• 청정기술
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• 제2권1호
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• pp.60-68
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• 1996

고정층 반응기에서 망간광석을 이용하여 저농도의 일산화탄소 산화제어반응에 대하여 고찰하였다. 고려된 실험변수는 일산화탄소 농도 (500ppm~10000ppm), 산소 농도(500ppm~99.8%)와 촉매의 온도($50{\sim}750^{\circ}C$)이다. 또한 망간광석의 특성은 Thermogravimetric Analysis(TGA), 일산화탄소에 의한 환원, Temperature Programmed Reduction(TPR)실험을 이용하여 규명하였다. 망간광석의 일산화탄소 산화력은 순수이산화망간에 비해서 단위 면적당 높은 산화력과 $750^{\circ}C$까지 가열된 후에도 산화력이 유지될 수 있는 안정된 촉매작용을 보였다. Temperature Programmed Desorption(TPD), TPR 실험과 TG 등의 분석결과 산소의 농도가 낮거나 무산소하에서 망간광석의 격자내 산소가 쉽게 제공될 수 있음을 알 수 있었다. 일산화탄소의 농도가 500~3500ppm일 때 일산화탄소의 반응차수는 0.701이며 3500~10000ppm구간에서 일산화탄소의 농도에 무관한 0차 반응이었다.

• 열처리공학회지
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• 제35권5호
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• pp.246-254
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• 2022

The high-temperature oxidation behavior of Cr-Mo steel AISI 4115 in air at different temperatures (600, 850, 950℃) for 120 min was studied by mass gain analysis, phase analysis (optical microscopy, electron probe micro-analysis, x-ray diffraction) and hardness measurement of each iron oxide-phase. The oxidation scales that formed on oxidation process consisted outer layer (Hematite), middle layer (Magnetite) and the inner layer (Chromite). In the case of 850 and 950℃, the oxidation mass gain per unit area of AISI 4115 steel increased according to the logarithmic rate as atmospheric pressure increased. Especially, It has been observed that with an increase in the atmospheric pressure at 600℃, the oxidation mass gain per unit area changed from a linear to logarithmic relationship.

• 한국표면공학회지
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• 제48권5호
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• pp.218-226
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• 2015

The goal of this study is to investigate a metal cladding that contains SiC composites as a protective layer and analysis the characteristics of the specimens on high temperature oxidation To make SiC composites, the current process needs a high temperature (about $1100^{\circ}C$) for the infiltration of fixing materials such as SiC. To improve this situation, we need a low temperature process. In this study, we developed a low temperature process for making SiC composites on the metal layer, and we have made two kinds: cladding with protective SiC composites made by polycarbosilane(PCS), and a PCS filling method using supercritical carbon dioxide. A corrosion test at $1200^{\circ}C$ in a mixed steam and Ar atmosphere was performed on these specimens. The result show that the cladding with protective SiC composites have excellent oxidation suprression rates. This study can be said to have developed new metal cladding with enhanced durability by using SiC composite as protective films of metal cladding instead of simple coating film.

• 한국지하수토양환경학회지:지하수토양환경
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• 제17권2호
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• pp.7-14
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• 2012

Batch tests were carried out to evaluate the thermal treatment of low volatile organic compounds in low-permeability soil. The chemical oxidation by sodium persulfate catalyzed by heat and Fe (II) was evaluated. Enhanced persulfate oxidation of n-decane (C-10), n-dodecane (C-12), n-tetradecane (C-14), n-hexadecane (C-16), and phenanthrene was observed with thermal catalyst, indicating increased sulfate radical production. Slight enhancement of the pollutants oxidation was observed when initial sodium persulfate concentration increased from 5 to 50 g/L. However, the removal efficiency greatly decreased as soil/water ratio increased. It indicates that mass transfer of the pollutants as well as the contact between the pollutants and sulfate radical were inhibited in the presence of solids. In addition, more pollutants can be adsorbed on soil particles and soil oxidant demand increased when soil/water ratio becomes higher. The oxidation of the pollutants was significantly improved when catalyzed by Fe(II). The sodium persulfate consumption increased at the same time because the residual Fe(II) acts as the sulfate radical scavenger.

• 한국세라믹학회지
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• 제29권6호
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• pp.419-430
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• 1992

Fabrication possibility of low-shrinkage alumina without oxidation and wetting agent was presented on the basis of observation about oxidation behavior, microstructure and physical characteristics of such reaction agents free Al2O3-Al system. The composition less than Al 10w/o where Al can act as a sintering agent for Al2O3 was excluded. Under the condition of present experiments oxidation of Al2O3-Al system was dependent not on holding time but mainly on oxidation temperature. In thes case of Al powder not comminuted effectively during powder mixing of Al2O3-Al, columnar structure which would act as a hindrance to the densification during sintering developed more during oxidation with higher Al contents, and which made the fabrication of low-shrinkage Al2O3 ceramics impossible. If Al powder was comminuted effectively due to co-mixed Al2O3 characteristics, densification was improved because of no columnar structure and made the fabrication of sintered body with -2.7% dimensional change and 81% relative density possible. As a result, it is possible to fabricate dense low-shrinkage Al2O3 ceramics without oxidation and wetting agent under conditions such as smaller particle size of Al, Al contents below 50v/o, higher green density of Al2O3-Al compact and the use of Al2O3 powder used for high-density ceramics.

• 한국세라믹학회지
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• 제34권10호
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• pp.1045-1052
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• 1997

Barium ferrites (BaFe12O19) were synthesized at the various temperature by the coprecipitation-oxidation method. X-ray diffraction Rietveld analysis for barium ferrites were performed, their microstructures were observed and their magnetic properties were measured, in order to analyze the crystal structures and determine the optimal temperature of heat-treatment. The barium ferrite, its average particle size 80 nm, was formed at 600℃ through the hematite (α-Fe2O3), but the site occupations of the Fe's in tetrahedral and bipyramidal sites and of the Ba relatively low. Increasing the heating temperature, these occupations and the magnetization increased, and the crystal c-axis decreased. These changes were very small at the heat treatment of above 800℃, but the particles were rapidly grown. It is suggested that the optimal temperature of heat-treatment is 800℃, at which temperature crystal structure is relatively stable and the particles hardly ever grow.

• 공업화학
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• 제25권3호
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• pp.237-241
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• 2014

벤젠은 발암성을 가진 유해성 대기 오염물질로 특별한 관리가 필요하다. 특히 벤젠은 실외 뿐만 아니라 실내에서도 존재하기 때문에 실내외를 구분하여 적절한 처리 방법이 요구된다. 실외의 공정에서 배출되는 VOC는 촉매 산화법을 통하여 $300-400^{\circ}C$에서 제거하는 것이 바람직하지만, 실내의 경우는 $100^{\circ}C$ 이하 혹은 실온에서 제거되는 것이 바람직하다. 본 총설은 촉매산화법, 촉매오존산화법 등 다양한 촉매 벤젠 산화법의 최근 동향을 다루고 있으며, 특히 저온산화반응을 위해 Mn 기반 촉매에 중점을 두고 조사하였다. Mn 기반 촉매는 다른 귀금속 촉매에 비하여 경제적으로 매우 이로우며, 특히 다양한 제조법을 적용하여 보다 효율적인 Mn 기반 벤젠 제거 촉매가 개발되고 있다. 또한 오존을 이용하여 $100^{\circ}C$ 이하, 특히 상온에서도 효율적으로 벤젠을 제거할 수 있기 때문에, Mn 기반 촉매의 효율성은 더욱더 증가할 것으로 판단된다.

• Korean Chemical Engineering Research
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• 제56권5호
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• pp.752-760
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• 2018

경유자동차에서 배출되는 탄소 입자상 물질 연소 온도구간을 낮추는 것은 미세먼지 배출 저감과 내연기관 자동차의 고연비 저배출 성능 구현이라는 측면에서 매우 중요한 기술적 과제 중 하나이다. 본 논문에서는 탄소 입자상 물질의 산화를 위해 오존을 산화제로 이용하고 백금계 산화촉매를 동시에 적용했을 때 관찰되는 $150^{\circ}C$ 부근 저온영역에서의 탄소 입자상 물질 연소반응에 관하여 논했다. 백금계 산화촉매를 적용했을 때 오존에 의한 탄소 입자상 물질의 산화속도를 크게 개선시키지 못했지만 연소반응의 이산화탄소 선택도를 향상시켰으며, 탄소 입자상 물질의 선택적 산화를 위해 고려된 NO의 $NO_2$로의 사전 전환($NO_2$-rich 조건)은 $NO_2$와 오존의 상호 상승작용에 의해 $150^{\circ}C$ 부근 온도영역에서의 탄소상 입자물질 연소성능을 높이는데 효과가 있었다.

• 한국결정성장학회지
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• 제30권5호
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• pp.200-207
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• 2020

SHS 법으로 MoSi₂ 분말, (Mo_1/2W_1/2)Si₂ 분말 및 WSi₂ 분말을 합성하고 이 분말들을 500℃, 1,000℃, 1,200℃, 1,300℃, 1,400℃, 1,500℃ 및 1,600℃에서 열처리한 다음, 결정구조 및 열중량 변화 등을 관찰하였다. Mo-W-Si계의 silicide 분말은 500℃의 저온에서도 산화 반응이 일어나며, 저온 산화 및 분해로 생성되는 결정상은 MoO₃이었다. 1,200℃ 이상에서 열처리를 한 경우에 분해반응으로 생성된 SiO₂의 결정상은 상온에서 흔히 관찰되는 α-quartz가 아닌 α-cristobalite 상으로 생성되었다. W이 포함되면 저온과 고온에서 분해 반응이 더 많이 일어나는 것으로 나타났으며, 분말을 성형하여 소결한 시편의 경우에 MoSi₂와 (Mo_1/2W_1/2)Si₂는 저온이나 고온에서 1시간 열처리를 하더라도 저온산화에 의한 분해와 그에 따른 질량 변화 반응을 관찰하기 어려웠지만 WSi₂는 저온 산화에 의하여 소결 자체가 어려웠다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.