• Clean Technology
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• v.2 no.1
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• pp.60-68
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• 1996

The oxidation of carbon monoxide of low concentration on the natural manganese dioxide (NMD) has been investigated in a fixed bed reactor. The experimental variables were concentration of oxygen (500ppm~99.8%) and carbon monoxide (500ppm~10000ppm) and catalyst temperature ($50{\sim}750^{\circ}C$). The NMD(Natural Manganese Dioxide) has been characterized by temperature - program reduction(TPR) using 2.4% $CO/H_2$ as a reducing agent, thermogravimetric analysis (TGA), and reduction of NMD by 2.4% $CO/H_2$. It was found that the NMD catalyst activity on the unit area was greater than the $MnO_2$ catalyst for oxidation of CO at the same temperature. The thermal stability of oxidation activity was considered to be maintained when the NMD was heated to $750^{\circ}C$. The TGA, reduction by CO, and TPR of the NMD showed that the NMD had active lattice oxygen which was easily liberated on heating in the absence and low concentration of oxygen. The reaction order in CO is 0.701 between 500~3500ppm and almost zero between 3500~10000ppm of CO.

• Journal of the Korean Society for Heat Treatment
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• v.35 no.5
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• pp.246-254
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• 2022

The high-temperature oxidation behavior of Cr-Mo steel AISI 4115 in air at different temperatures (600, 850, 950℃) for 120 min was studied by mass gain analysis, phase analysis (optical microscopy, electron probe micro-analysis, x-ray diffraction) and hardness measurement of each iron oxide-phase. The oxidation scales that formed on oxidation process consisted outer layer (Hematite), middle layer (Magnetite) and the inner layer (Chromite). In the case of 850 and 950℃, the oxidation mass gain per unit area of AISI 4115 steel increased according to the logarithmic rate as atmospheric pressure increased. Especially, It has been observed that with an increase in the atmospheric pressure at 600℃, the oxidation mass gain per unit area changed from a linear to logarithmic relationship.

• Journal of the Korean institute of surface engineering
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• v.48 no.5
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• pp.218-226
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• 2015

The goal of this study is to investigate a metal cladding that contains SiC composites as a protective layer and analysis the characteristics of the specimens on high temperature oxidation To make SiC composites, the current process needs a high temperature (about $1100^{\circ}C$) for the infiltration of fixing materials such as SiC. To improve this situation, we need a low temperature process. In this study, we developed a low temperature process for making SiC composites on the metal layer, and we have made two kinds: cladding with protective SiC composites made by polycarbosilane(PCS), and a PCS filling method using supercritical carbon dioxide. A corrosion test at $1200^{\circ}C$ in a mixed steam and Ar atmosphere was performed on these specimens. The result show that the cladding with protective SiC composites have excellent oxidation suprression rates. This study can be said to have developed new metal cladding with enhanced durability by using SiC composite as protective films of metal cladding instead of simple coating film.

• Journal of Soil and Groundwater Environment
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• v.17 no.2
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• pp.7-14
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• 2012

Batch tests were carried out to evaluate the thermal treatment of low volatile organic compounds in low-permeability soil. The chemical oxidation by sodium persulfate catalyzed by heat and Fe (II) was evaluated. Enhanced persulfate oxidation of n-decane (C-10), n-dodecane (C-12), n-tetradecane (C-14), n-hexadecane (C-16), and phenanthrene was observed with thermal catalyst, indicating increased sulfate radical production. Slight enhancement of the pollutants oxidation was observed when initial sodium persulfate concentration increased from 5 to 50 g/L. However, the removal efficiency greatly decreased as soil/water ratio increased. It indicates that mass transfer of the pollutants as well as the contact between the pollutants and sulfate radical were inhibited in the presence of solids. In addition, more pollutants can be adsorbed on soil particles and soil oxidant demand increased when soil/water ratio becomes higher. The oxidation of the pollutants was significantly improved when catalyzed by Fe(II). The sodium persulfate consumption increased at the same time because the residual Fe(II) acts as the sulfate radical scavenger.

• Journal of the Korean Ceramic Society
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• v.29 no.6
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• pp.419-430
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• 1992

Fabrication possibility of low-shrinkage alumina without oxidation and wetting agent was presented on the basis of observation about oxidation behavior, microstructure and physical characteristics of such reaction agents free Al2O3-Al system. The composition less than Al 10w/o where Al can act as a sintering agent for Al2O3 was excluded. Under the condition of present experiments oxidation of Al2O3-Al system was dependent not on holding time but mainly on oxidation temperature. In thes case of Al powder not comminuted effectively during powder mixing of Al2O3-Al, columnar structure which would act as a hindrance to the densification during sintering developed more during oxidation with higher Al contents, and which made the fabrication of low-shrinkage Al2O3 ceramics impossible. If Al powder was comminuted effectively due to co-mixed Al2O3 characteristics, densification was improved because of no columnar structure and made the fabrication of sintered body with -2.7% dimensional change and 81% relative density possible. As a result, it is possible to fabricate dense low-shrinkage Al2O3 ceramics without oxidation and wetting agent under conditions such as smaller particle size of Al, Al contents below 50v/o, higher green density of Al2O3-Al compact and the use of Al2O3 powder used for high-density ceramics.

• Journal of the Korean Ceramic Society
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• v.34 no.10
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• pp.1045-1052
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• 1997

Barium ferrites (BaFe12O19) were synthesized at the various temperature by the coprecipitation-oxidation method. X-ray diffraction Rietveld analysis for barium ferrites were performed, their microstructures were observed and their magnetic properties were measured, in order to analyze the crystal structures and determine the optimal temperature of heat-treatment. The barium ferrite, its average particle size 80 nm, was formed at 600℃ through the hematite (α-Fe2O3), but the site occupations of the Fe's in tetrahedral and bipyramidal sites and of the Ba relatively low. Increasing the heating temperature, these occupations and the magnetization increased, and the crystal c-axis decreased. These changes were very small at the heat treatment of above 800℃, but the particles were rapidly grown. It is suggested that the optimal temperature of heat-treatment is 800℃, at which temperature crystal structure is relatively stable and the particles hardly ever grow.

• Applied Chemistry for Engineering
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• v.25 no.3
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• pp.237-241
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• 2014

Benzene is a hazardous air pollutant, classified as carcinogenic to humans, that requires special management. Benzene exists both indoors and outdoors and the control measure of indoor benzene is different from that of outdoor benzene. The removal of indoor benzene needs to be accomplished at low temperatures (normally below $100^{\circ}C$), while outdoor benzene is usually removed at much higher temperature ($300-400^{\circ}C$) by using catalytic oxidation. This review paper summarizes the recent trend in catalytic treatment of airborne benzene, focusing on catalytic oxidation and catalytic ozone oxidation. Particular attention is paid to Mn-based catalysts for low-temperature oxidation of benzene, which are more economical than the other noble-metal catalysts. Various methods are used to generate more efficient Mn-based catalysts for benzene removal. Ozone oxidation is attracting particularly significant attention because it can remove benzene effectively below $100^{\circ}C$, even at room temperature.

• Korean Chemical Engineering Research
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• v.56 no.5
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• pp.752-760
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• 2018

The lowering of temperature for combustion of diesel particulate matters (or diesel soot) is one of the important tasks in automotive industry that is searching for a way to meet up "high-fuel efficiency, low-emission" standard. In this study, it was discussed how the use of ozone over platinum-based catalyst promotes a low-temperature soot oxidation occurred at $150^{\circ}C$. The use of platinum catalyst did not increase oxidation rate largely but was very effective in improving the selectivity of carbon dioxide. The pre-oxidation of NO into $NO_2$ using ozone was rather crucial in improving the oxidation rate of soot at $150^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.5
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• pp.200-207
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• 2020

MoSi₂, (Mo_1/2W_1/2)Si₂, and WSi₂ powders were synthesized by self-propagating high-temperature synthesis (SHS) method. The synthesized powders were heat-treated at 500, 1,000, 1,200, 1,300, 1,400, 1,500 and 1,600℃ in ambient atmosphere. Oxidation of Mo-W silicide powder was found at low temperature of 500℃. XRD structure analysis and DTA/TG data showed that MoO₃ was formed with 500℃ heat treatment for 1 hour, and that it was α-cristobalite phase that was formed with 1200℃ heat treatment, not α-quartz phase which is commonly found and stable at room temperature. Existence of W accelerated decomposition at both low and high temperature. Fully sintered MoSi₂ and (Mo_1/2W_1/2)Si₂ specimen did not show decomposition or weight loss by oxidation, with 1 hour heat treatment at either low or high temperature. Notably, it was difficult to sinter WSi₂ because of oxidation reaction at low temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.