• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.105-106
• /
• 2008

Structural, optical and electrical properties of CdS films deposited by chemical bath deposition (CBD), which are a very attractive method for low-cost and large-area solar cells, are presented. Cadmium sulfide (CdS) is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS films have a great application potential such as solar cell, optical detector and optoelectronics device. In this paper, effects of Rapid Thermal Process (RTP) on the properties of CdS films were investigated. The CdS films were prepared on a glass by chemical bath deposition (CBD) and subsequently annealed at standard temperature $(400^{\circ}C)$ and treatment time (10 min) in various atmospheres (air, vacuum and $N_2$). The CdS films treated RTP in $N_2$ for to min were showed larger grain size and higher carrier density than the other samples.

• 한국항행학회논문지
• /
• 제2권1호
• /
• pp.53-60
• /
• 1998

대기권 전파에 따른 심각한 다중파 페이딩 채널인 HF 대역을 사용하는 장거리 항공이동 통신의 페이딩 영향을 극복하는 방안으로 RZ-SSB 방식을 도입하였다. RZ-SSB의 전송대역은 ARINC 규정에 기술되어 있는 AME 즉, 반송파를 삽입한 단측파대 통신방식과 유사하기 때문에 이러한 설계 파라미터를 활용한 송, 수신기를 설계하였다. 또한 설계 시에는 32비트 부동소수점 연산 DSP를 이용함으로써 신호의 질과 신뢰도를 향상시켰고, 이로 인하여 성능이 향상된 저중량, 저가격의 송, 수신기를 설계하였다. 리미터의 사용과 복조시 변조방식과 상이한 위상 복조의 개념을 도입하여 다중파 진폭 페이딩을 제거하였고, 또한 항공전자 시스템의 특성으로 RZ-SSB 방식의 근원적인 단점 또한 극복되고 항공통신에의 적용이 가능함을 실험 결과로 제시한다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.159-159
• /
• 2011

Among the semiconductor ternary compounds in the I-III-$VI_2$ series, $CulnS_2$ ($CulnSe_2$) are one of the promising materials for photovoltaic applications because of the suitability of their electrical and optical properties. The $CuInS_2$ thin film is one of I-III-$VI_2$ type semiconductors, which crystallizes in the chalcopyrite structure. Its direct band gap of 1.5 eV, high absorption coefficient and environmental viewpoint that $CuInS_2$ does not contain any toxic constituents make it suitable for terrestrial photovoltaic applications. A variety of techniques have been applied to deposit $CuInS_2$ thin films, such as single/double source evaporation, coevaporation, rf sputtering, chemical vapor deposition and chemical spray pyrolysis. This is the first report that $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) technique which is a novel and attractive method because thin films with high deposition rate can be grown at very low cost. In this study, $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) method which employs a nozzle expansion. The mixed fluid is expanded through the nozzle into the chamber evacuated in a lower pressure to deposit $CuInS_2$ films on Mo coated glass substrate. In this AJD system, the characteristics of $CuInS_2$ films are dependent on various deposition parameters, such as compositional ratio of precursor solution, flow rate of carrier gas, stagnation pressure, substrate temperature, nozzle shape, nozzle size and chamber pressure, etc. In this report, $CuInS_2$ thin films are deposited using the deposition parameters such as the compositional ratio of the precursor solution and the substrate temperature. The deposited $CuInS_2$ thin films will be analyzed in terms of deposition rate, crystal structure, and optical properties.

• Journal of Communications and Networks
• /
• 제13권4호
• /
• pp.345-359
• /
• 2011

Decode-and-forward relaying is a promising enhancement to existing radio access networks and is already standardized in 3rd generation partnership project (3GPP) as a part of long term evolution (LTE)-Advanced Release 10. Two inband operation modes of relay nodes are supported, namely type 1 and type lb. Relay nodes promise to offer considerable gain for system capacity or coverage, depending on the deployment prioritization, in a cost-efficient way. Yet, in order to fully exploit the benefits of relaying, the inter-cell interference which is increased due to the presence of relay nodes should be limited. Moreover, large differences in the received power levels from different users should be avoided. The goal is to keep the receiver dynamic range low in order to retain the orthogonality of the single carrier-frequency division multiple access system. In this paper, an evaluation of the relay based heterogeneous deployment within the LTE-Advanced uplink framework is carried out by applying the standardized LTE Release 8 power control scheme both at evolved node B and relay nodes. In order to enhance the overall system performance, different power control optimization strategies are proposed for 3GPP urban and suburban scenarios. A comparison between type 1 and type 1b relay nodes is as well presented to study the effect of the relaying overhead on the system performance in inband relay deployments. Comprehensive system level simulations show that the power control is a crucial means to increase the cell edge and system capacities, to mitigate inter-cell interference and to adjust the receiver dynamic range for both relay node types.

• 한국수소및신에너지학회논문집
• /
• 제21권2호
• /
• pp.81-88
• /
• 2010

Hydrogen energy applications have recognized clean materials and high energy carrier. Accordingly, Hydrogen energy applies for fuel cell by Mg and Mg-based materials. Mg and Mg-based materials are lightweight and low cost materials with high hydrogen storage capacity. However, commercial applications of the Mg hydride are currently hinder by its high absorption/desorption temperature, and very slow reaction kinetics. Therefore one of the most methods to improve kinetics focused on addition transition metal oxide. Addition to transition metal oxide in $MgH_x$ powder produce $MgH_x$-metal oxide composition by mechanical alloy and it analyze XRD, EDS, TG/DSC, SEM, and PCT. This report considers kinetics by transition metal oxide rate and Hydrogen pressure. In this research, we can see behavior of hydriding/dehydriding profiles by addition catalyst (transition metal oxide). Results of PCI make a excellent showing $MgH_x$-5wt.% Sc2O3 at 623K, $MgH_x$-10wt.% $Sc_2O_3$ at 573K.

• Journal of Communications and Networks
• /
• 제15권6호
• /
• pp.559-568
• /
• 2013

We report on the first error-free terahertz (THz) wireless communication at 0.310 THz for data rates up to 8.2 Gbps using a 18-GHz-bandwidth GaAs/AlGaAs field-effect transistor as a detector. This result demonstrates that low-cost commercially-available plasma-wave transistors whose cut-off frequency is far below THz frequencies can be employed in THz communication. Wireless communication over 50 cm is presented at 1.4 Gbps using a uni-travelling-carrier photodiode as a source. Transistor integration is detailed, as it is essential to avoid any deleterious signals that would prevent successful communication. We observed an improvement of the bit error rate with increasing input THz power, followed by a degradation at high input power. Such a degradation appears at lower powers if the photodiode bias is smaller. Higher-data-rate communication is demonstrated using a frequency-multiplied source thanks to higher output power. Bit-error-rate measurements at data rates up to 10 Gbps are performed for different input THz powers. As expected, bit error rates degrade as data rate increases. However, degraded communication is observed at some specific data rates. This effect is probably due to deleterious cavity effects and/or impedance mismatches. Using such a system, realtime uncompressed high-definition video signal is successfully and robustly transmitted.

• Journal of Astronomy and Space Sciences
• /
• 제19권4호
• /
• pp.377-384
• /
• 2002

GPS L1 반송파 위상을 이용한 실시각 정밀측위 알고리즘(Real-time Phase DAta Processor: RPDAP)을 개발하고, 이를 기존의 L1 RTK(Real Time Kinematic) 측위정밀도와 비교하였다. 기존의 L1 RTK 기법은 관측환경에 매우 민감한 반면, RPDAP은 공통관측위성의 검색에 있어서 고도각이 낮거나 신호세기가 약한 위성을 제외함으로써 안정적인 결과를 산출할 수 있었다. RPDAP은 저가의 수신기를 이용하여 GPS 위상자료 측위기법을 실시각 응용분야에 적용하기 위한 것으로, 본 연구를 통한 L1 RTK기법과의 정밀도 비교·분석을 통해 RPDAP 알고리즘의 장·단점을 검토하고 향후 실용화를 위한 개선방안에 대해 논의하고자 한다. 향후 RPDAP과 함께 이동체의 고정밀 항법이나 개인위치추적 등에 RPDAP을 활용할 계획이다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.149-149
• /
• 2010

The double-layer antireflection (DLAR) coatings have significant advantages over single-layer antireflection (SLAR) coatings. This is because they will be able to cover a broad range of the solar spectrum which would enhance the overall performance of solar cells. Moreover films deposited at high frequency are expected to show excellent and UV-stable passivation in the refractive index that we adopted. In this work, we present a novel DLAR coating using SiNx:H thin films with refractive indices 1.9 and 2.3 as the top and bottom layers. This approach is cost effective when compared to earlier DLAR coatings with two different materials. SiNx:H films were deposited by Plasma enhanced chemical vapor deposition (PECVD) technique using $SiH_4$, $NH_3$ and $N_2$ gases with flow rates 20~80sccm, 200sccm and 85 sccm respectively. The RF power, plasma frequency and substrate temperature for the deposition were 300W, 13.56 MHz and $450^{\circ}C$, respectively. The optimum thickness and refractive indices values for DLAR coatings were estimated theoretically using Macleod simulation software as 82.24 nm for 1.9 and 68.58 nm for 2.3 respectively. Solar cells were fabricated with SLAR and DLAR coatings of SiNx:H films and compared the cell efficacy. SiNx:H> films deposited at a substrate temperature of $450^{\circ}C$ and that at 300 W power showed best effective minority carrier lifetime around $50.8\;{\mu}s$. Average reflectance values of SLAR coatings with refractive indices 1.9, 2.05 and 2.3 were 10.1%, 9.66% and 9.33% respectively. In contrast, optimized DLAR coating showed a reflectance value as low as 8.98% in the wavelength range 300nm - 1100nm.

• 한국전기전자재료학회논문지
• /
• 제36권6호
• /
• pp.588-593
• /
• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

• 한국재료학회지
• /
• 제33권12호
• /
• pp.525-529
• /
• 2023

β-Ga₂O₃ has become the focus of considerable attention as an ultra-wide bandgap semiconductor following the successful development of bulk single crystals using the melt growth method. Accordingly, homoepitaxy studies, where the interface between the substrate and the epilayer is not problematic, have become mainstream and many results have been published. However, because the cost of homo-substrates is high, research is still mainly at the laboratory level and has not yet been scaled up to commercialization. To overcome this problem, many researchers are trying to grow high quality Ga₂O₃ epilayers on hetero-substrates. We used diluted SiH4 gas to control the doping concentration during the heteroepitaxial growth of β-Ga₂O₃ on c-plane sapphire using metal organic chemical vapor deposition (MOCVD). Despite the high level of defect density inside the grown β-Ga₂O₃ epilayer due to the aggregation of random rotated domains, the carrier concentration could be controlled from 1 × 10¹⁹ to 1 × 10¹⁶ cm^-3 by diluting the SiH4 gas concentration. This study indicates that β-Ga₂O₃ hetero-epitaxy has similar potential to homo-epitaxy and is expected to accelerate the commercialization of β-Ga₂O₃ applications with the advantage of low substrate cost.