• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.80-84
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• 1993

In this research, we studied the variation of the dielectric loss absorption of the dielectric loss absorption of the sample according with the change to $\^$60/Co-${\gamma}$-ray irradiation dose of the influence of temperature and applied voltage. In order to investigate the effect of irradiation oriented polypropylene film, we have observed dissipation factor within the temperature range of 30∼130 [$^{\circ}C$] and voltage range of 100∼250$^{\circ}C$ [V]. As for the dependency of temperature by dissipation factor, the ${\alpha}$-peak which appears at high temperature increases accordingly to the increasement of irradiation dose which is contributed by the crystal region and moves towards the high temperature. The ${\beta}$-peak which appears at low temperature is origined from dipoles and molecular motions in the amorphous region. As for the dependency of voltage by tan$\delta$, at low temperature the peak of the tan$\delta$, at low temperature the peak of the tan$\delta$ shifts accordingly to the increasement of irradiation dose towards the high temperature region.

• 대한전자공학회논문지SD
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• 제41권8호
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• pp.37-44
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• 2004

본 논문에서는 RF 부품 수동소자 중 가장 기본적인 요소가 되는 전송선로를 DAML(Dtelectric-supported Airbridge Microstrip Line) 형태의 새로운 구조로 제안하였으며, DAMS(Micro Electro Mechanical System) 기술 중 표면 마이크로머싱닝(surface micromachining) 기법을 이용하여 구현하였다. 제안된 구조는 마이크로스트립 라인(microstrip line)의 응용 형태로서 기존의 신호선(signal line)과 ground 사이에 유전체 지지대(dielectric post)를 사용하였고, 신호선을 공중으로 띄우면서 넓은 범위의 임피던스에서 유전체 손실(dielectric loss)을 최소화하였다. 본 논문에서 제작된 전송선로는 10 ㎛의 신호선의 높이와 10 ㎛ × 10 ㎛의 지지대(Post) 면적과 9 ㎛의 지지대(post)의 높이와 5 mm의 길이로 제작되었다. 50 GHz에서 일반적인 마이크로스티립(microstrip) 전송선의 손실이 약 7.5 dB/cm 이상 되는 것과 비교하여 본 논문에서 제안한 구조에서는 50 GHz에서 전송선의 손실이 약 1.1 dB/cm가 되는 것을 얻었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.191-194
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• 1999

Recently, with the rapid development and demand for compactness of portable communications, the requirement for compact and low-cost filter is increasing. One of the methods for reducing size and cost is to use high dielectric constant and low loss dielectric material in filter. The other is new monoblock dielectric band-pass filter (BPF) which has holes in a single dielectric body without additional coupling elements. This structure effectively reduces the size and cost of the filters. For previous conventional coaxial type dielectric BPF, dielectric substrates were used for coupling between adjacent resonators and additional input and output ports were needed. Coupling between adjacent resonators of monoblock BPF can be otained via electrode pairs. Capacitances of electrode pair structure for coupling are intensively investigated by 3-D FEM. The BPF for PCS has been designed to have a 30 MHz pass-bandwidth with center frequency of 1855 MHz and an attenuation pole at below the passband using a commercial 3-D structure simulator.

• Elastomers and Composites
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• 제32권5호
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• pp.309-317
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• 1997

Estimation of the dielectric properties of insulating silicone rubbers added reinforcing fillers $(SiO_2,\;0{\sim}140phr)$ are very important to investigate the polymer structure. The characteristies of the dielectric absorption in insulating silicone rubbers were studied in the frequency range from 30Hz to 1MHz at the temperature range from $0{\sim}170^{\circ}C$. In the case of non-filled specimen, the dielectric loss is due to the syloxane which is the main chain of silicone rubber at the low temperature below $50^{\circ}C$ and the frequency at 330Hz, and is due to methyl and vinyl radical over the frequency of 1MHz. It is confirmed that the methyl radical or the vinyl radical becomes thermal oxidation at the high temperature over $100^{\circ}C$ and then the dielectric disperssing owing to the carboxyl radical Is appeared. In the case of filled specimen, the dielectric constant is in creased with the additives of reinforcing fillers due to the effect of interfacial polarization explained by MWS(Maxwell-Wagner-Sillars)'s law. The dielectric loss is decreased by the disturbance of reinforcing fillers that is permeated between networks.

• 전자공학회논문지A
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• 제29A권10호
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• pp.17-23
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• 1992

A ($Pb_{1-x}Ca_{x})ZrO_{3}$ system which has a high dielectric constant, low dielectric loss and temperature coefficient was investigated. For sintering temperatures above 1350$^{\circ}C$ the microstructures of sintered bodies were unchanged regardless of the amount of CaO. The dielectric constant and dielectric loss decreased and the temperature coefficient varied from positive to negative with the increasing amount of CaO. For the CaO content of 0.37, i.e. ($Pb_{0.63}Ca_{0.37})ZrO_{3}$, the ceramic showed very good dielectric properties such as ${\varepsilon}_1$=100, Q > 1200 at 3GHz, and T$_f$=$\pm$3ppm/$^{\circ}C$.

• Advances in materials Research
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• 제2권2호
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• pp.99-109
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• 2013

In the present investigation, nanocomposite films with poly(methyl methacrylate) (PMMA) as a polymer matrix and barium titanate as a filler were prepared by solution casting method. Barium titanate nano particles were prepared using Ti(IV) triethanolaminato isopropoxide and hydrated barium hydroxide as precursors and tetra methyl ammonium hydroxide (TMAH) as a base. The nanocomposite films were characterized using XRD, FTIR, SEM and dielectric spectroscopy techniques. Dielectric measurements were performed in the frequency range 100 Hz-10 MHz. Dielectric constant of nanocomposites were found to depend on the frequency, the temperature and the filler fraction. Dissipation factors were also influenced by the frequency and the temperature but not much influenced by the filler fractions. The 10 wt% of BT-PMMA nanocomposite had the lowest dielectric constant of 3.58 and dielectric loss tangent of 0.024 at 1MHz and $25^{\circ}C$. The dielectric mixing model of Modified Lichtenecker showed the close fit to the experimental data.

• 한국전기전자재료학회논문지
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• 제23권7호
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• pp.521-524
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• 2010

Low loss perovskite niobates and tantalates have been placed on a short list of functional materials for future technologies. In this study, we fabricated Ag(Ta,Nb)$O_3$ thick films on the $Al_2O_3$ substrates by the screen printing method. The Ag(Ta,Nb)$O_3$ powders were fabricated by the mixed oxide method. The sintering temperature and time were $1150^{\circ}C$ and 2 hrs, respectively. The results of XRD analysis showed that the specimens employed in this study had the pesudo cubic structure. The dielectric permittivity and loss tangent of the films have been characterized from 1 kHz to 1 MHz. Also the dielectric permittivity and loss tangent were measured from 303 K to 393 K. The electrical properties of the film are also discussed.

• 한국전자파학회논문지
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• 제15권11호
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• pp.1108-1115
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• 2004

본 논문에서는 밀리피터파 대역의 응용에 적용될 수 있는 새로운 형태의 로트맨 렌즈를 제시하였다. 본 논문에서 새로이 제시하는 유전판 로트맨 렌즈는 도체손실과 포트간 상호간섭(mutual coupling)을 감소시킬 수 있는 특성을 지니고 있으며 밀리미터 대역에서 구현이 보다 용이한 구조이다. 기존의 렌즈가 도체 평판 구조인데 반해 제안된 렌즈는 유전판과 슬롯으로 구성되어 있으며 TE$_{0}$모드로 구동한다. 중심주파수 15 GHz에서 9개의 빔 포트와 9개의 배열포트로 구성된 렌즈를 9개의 TSA(Tapered Slot Antenna) 배열과 더불어 설계 및 제작하였다. 측정결과에 따르면 빔폭은 13 GHz에서 약 15$^{\circ}$이며 효율은 약 34 %를 나타냈으며 포트간 상호간섭은 주파수가 상승함에 따라 점진적으로 감소함을 관찰할 수 있었다. 밀리미터 파 대 역에서 제작 및 측정 장비의 부족으로 인해 설계주파수를 15 GHz로 크게 낮추었음에도 불구하고 효율은 평행 도체판 구조의 렌즈와 대등한 값을 얻었다. 향후 밀리미터파 대역에서 고유전율 막(high dielectric thin film) 형태로 제작된다면 도체 손실파 상호간섭을 크게 감소시킬 것이 기대된다.

• 대한기계학회논문집A
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• 제26권6호
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• pp.1001-1007
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• 2002

To improve the performance of the PZT thin flms, each PZT and PT layer was alternately deposited on a Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si substrate by a modified sol-gel solid precursor technique. For comparison, PZT thin films were also prepared with an identical method under the same conditions. XRD measurement revealed that the diffraction pattern of the multilayer film was due to the superimposition of the PZT and PT patterns. At 1㎑, a dielectric constant of 389 and 558, a dielectric loss of 1.2% and 1.1% were obtained for the PZT/PT and PZT thin films, respectively. If we consider the PT dielectric constant to be 260, it is clear that the dielectric constant of alternately deposited PZT/PT thin films was well adjusted. The PZT/PT thin film showed a low dielectric constant and a similar dielectric loss compared with those of the PZT film. The figures of merit on detectivity for the PZT/PT and PZT thin films were 20.3$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and 18.7$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and the figures of merit on voltage response were 0.038㎡/C and 0.028 ㎡/C, respectively. The high figures of merit for the PZT/PT film were ascribed to its relatively low dielectric constant when compared to the PZT thin films.

• 폴리머
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• 제36권4호
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• pp.413-419
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• 2012

폴리페닐렌에테르[PPE, poly(phenylene ether)] 수지의 경화성분으로서 다관능 우레탄 아크릴레이트 단량체를 합성하고, 이후 PPE와 혼합하여 유전체 기판을 제작하고 그 특성을 평가하였다. 단량체 합성 후 FTIR, NMR 분석을 통하여 우레탄 결합이 형성되었는지 확인하였다. 복합물 쉬트를 필름 코터로 성형한 후, 진공가 압적층하여 테스트 기판을 제작하고, 단량체의 종류 및 함량에 따른 유전율, 유전손실, peel 강도를 평가하였다. 2종의 하이드록시 아크릴레이트 중 페닐기를 가진 2-hydroxy-3-phenoxypropyl acrylate를 이용하여 합성된 단량체를 경화성분으로 사용한 경우 유전손실이 더 작았으며, 단량체의 함량이 줄어들면서 유전율과 손실이 감소하는 경향을 나타내었다. Peel 강도는 단량체의 종류에 따라서 특별한 경향성을 보이지 않았다. 실험결과 동박 접합 강도가 약 10 N이고, 1 GHz에서 유전율이 약 2.54, 유전손실이 0.0027로 작은 고주파 대역용 고분자 기판소재를 얻었다.