• Title/Summary/Keyword: Light-emitting Diode

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Improved Thermal Resistance of an LED Package Interfaced with an Epoxy Composite of Diamond Powder Suspended in H2O2 (과산화수소 적용 TIM의 LED 패키지 열특성 개선효과)

  • Choi, Bong-Man;Hong, Seong-Hun;Jeong, Yong-Beom;Kim, Ki-Bo;Lee, Seung-Gol;Park, Se-Geun;O, Beom-Hoan
    • Korean Journal of Optics and Photonics
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    • v.25 no.4
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    • pp.221-224
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    • 2014
  • We present a method for manufacturing a TIM used for packaging a high-power LED. In this method a mixture of diamond powder and hydrogen peroxide is used as a filler epoxy. The thermal resistance of the TIM with hydrogen peroxide was improved by about 30% over the thermal resistance of the TIM without hydrogen peroxide. We demonstrate that as a result the heat generated from the chip is easily dissipated through the TIM.

Heat Conduction Analysis of Metal Hybrid Die Adhesive Structure for High Power LED Package (고출력 LED 패키지의 열 전달 개선을 위한 금속-실리콘 병렬 접합 구조의 특성 분석)

  • Yim, Hae-Dong;Choi, Bong-Man;Lee, Dong-Jin;Lee, Seung-Gol;Park, Se-Geun;O, Beom-Hoan
    • Korean Journal of Optics and Photonics
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    • v.24 no.6
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    • pp.342-346
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    • 2013
  • We present the thermal analysis result of die bonding for a high power LED package using a metal hybrid silicone adhesive structure. The simulation structure consists of an LED chip, silicone die adhesive, package substrate, silicone-phosphor encapsulation, Al PCB and a heat-sink. As a result, we demonstrate that the heat generated from the chip is easily dissipated through the metal structure. The thermal resistance of the metal hybrid structure was 1.662 K/W. And the thermal resistance of the total package was 5.91 K/W. This result is comparable to the thermal resistance of a eutectic bonded LED package.

Fabrication of Oxidative Thin Film with Process Conditions by Transformer Coupled Plasma Chemical Vapor Deposition (TCP-CVD법을 활용한 공정변수에 따른 산화막의 제작)

  • Gim, T.J.;Choi, Y.;Shin, P.K.;Park, G.B.;Shin, H.Y.;Lee, B.J.
    • Journal of the Korean Vacuum Society
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    • v.19 no.2
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    • pp.148-154
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    • 2010
  • We have fabricated $SiO_2$ oxidation thin films by TCP-CVD (transformer coupled plasma chemical vapor deposition) method for passivation layer of OLED (organic light emitting diode). The purpose of this paper is to control and estimate the deposition rate and refracive index characteristics with process parameters. They are power, gas condition, distance of source and substrate and process temperature. The results show that transmittance of thin films is over 90%, rapid deposition rate and stable reflective index from 1.4 to 1.5 at controled process conditions. They are $SiH_4$ : $O_2$ = 30 : 60 [sccm] gas condition, 70 [mm] distance of source and substrate, no-biased substrate and under 80 [$^{\circ}C$] process temperature.

Frequency Dependent Properties of Tris(8-Hydroxyquinoline) Aluminum Thin Films

  • Lee, Yong-Soo;Park, Jae-Hoon;Choi, Jong-Sun
    • KIEE International Transactions on Electrophysics and Applications
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    • v.11C no.3
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    • pp.70-74
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    • 2001
  • Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.

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Machine Vision Instrument to Measure Spray Droplet Sizes (기계시각을 이용한 분무입자크기 측정)

  • Jeon, Hong-Young;Tian, Lei
    • Journal of Biosystems Engineering
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    • v.35 no.6
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    • pp.443-449
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    • 2010
  • A machine vision-based instrument to measure a droplet size spectrum of a spray nozzle was developed and tested to evaluate its accuracy on measuring spray droplet sizes and classifying nozzle sizes. The instrument consisted of a machine vision, light emitting diode (LED) illumination and a desktop computer. The illumination and machine vision were controlled by the computer through a C++ program. The program controlled the machine vision to capture droplet images under controlled illumination, and processed the droplet images to characterize the droplet size distribution of a spray nozzle. An image processing algorithm was developed to improve the accuracy of the system by eliminating random noise and out-of-focus droplets in droplet images while measuring droplet sizes. The instrument measured sizes of the three different balls (254.0, 497.8 and $793.8\;{\mu}m$) and the measurement ranges were $241.2-273.6\;{\mu}m$, $492.9-529.6\;{\mu}m$ and $800.8-824.1\;{\mu}m$ for 254.0-, 497.84- and $793.75-\;{\mu}m$ balls, respectively. Error of the measured droplet mean was less than 3.0 %. Droplet statistics, $D_{V0.1}$, $D_{V0.5}$ and $D_{V0.9}$, of a reference nozzle set were measured, and droplet size spectra of five spray nozzles covering from very fine to extremely coarse were measured to classify spray nozzle sizes. Ninety percent of the classification results of the instrument agreed with manufacturer's classification. A comparison study was carried out between developed and commercial instruments, and measurement results of the developed instrument were within 20 % of commercial instrument results.

Power Factor Correction LED Driver with Small 120Hz Current Ripple (낮은 120Hz 출력 전류 리플을 갖는 역률개선 LED 구동 회로)

  • Sakong, Suk-Chin;Park, Hyun-Seo;Kang, Jeong-Il;Han, Sang-Kyoo
    • The Transactions of the Korean Institute of Power Electronics
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    • v.19 no.1
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    • pp.91-97
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    • 2014
  • Recently, the LED(Light Emitting Diode) is expected to replace conventional lamps including incandescent, halogen and fluorescent lamps for some general illumination application, due to some obvious features such as high luminous efficiency, safety, long life, environment-friendly characteristics and so on. To drive the LED, a single stage PFC(Power Factor Correction) flyback converter has been adopted to satisfy the isolation, PFC and low cost. The conventional flyback LED driver has the serious disadvantage of high 120Hz output current ripple caused by the PFC operation. To overcome this drawback, a new PFC flyback with low 120Hz output current ripple is proposed in this paper. It is composed of 2 power stages, the DCM(Discontinuous Conduction Mode) flyback converter for PFC and BCM(Boundary Conduction Mode) boost converter for tightly regulated LED current. Since the link capacitor is located in the secondary side, its voltage stress is small. Moreover, since the driver is composed of 2 power stages, small output filter and link capacitor can be used. Especially, since the flyback is operated at DCM, the PFC can be automatically obtained and thus, an additional PFC IC is not necessary. Therefore, only one control IC for BCM boost converter is required. To confirm the validity of the proposed converter, theoretical analysis and experimental results from a prototype of 24W LED driver are presented.

Smart Dimming Control Algorithm for Reducing Power Consumption of LED TV Backlight (LED TV 백라이트 소비전력 저감을 위한 스마트 디밍 알고리즘 개발)

  • Ryu, Je-Seung;Park, Ju-Hee;Lim, Seong-Ho;Kim, Tae-Woo
    • The Transactions of the Korean Institute of Power Electronics
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    • v.19 no.4
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    • pp.320-326
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    • 2014
  • In this paper, the new smart dimming algorithm which is mixed with PWM and PAM control method is proposed for reducing the power consumption of LED TV Backlight. The proposed technique is using the curve characteristics of LED forward voltage and current which is proportionally changing LED forward voltage as changing LED forward current. Therefore, each PWM and PAM control method has different LED forward voltage and current in the same brightness condition. The PWM control method adjusts the brightness of LED TV Backlight by only varying the duty ratio of PWM and constantly sustaining the amplitude of LED forward current and voltage. So, the level of LED forward current and voltage in the PWM control method is relatively high and constant regardless of duty ratio of PWM. On the other hand, the PAM control method adjusts the brightness of LED TV Backlight by directly varying the level of LED forward current. So, the level of LED forward current and voltage in the PAM control method is lowered according to the brightness level. For the above-mentioned reason, the PAM control method has the advantage of reducing the total power consumption of LED TV Backlight at the brightness condition of below 100%, compared with PWM control method. By implementing this characteristic to LED driver circuit with control algorithm in MCU, the power consumption of LED TV Backlight can expect to be reduced. The effectiveness of the proposed method, new smart dimming algorithm, CPWAM(=Conditional Pulse Width Amplitude Modulation), has been verified by experimental results.

A New Current-Balancing Multi-Channel LED Driver for a Large Screen LCD Backlight Unit (대화면 LCD Backlight를 위한 새로운 전류평형 다채널 LED 구동회로)

  • Lee, Sang-Hyun;Cho, Sang-Ho;Roh, Chung-Wook;Hong, Sung-Soo;Han, Sang-Kyoo
    • The Transactions of the Korean Institute of Power Electronics
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    • v.15 no.2
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    • pp.111-118
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    • 2010
  • Recently, LCD TV using LED backlight has a great attention due to its low power consumption, slim construction, mercury free, wide color gamut and fast response. For the uniform brightness of the LCD panel, multi channel LEDs and DC/DC converter for each LED are required in conventional system. Therefore energy conversion efficiency is poor, the system size bulky and the cost of production high. To overcome these above mentioned drawbacks, a new current-balancing multi-channel LED driver is proposed in this paper. It can not only drive multi-channel LEDs with one DC/DC converter but also provide all LEDs with constant balanced current. To confirm the validity of the proposed driver, its operation and performance are verified on a prototype for 46" LCD TV.

Analysis of the Output Characteristics of IGZO TFT with Double Gate Structure (더블 게이트 구조 적용에 따른 IGZO TFT 특성 분석)

  • Kim, Ji Won;Park, Kee Chan;Kim, Yong Sang;Jeon, Jae Hong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.4
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    • pp.281-285
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    • 2020
  • Oxide semiconductor devices have become increasingly important because of their high mobility and good uniformity. The channel length of oxide semiconductor thin film transistors (TFTs) also shrinks as the display resolution increases. It is well known that reducing the channel length of a TFT is detrimental to the current saturation because of drain-induced barrier lowering, as well as the movement of the pinch-off point. In an organic light-emitting diode (OLED), the lack of current saturation in the driving TFT creates a major problem in the control of OLED current. To obtain improved current saturation in short channels, we fabricated indium gallium zinc oxide (IGZO) TFTs with single gate and double gate structures, and evaluated the electrical characteristics of both devices. For the double gate structure, we connected the bottom gate electrode to the source electrode, so that the electric potential of the bottom gate was fixed to that of the source. We denote the double gate structure with the bottom gate fixed at the source potential as the BGFP (bottom gate with fixed potential) structure. For the BGFP TFT, the current saturation, as determined by the output characteristics, is better than that of the conventional single gate TFT. This is because the change in the source side potential barrier by the drain field has been suppressed.

Improvement of Permeation of Solvent-free Multi-Layer Encapsulation of thin films on Ethylene Terephthalate(PET) (고분자 기판위에 유기 용매를 사용하지 않은 다층 박막 Encapsulation 기술 개발)

  • Kang, Hee-Jin;Han, Jin-Woo;Kim, Jong-Yeon;Moon, Hyun-Chan;Choi, Sung-Ho;Park, Kwang-Bum;Kim, Tae-Ha;Kim, Hwi-Woon;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.04a
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    • pp.56-57
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    • 2006
  • In this paper, the inorganic multi-layer thin film encapsulation was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, Sputter, inorganic multi-layer thin-film encapsulation was deposited onto the Ethylene Terephthalate(PET) and their interface properties between inorganic and organic layer were investigated. In this investigation, the SiON SiO2 and parylene layer showed the most suitable properties. Under these conditions, the WVTR for PET can be reduced from a level of $0.57\;g/m^2/day$ (bare subtrate) to 1*10-5 g/$m^2$/day after application of a SiON and SiO2 layer. These results indicates that the PET/SiO2/SiON/Parylene barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

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