• 전자공학회논문지 IE
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• v.43 no.2
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• pp.11-15
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• 2006

In this paper characteristics of polycrystalline silicon crystallized by excimer laser on plastic substrate under 150$^{\circ}C$ is investigated. Amorphous silicon is deposited by rf-magnetron sputter in atmosphere of Ar and He for preventing depletion effect by dehydrogenation as deposition by PECVD. After annealing by 308 nm, 30 Hz, double pulse type XeCl excimer laser, p-chnnel low temperature polycrystalline silicon TFT which maximum mobility is $64cm^2/V{\cdot}s$ at $344mJ/cm^2$ is fabricate.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.13-17
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• 2009

we have studied characterization of microbolometer based on the co-sputtered silicon-antimony ($Si_{1-x}Sb_x$) thin film for infrared microbolometer. We have investigated the resistivity and the temperature coefficient of resistance (TCR) with annealing. We deposited the films using co-sputtering method at $200^{\circ}C$ in the Ar environment. The Sb concentration has been adjusted by applying variable DC power from Sb targets. TCR of deposited $Si_{1-x}Sb_x$ films have been measured the range of -2.3~-2.8%/K. The resistivity of the film is low but TCR is higher than the other bolometer materials. Resistivity of the films has not been affected hugely according to the low annealing temperature however the resistivity has been dramatically decreased over $250^{\circ}C$. It is caused of a phase change due to the rearrangement of Si and Sb atoms during crystallization process of the films.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.124-124
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• 2011

This study investigated the interaction of varied plasma power with ultralow-k toluene-tetraethoxysilane (TEOS) hybrid plasma polymer thin films, as well as changing electrical and mechanical properties. The hybrid thin films were deposited on silicon(100) substrates by plasma enhanced chemical vapor deposition (PECVD) system. Toluene and tetraethoxysilane were utilized as organic and inorganic precursors. In order to compare the electrical and the mechanical properties, we grew the hybrid thin films under various conditions such as rf power of plasma, bubbling ratio of TEOS to toluene, and post annealing temperature. The hybrid plasma polymer thin films were characterized by Fourier transform infrared (FT-IR) spectroscopy, atomic force microscopy (AFM), nanoindenter, I-V curves, and capacitance. Also, the hybrid thin films were analyzed by using ellipsometry. The refractive indices varied with the RF power, the bubbling ratio of TEOS to toluene, and the annealing temperature. To analyze their trends of electrical and mechanical properties, the thin films were grown under conditions of various rf powers. The IR spectra showed them to have completely different chemical functionalities from the liquid toluene and TEOS precursors. Also, The SiO peak intensity increased with increasing TEOS bubbling ratio, and the -OH and the CO peak intensities decreased with increasing annealing temperature. The AFM images showed changing of surface roughness that depended on different deposition rf powers. An nanoindenter was used to measure the hardness and Young' modulus and showed that both these values increased as the deposition RF power increased; these values also changed with the bubbling ratio of TEOS to toluene and with the annealing temperature. From the field emission scanning electron microscopy (FE-SEM) results, the thickness of the thin films was determined before and after the annealing, with the thickness shrinkage (%) being measured by using SEM cross-sectional images.

• Journal of the Korean Magnetics Society
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• v.26 no.1
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• pp.7-12
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• 2016

Effects of annealing of the gas-atomized Fe-9%Si-2%Cr powder which is suitable for high frequency application in mobile devices because of its high electrical resistivity were studied with an emphasis on the order-disorder phase transition. The formation of B2 ordered phase could not be suppressed during atomization process. When the powder was annealed at a temperature higher than $550^{\circ}C$ the peak diffracted from $DO_3$ phase could be detected. With increasing annealing temperature lattice parameter and coercivity decreased. An interesting phenomenon was an abrupt increment of coercivity in the powder annealed at $450^{\circ}C$. Highest permeability could be shown in the powder annealed at a relative low temperature of $150^{\circ}C$ and then the permeability decreased with annealing temperature. The above-mentioned results could be successfully explained by both the formation of $DO_3$ ordered phases and the change of electrical resistivity of the Fe-Si-Cr powder which was also originated from the phase transition.

• Polymer(Korea)
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• v.37 no.6
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• pp.711-716
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• 2013

The effect of chain orientation and relaxation on the characteristics of poly(ethylene naphthalate) (PEN) flexible substrate has been studied. It was found that the coefficient of thermal expansion (CTE) of PEN under $100^{\circ}C$ decreased as low as $20ppm/^{\circ}C$ due to the lowering of chain mobility by chain orientation. The thermal shrinkage was found to appear near glass transition temperature because of chain relaxation. It could be minimized by thermal annealing but CTE increased again up to $70ppm/^{\circ}C$ which was 65% of intrinsic CTE of PEN. Unstrained thermal annealing made possible to avoid the thermal shrinkage with maintaining low CTE obtained by chain orientation. Chain orientation did not affect the optical transmittance; however, thermal annealing caused the decrease of optical transmittance up to 5%. This was understood by the minor crystallization due to the thermal annealing near glass transition temperature.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.189.1-189
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• 2000

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.167-169
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• 2009

We have carried out quantitative structure and property analysis of the nanoporous structures of low dielectric constant (low-k) carbon-doped silicon oxide (SiCOH) films, which were deposited with plasma enhanced chemical vapor deposition (PECVD) using vinyltrimethylsilane (VTMS), divinyldimethylsilane (DVDMS), and tetravinylsilane (TVS) as precursor and oxygen as an oxidant gas. We found that the SiCOH film using VTMS only showed well defined spherical nanopores within the film after thermal annealing at $450^{\circ}C$ for 4 h. The average pore radius of the generated nanopores within VTMS SiCOH film was 1.21 nm with narrow size distribution of 0.2. It was noted that thermally labile $C_{x}H_{y}$ phase and Si-$CH_3$ was removed to make nanopore within the film by thermal annealing. Consequently, this induced that decrease of average electron density from 387 to $321\;nm^{-3}$ with increasing annealing temperature up to $450^{\circ}C$ and taking a longer annealing time up to 4 h. However, the other SiCOH films showed featureless scattering profiles irrespective of annealing conditions and the decreases of electron density were smaller than VTMS SiCOH film. Because, with more vinyl groups are introduced in original precursor molecule, films contain more organic phase with less volatile characteristic due to the crosslinking of vinyl groups. Collectively, the presenting findings show that the organosilane containing vinyl group was quite effective to deposit SiCOH/$C_{x}H_{y}$ dual phase films, and post annealing has an important role on generation of pores with the SiCOH film.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.343-347
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• 2007

Fe thin films exhibited (100) preferential orientation when they were deposited at low deposition rate of $0.1{\AA}/s$ on glass substrates by using facing target sputtering system. The (100) oriented Fe layer induces (100) orientation of Pt layer deposited on it owing to hetero-epitaxial growth. After annealing at $600^{\circ}C$ in $H_2$ atmosphere, FePt films exhibited f.c.t. (001) texture in the whole film caused by inter-diffusion between atoms. We have also confirmed that the homogeneously inter-diffused compositional modulation in the film after the annealing process. Furthermore, annealing process in $Ar+H_2$ atmosphere at $400^{\circ}C$ during Pt deposition was effective for attaining Pt (100) texture. The annealing process during Pt deposition also induced in low annealing temperature and decreased annealing time for attaining the FePt f.c.t. (001) structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.28-28
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• 2010

This study realized low-temperature crystallization process of the $Ba_{0.6}Sr_{0.4}TiO_3$ (BST) thin films without thermal damage of substrate using excimer laser annealing (ELA) and structural and electrical characteristics were investigated. The amorphous BST thin films were prepared on Pt/Ti/$SiO_2$/Si substrate by sol-gel method at $250^{\circ}C$. The ELA was carried out using KrF excimer laser which provided excitation wavelength of 248 nm. The beam homogenizing system was used in order to homogenize beam shape of Gaussian fit. The XRD and SEM were used to analyze structural characteristics and the microwave capacitance, dielectric loss and tunability of the BST films were measured by a symmetrical stripline resonator method with shorted end. Consequently, the crystallinity of BST thin films were improved after ELA process and RF tunable capacitor was demonstrated at low temperature below $300^{\circ}C$.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.10a
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• pp.138-141
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• 2008

The effects of annealing temperature and time on mechanical properties and microstructures were investigated in cold drawn pearlitic steel wires. During annealing, the increment of the tensile strength at low temperatures found to be due to age hardening, while the decrease in the tensile strength at high temperatures was attributed to age softening, involving the spheroidization of lamellar cementite and recovery of lamellar ferrite. Since tensile strength and the occurrence of the delamination would be closely related to the dissolution of cementite, the lower annealing temperature and the increase of drawing strain caused the higher tensile strength and the easier occurrence of the delamination in cold drawn pearlitic steel wires.