg and larvae were not developed at $15^{\circ}C$. The lower developmental threshold and effective accumulative temperatures for the total larval stages were $6.0^{\circ}C$ and 2564.1 degree-days, respectively. The relationship between developmental rate and temperature was fitted by a linear model and nonlinear model of Logan-6($r^2$=0.95). The distribution of completion of each development stage was well described by the 2-parameter Weibull function ($r^2$=0.8502~0.9390).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.151-151
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• 2009

Recently, there has been increasing interest in amorphous oxide semiconductors to find alternative materials for an amorphous silicon or organic semiconductor layer as a channel in thin film transistors(TFTs) for transparent electronic devices owing to their high mobility and low photo-sensitivity. The fabriction of amorphous oxide-based TFTs at room temperature on plastic substrates is a key technology to realize transparent flexible electronics. Amorphous oxides allows for controllable conductivity, which permits it to be used both as a transparent semiconductor or conductor, and so to be used both as active and source/drain layers in TFTs. One of the materials that is being responsible for this revolution in the electronics is indium-zinc-tin oxide(IZTO). Since this is relatively new material, it is important to study the properties of room-temperature deposited IZTO thin films and exploration in a possible integration of the material in flexible TFT devices. In this research, we deposited IZTO thin films on polyethylene naphthalate substrate at room temperature by using magnetron sputtering system and investigated their properties. Furthermore, we revealed the fabrication and characteristics of top-gate-type transparent TFTs with IZTO layers, seen in Fig. 1. The experimental results show that by varying the oxygen flow rate during deposition, it can be prepared the IZTO thin films of two-types; One a conductive film that exhibits a resistivity of $2\times10^{-4}$ ohm${\cdot}$cm; the other, semiconductor film with a resistivity of 9 ohm${\cdot}$cm. The TFT devices with IZTO layers are optically transparent in visible region and operate in enhancement mode. The threshold voltage, field effect mobility, on-off current ratio, and sub-threshold slope of the TFT are -0.5 V, $7.2\;cm^2/Vs$, $\sim10^7$ and 0.2 V/decade, respectively. These results will contribute to applications of select TFT to transparent flexible electronics.

• Korean Journal of Food Science and Technology
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• v.32 no.2
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• pp.265-270
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• 2000

White ginseng powder, permitted to be irradiated in Korea for the purpose of microbial decontamination, was treated with electron beam at doses of $0{\sim}15\;kGy$ for a detection trial whether it is irradiated or not by measuring photostimulated luminescence for whole samples first and then (TL) for the mineral adhering to the samples. PSL values were less than threshold value (700, $T_{1}$) and were negative for nonirradiated samples but more than 5000 $(T_2)$ and were positive for irradiated ones. After PSL measurement mineral was separated from the whole samples using density separation. Mineral of nonirradiated samples was characterized by glow curves which have low intensity and were situated at the high temperature region (about $300^{\circ}C$) by the low level of natural radioactivity. Glow curves of minerals for all irradiated samples were observed at about $200^{\circ}C$. TL ratio by normalization was 0.01 for nonirradiated sample and more than 0.78 for irradiated samples, and it was possible to detect whether white ginseng powders were irradiated or not.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.207-211
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• 2002

Band gap tuning by quantum well disordering in $In_{0.53}Ga_{0.47}As/InGaAsP(Q1.25)$ quantum well structure has been investigated using photoluminescence. The threshold temperature for the blue shift was about $750^{\circ}C$ , and the blue shift became larger as the annealing temperature increased. $SiO_2$ showed saturation as the annealing temperature increased. $SiN_x$caused larger blue shift than $SiO_2$, which is considered to be related to the low growth temperature of $SiN_x$. The diffusion of P and Ga are thought to be responsible for the blue shift of the $SiN_x$ and $SiO_2$capped quantum well disordering , respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.106-106
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• 2011

Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.