• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.907-909
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• 2009

Low voltage operated top gated polymer transistors were fabricated with a high permittivity polymer, P(VDF-TrFE) and F8T2 as a gate dielectric and semiconducting layer, respectively. The operating voltage of transistors was effectively reduced under -10 V and typical threshold voltages were as low as -1 ~ -4 V with the reasonable charge carrier mobility of $10^{-3}cm^2$/Vs for the amorphous polymer. The large hysteresis in transfer curve was improved effectively by annealing at low temperature.

• Journal of the Korean Society of Safety
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• v.38 no.5
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• pp.1-7
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• 2023

This study analyzes the operational characteristics of 311 aged and non-aged residual current circuit breakers (RCCBs) in low-voltage consumer contexts. It investigates the influence of external temperature and harmonics based on the rated current multiples. To simulate temperature variations, a convectional oven was used around the circuit breakers. Additionally, the generation of harmonic reference signals and data measurement for overcurrent experiments were conducted using NI SCXI, myDAQ, and LabVIEW. An observation revealed that as the ambient temperature increased, the operating time of RCCBs decreased in the time delay region. This was attributed to the faster response or bending of the bimetal, which is the tripping element. However, aged RCCBs encountered challenges with tripping outside the protective curve. The operating time of the circuit breakers exhibited an acceleration influenced by the order and content of harmonic currents, potentially leading to malfunctions. Aged RCCBs demonstrated faster operating times than their non-aged counterparts. However, the difference in operating time varied based on the manufacturer's and operating environment of the RCCBs. Frequent malfunctions of RCCBs can result in power outages. In cases where these circuit breakers fail to operate, they can lead to secondary damages, including electrical fires and shocks. Consequently, it is imperative to consider the operating environment of RCCBs and provide appropriate replacement cycles to mitigate these risks.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.187-192
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• 2012

Development of new efficient, high voltage switching devices with wide safe operating area and low on-state losses has received considerable attention in recent years. One of those structures with a very effective geometrical design is the trench gate Insulated Gate Bipolar Transistor(IGBT).power IGBT devices are optimized for high-voltage low-power design, decided to aim. Class 1,200 V NPT Planer IGBT, 1,200 V NPT Trench IGBT for class has been studied.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.563-566
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• 2004

We have studied a electrically controlled birefringence (ECB) mode for field sequential liquid crystal display (FSLCD). We measured response time of the ECB mode. The ECB mode exhibiting fast response time, high transmittance, low operating voltage and adequate viewing angle. The positive liquid crystal (LC) is better than negative LC on dielectric anisotropy, birefringence and rotational viscosity. So that, the ECB mode is one of strongest candidate for FSLCD application.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.6
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• pp.951-957
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• 1994

We present a new model for the series resistance of inverted-staggered amorphous silicon (a-Si) thin film transistors (TFT's) by employing the current spreading under the source and the drain contacts as well as the space charge limited current model. The calculated results based on our model have been in good agreements with the measured data over a wide range of applied voltage, gate-to-source and gate-to-drain overlap length, channel length, and operating temperature. Our model shows that the contribution of the series resistances to the current-voltage (I-V) characteristics of the a-Si TFT in the linear regime is more significant at low drain and high gate voltages, for short channel and small overlap length, and at low operating temperature, which have been verified successfully by the experimental measurements.

• Electrical & Electronic Materials
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• v.20 no.5
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• pp.3-11
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• 2007

• Journal of the Korean Electrochemical Society
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• v.26 no.4
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• pp.56-63
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• 2023

The development of renewable energy technologies, such as solar, wave, and wind power, has led to the diversification of water electrolysis technologies, which can be easily coupled with renewable energy sources in terms of economics and scale. Water electrolysis technologies can be classified into three types based on operating temperature: low-temperature (<100 ℃), medium-temperature (300-700 ℃), and high-temperature (>700 ℃). It can also be classified by the type of electrolyte membrane used in the system. However, the concepts of thermodynamic and thermo-neutral voltages calculations and are very important factors in the evaluation of energy consumption and efficiency of water electrolysis technologies, are often confused. This review aims to contribute to a better understanding of the calculation of operating voltage and efficiency of PEM water electrolysis technologies and to clarify the differences between thermodynamic voltage and thermo-neutral voltage.

• Journal of Power Electronics
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• v.18 no.5
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• pp.1303-1314
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• 2018

To match the dynamic lower voltage of a fuel cell stack and the required constant higher voltage (400V) of a DC bus, an H-type structural Boost three-level DC-DC converter with a wide voltage-gain range (HS-BTL) is presented in this paper. When compared with the traditional flying-capacitor Boost three-level DC-DC converter, the proposed converter can obtain a higher voltage-gain and does not require a complicate control for the flying-capacitor voltage balance. Moreover, the proposed converter, which can draw a continuous and low-rippled current from an input source, has the advantages of a wide voltage-gain range and low voltage stress for power semiconductors. The operating principle, parameters design and a comparison with other converters are presented and analyzed. Experimental results are also given to verify the aforementioned characteristics and theoretical analysis. The proposed converter is suitable for application of fuel cell systems.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.4
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• pp.251-265
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• 2001

As the device scaling proceeds, the operating voltage(VDD) of giga-bit DRAMs is expected to be reduced to 1.5V or down, fir improving the device reliability and reducing the power dissipation. Therefore the low-voltage circuit design techniques are required to implement giga-bit DRAMs. In this work, state-of-art low-voltage DRAM circuit techniques are reviewed, and four kinds of low-voltage circuit design techniques are newly proposed for giga-bit DRAMs. Measurement results of test chips and SPICE simulation results are presented for the newly proposed circuit design techniques, which include a hierarchical negative-voltage word-line driver with reduced subthreshold leakage current, a two-phase VBB(Back-Bias Voltage) generator, a two-phase VPP(Boosted Voltage) generator and a bandgap reference voltage generator.

• Korean Journal of Materials Research
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• v.32 no.9
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• pp.384-390
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• 2022

A spin coating process for RRAM, which is a TiN/TiO₂/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (V_O), a major factor of the conductive filament. It was carried out at 100 ℃ under moisture removal conditions and at 300 ℃ and 500 ℃ for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti³⁺ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 ℃ showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 10⁴. The double-logarithmic plot of the I-V curve confirmed the device at 100 ℃ required a low operating voltage. As a result, the 100 ℃ heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO₂/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.