• Geomechanics and Engineering
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• v.15 no.2
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• pp.769-774
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• 2018

The growth of cities requires the construction of new tunnels close to the existing ones. Prediction and control of ground movement around the tunnel are important especially in urban area. The ground respond due to EPB (Earth Pressure Balance) pressure are investigated using the finite element method by ABAQUS in intersection of the triplet tunnels (Line 2, 3 and 4) of Mashhad Urban Railway in Iran. Special attention is paid to the effect of EPB pressure on the tunnel face displacement. The results of the analysis show that in EPB tunneling, surface settlement and face displacement is related to EPB pressure. Moreover, it is found that tunnel construction sequence is a great effect in face displacement value. For this study, this value in Line 4 where is excavated after line 3, is smaller than that line. In addition, the trend of the displacement curves are changed with the depth for all lines where is located in above and below, close to and above the centerline tunnel face for Line 2, 3 and 4, respectively. It is concluded that: (i) the surface settlement decreases with increasing EPB pressure on the tunnel face; (ii) at a constant EPB pressure, the tunnel face displacement values increase with depth. In addition, this is depended on the tunneling sequence; (iii) the trend of the displacement curves change with the depth.

• Journal of the Korean Magnetics Society
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• v.12 no.6
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• pp.201-205
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• 2002

The tunneling magnetoresistance (TMR) of a ramp-edge type junction has been studied. The samples with a structure of NiO(60)/Co(10)/NiO(60)/Si$_3$N$_4$(2-6)/NiFe(10) (nm) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics was obtained from a ramp-type tunneling junctions having the dominant difference between zero and ＋90 Oe perpendicular to the junction edge line. The voltage dependence of TMR was stable up to a bias volt of $\pm$10 V with a TMR ratio of about -10%, which may be very peculiar magnetic tunneling properties with asymmetric tunneling process between wedge Co pinned layer and NiFe free layer.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.2
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• pp.29-33
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• 2002

Various nanometer-scale structures are fabricated on hydrogen-passivated p-type Si(100) surface by scanning probe microscopy(SPM). The hydrogen-passivation is performed by dipping the samples in diluted 10% HF solution for one min.. Pt alloy wires are used for tips and the tips are made by cutting the wires at 45$^{\circ}$ slanted. Various line features are fabricated in various bias voltage. The optimal structure is the line of about 30 nm width on 1.7V bias voltage and 1 nA tunneling current.  

• Geomechanics and Engineering
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• v.11 no.1
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• pp.41-58
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• 2016

This paper focuses on the deformation behavior of tunnels crossing a weak zone in conventional tunneling. A three-dimensional finite element model was adopted that allows realistic modeling of the tunnel excavation and the support installation. Using the 3D FE model, a parametric study was conducted on a number of tunneling cases with emphasis on the spatial characteristics of the weak zone such as the strike and dip angle, and on the initial stress state. The results of the analyses were thoroughly examined so that the three-dimensional tunnel displacements at the tunnel crown and the sidewalls can be related to the spatial characteristic of the weak zone as well as the initial stress state. The results indicate that the effectiveness of the absolute displacement monitoring data as early warning indicators depends strongly on the spatial characteristics of the weak zone. It is also shown that proper interpretation of the absolute monitoring data can provide not only early warning for a weak zone outside the excavation area but also information on the orientation and the extent of the weak zone. Practical implications of the findings are discussed.

• Journal of Korean Tunnelling and Underground Space Association
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• v.22 no.2
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• pp.197-217
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• 2020

Shield TBM tunneling, used in the construction of Seoul subway line 7 and line 9, has been well known as a very efficient, as well as safe, tunneling method. Although the Shield TBM method has been known to be effectively used in poor ground conditions, a number of troubles have occurred during the use of the shield TBM, due to inappropriate machine selection, machine breakdown, and unpredicted ground conditions etc. In this study, several accidents and trouble cases occurred during excavation by Shield TBM, reported from Japan, were investigated. A series of numerical analysis was then performed to compare with the trouble cases and back-analysis results for the cause analysis. The lessons learned from the case studies are presented at the end.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.05a
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• pp.575-576
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• 2017

Recently, research have smart gateways can provide additional services through the IoT and Big Data. However, the existing System is number of devices connected increases to the Server, the stability of the network is degraded and data security is poor. In this paper, we design a smart gateway VPN tunneling control system based on IoT to solve these problems. we propose an effective VPN tunneling technology for low-end targets such as routers, and a method for efficiently controlling traffic in real-time in an environment where the quality of the Internet line changes dramatically. It is possible to control the sensor in the home safely through the VPN at the remote place.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.10a
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• pp.167-169
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• 2016

The structure guide lines of pocket tunnel field effect transistor(TFET) considering Line and Point tunneling are introduced. As the pocket doping concentration or thickness increase, on-current $I_{on}$ increases. As the pocket thickness or gate insulator increase, subthreshold swing(SS) increases. Optimal structure reducing the hump effects should be proposed in order to enhance SS.

• Explosives and Blasting
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• v.8 no.4
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• pp.3-22
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• 1990

The $\varphi{4.5}$ meters pilot tunneling work is almost done to the $\varphi{11.3}$ meters twin tunnel of NAM SAN No1. The south side pit of 400 meters is weak zone of Rock status, so client request us to allow the cautious blasting pattern for drilling on the condition of 0.2 kine vibration allowance limited for the safety of side running tunnel. The pattern of cautious blasting carried out by 6 time divided fiving on the round drilling depth of 1.20 meters(1.10) and also applied control blasting method with line drilling due to the reduction of vibration.

• Explosives and Blasting
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• v.14 no.3
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• pp.3-9
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• 1996

The scope of this cable works was as follows, it was drilled two shafts, NO. 1 shaft (${\phi}6.8m{\times}31m$), NO.2 shaft (${\phi}6.8m{\times}33m$), ) and it was connected two shaft in Tunneling. The first, it was needed to investigate the surey of influenced of vibration and noise by blastig to near by housing structure. 2nd, it was essential to decide the boundary line of influenced for agriculture water and portable water, by draw down of underground water. Blasting works has been done successfully without any problem, but by draw down of underground water, with in 250m level from #1 shaft, agriculture well drilled 8 place and portable water well drilled 7 place for near by farmers.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.10a
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• pp.616-618
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• 2016

Four types of structure of tunnel field-effect transistors (TFETs) have been investigated by TCAD simulation. Pocket and L-shaped TFETs are better performance than single-gate and double-gate TFETs in terms of on-current and subthreshold swing. New guideline of TFETs is presented for the structure design.