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Fabrication of Nanometer-scale Structure of Hydrogen-passivated p-type Si(100) Surface by SPM  

Kim, Dong-Sik (School of Computing & Information Syytems Inha Technical College)
Publication Information
Journal of the Institute of Electronics Engineers of Korea TE / v.39, no.2, 2002 , pp. 29-33 More about this Journal
Abstract
Various nanometer-scale structures are fabricated on hydrogen-passivated p-type Si(100) surface by scanning probe microscopy(SPM). The hydrogen-passivation is performed by dipping the samples in diluted 10% HF solution for one min.. Pt alloy wires are used for tips and the tips are made by cutting the wires at 45$^{\circ}$ slanted. Various line features are fabricated in various bias voltage. The optimal structure is the line of about 30 nm width on 1.7V bias voltage and 1 nA tunneling current.  
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