• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.417-420
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• 2007

A 12k-bit SRAM has been developed for line memory of system-on-glass (SoG) with lowtemperature poly-silicon (LTPS) thin film transistor (TFT). For accurate sensing even with the large variation and mismatches in the characteristics of LTPS TFT, mismatch immune sense amplifier is developed. The SRAM shows 30ns read access time with 7V supply voltage while dissipating 4.05mW and 1.75mW for write and read operation, respectively

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 B
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• pp.1395-1397
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• 1996

Many of the existing neural associative memories are trained and recalled in separate modes and are not suitable for temporal pattern storage and classification in that user must specify the time and length of input patterns. In this paper, a new on-line temporal associative memory model is presented. This memory is structured in layers of neurons and each neuron has limited number of weights so that calculation complexity can be considerably reduced and processing of patterns can be achieved in real time.

• 전자공학회논문지CI
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• 제43권4호
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• pp.23-30
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• 2006

본 논문은 $LiNbO_3$ 광스위칭 소자를 이용한 광컴퓨터 시스템인 SPOC(Stored Program Optical Computer)의 제어 동작의 문제점을 개선한 회로를 설계하고 검증한다. SPOC의 메모리는 DLM(Delay Line Memory) 구조이고, 오퍼런드가 필요 없는 명령어도 메모리 접근 과정을 수행하기 때문에 메모리 접근에 많은 시간이 소요되는 문제점이 있다. 또한 원하는 연산만을 선택하여 수행할 수 없기 때문에 산술논리장치에서 불필요한 연산이 많이 수행된다. 따라서 본 논문에서는 오퍼런드를 찾기 전에 미리 명령어를 해독함으로써 오퍼런드가 필요 없는 명령어의 메모리 접근을 제거하도록 회로를 개선한다. 또한 산술논리장치내의 모든 연산회로에 오퍼런드를 보내지 않고 특정 연산회로에만 오퍼런드를 보냄으로써 불필요한 연산을 줄인다. 그리고 DIR(Dual Instruction Register) 구조를 제시하여 전체 프로그램의 실행시간을 최소화한다.

• 한국정보통신학회논문지
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• 제15권10호
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• pp.2209-2216
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• 2011

본 논문에서는 Magnachip $0.18{\mu}m$ 공정을 이용하여 PMIC용 32bit eFuse OTP IP를 설계하였다. eFuse 링크 아래에 N-Well을 두어 프로그램시 eFuse 링크와 p-기판의 VSS가 단락되는 문제점을 해결하였다. 그리고 디코딩된 WERP (WL Enable for Read or Program) 신호가 eFuse OTP 메모리로 바로 입력되는 경우 듀얼 포트 eFuse OTP 메모리 셀의 RWL (Read Word-Line)과 WWL (Write Word-Line)을 선택적으로 활성화해 주는 WL 구동회로를 제안하였다. 또한 BL 프리차징 회로에서 delay chain을 제거하여 제어회로의 레이아웃 면적을 줄였다. 메모리 테스트 장비를 이용하여 제작된 94개의 샘플 die를 측정한 결과 5.5V의 프로그램 전압에서 100%의 수율을 얻었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.589-590
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• 2008

This paper describes an improved design of graphic memory for QVGA ($320{\times}240\;RGB$) - scale 262k-color LCD Driver IC. A distributor block is adopted to reduce graphic RAM area, which is accomplished with 1/8 data lines of the previous structure. In line-read operation, the drivabilty of memory array cell is improved by partitioning a word line according to the row address. The proposed graphic memory circuit has been designed in transistor level using $0.18{\mu}m$ CMOS technology library and verified using Hsim.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.26-27
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• 2006

To develop tera-bit level SONOS flash memories, SONOS unit memory and 64 bit flash arrays are fabricated. The unit cells have both channel length and width of 30nm. The NAND & NOR arrays are fabricated on SOI wafer and patterned by E-beam. The unit cells represent good write/erase characteristics and reliability characteristics. SSL-NOR array have normal write/erase operation. These researches are leading the realization of Tera-bit level non-volatile nano flash memory.

• Archives of Pharmacal Research
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• 제28권6호
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• pp.691-698
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• 2005

Phlorotannins, the polyphonic compounds found in brown Eisenia and Ecklonia algae, have several pharmacologically beneficial effects such as anti-inflammation. In addition, our recent data show that these compounds may improve the cognitive functions of aged humans suggesting the potential ability to enhance memory in several neurodegenerative disorders. To examine the experimental hypothesis that two effective components of Ecklonia cava, dieckol and phlorofucofuroeckol (PFF), have memory-enhancing abilities, both were administered orally to mice before a passive avoidance test. The repeated administration of either dieckol or PFF dose-dependently reduced the inhibition of latency by the administration of ethanol. To investigate the mode of memory-enhancing actions, the levels of major central neurotransmitters in three different regions (striatum, hippocampus, and frontal cortex) of the mouse brain were measured. The levels of some of the neurotransmitters were significantly changed by ethanol. Both dieckol and PFF altered the levels of some neurotransmitters modified by the ethanol treatment. It is noteworthy that both dieckol and PFF increased the level of acetylcho-line, and they exerted anticholinesterase activities. Overall, the memory-enhancing abilities of dieckol and PFF may result from, at least in part, the increment of the brain level of acetylcho-line by inhibiting acetylcholinesterase.

• 재활치료과학
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• 제3권1호
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• pp.57-65
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• 2014

목적 : 본 연구는 뇌졸중 환자를 대상으로 스마트폰 인지 어플리케이션을 이용한 집중력과 기억력 효과를 알아보고자 하였다. 연구방법 : 단일사례연구 방법 중 ABA 설계를 사용하여 기초선 A 5회, 중재기 B 10회, 기초선 A' 5회기로 총 20회기를 총 4주에 걸쳐 적용하였다. 기초선 A와 기초선 A' 기간에는 별도의 중재를 하지 않았고 중재기 B 기간 동안 '기억의 달인(숫자, 도형, 과일 모드)'과 'Matching cute animals'라는 어플리케이션을 통해 중재하였다. 전 회기에 걸쳐 '기억의 달인(랜덤 모드)'과 'Memory free(그림외우기)'어플리케이션을 이용해 기억력과 집중력을 평가하였다. 결과 자료는 그래프와 기술통계량으로 제시하였다. 결과 : 회기 별 실시한 기억력과 집중력 평가 결과, 기초선 A와 기초선 A' 기간보다 중재기 B 기간 동안 집중력과 기억력의 향상을 보였고, 중재 전과 후에 실시한 평가에서도 중재 후의 평가에서 집중력과 기억력의 향상을 보였다. 결론 : 본 연구를 통해 검증된 스마트폰 어플리케이션을 이용한 중재 효과가 임상적 근거를 제공하는데 유용하게 사용되기를 기대하며, 향후 연구에서는 더 많은 표본을 대상으로 장시간에 걸쳐 시행한 연구가 진행될 필요가 있다.

• 동의신경정신과학회지
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• 제19권3호
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• pp.85-100
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• 2008

Objective: This experiment was designed to investigate the effect of the KSKH hot water extract & ultra-fine powder on microglia and memory deficit model. Method: The effects of the KSKH hot water extract on expression of IL-1$\beta$, IL-6, TNF-$\alpha$ mRNA and production of IL-1$\beta$, IL-6, TNF-$\alpha$ in BV2 microglial cell line treated by lipopolysacchaide(LPS) were investigated. The effects of the KSKH hot water extract & ultra-fine-fine powder on the behavior of the memory deficit mice induced by scopolamine and AChE in serum of the memory deficit mice induced by scopolamine were investigated. Results: 1. The KSKH hot water extract suppressed the expression of IL-1$\beta$, IL-6, TNF-$\alpha$ mRNA in BV2 microglial cell line treated by LPS. 2. The KSKH hot water extract suppressed the production of IL-1$\beta$, IL-6, TNF-$\alpha$ in 100$\mu g/m\ell$ concentration of BV2 microglial cell line culture supernatant. 3. The KSKH hot water extract & ultra-fine powder decreased AChE activation significantly in the serum of the memory deficit mice induced by scopolamine. 4. The KSKH hot water extract & ultra-fine powder showed significant effect on memory impairment in the stop-through latency type of Morris water maze test. Conclusions: This experiment shows that the KSKH hot water extract & ultra-fine powder might be effective for the prevention and treatment of amnesia and Alzheimer's disease. Investigation into the clinical use of the KSKH hot water extract & ultra-fine powder for amnesia and Alzheimer's disease is suggested for future research.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.35-38
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• 2002

In this paper, the characteristics of channel hot electron (CHE) injection for the write operation in a NOR-type SONOS flash memory with common source line were investigated. The thicknesses of he tunnel oxide, the memory nitride， and the blocking oxide layers for the gate insulator of the fabricated SONOS devices were $34{\AA}$, $73{\AA}$, and $34{\AA}$, respectively. The SONOS devices compared to floating gate devices have many advantages, which are a simpler cell structure, compatibility with conventional logic CMOS process and a superior scalability. For these reasons, the introduction of SONOS device has stimulated. In the conventional SONOS devices, Modified Folwer-Nordheim (MFN) tunneling and CHE injection for writing require high voltages, which are typically in the range of 9 V to 15 V. However CHE injection in our devices was achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The memory window of about 3.2 V and the write speed of $100{\mu}s$ were obtained. Also, the disturbance and drain turn-on leakage during CHE injection were not affected in the SONOS array. These results show that CHE injection can be achieved with a low voltage and single power supply, and applied for the high speed program of the SONOS memory devices.