• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.519-525
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• 2015

Positive bias stress-induced instability in amorphous indium-gallium-zinc-oxide (a-IGZO) bottom-gate thin-film transistors (TFTs) was investigated under high $V_{GS}$/low $V_{DS}$ and low $V_{GS}$/high $V_{DS}$ stress conditions through incorporating a forward/reverse $V_{GS}$ sweep and a low/high $V_{DS}$ read-out conditions. Our results showed that the electron trapping into the gate insulator dominantly occurs when high $V_{GS}$/low $V_{DS}$ stress is applied. On the other hand, when low $V_{GS}$/high $V_{DS}$ stress is applied, it was found that holes are uniformly trapped into the etch stopper and electrons are locally trapped into the gate insulator simultaneously. During a recovery after the high $V_{GS}$/low $V_{DS}$ stress, the trapped electrons were detrapped from the gate insulator. In the case of recovery after the low $V_{GS}$/high $V_{DS}$ stress, it was observed that the electrons in the gate insulator diffuse to a direction toward the source electrode and the holes were detrapped to out of the etch stopper. Also, we found that the potential profile in the a-IGZO bottom-gate TFT becomes complicatedly modulated during the positive $V_{GS}/V_{DS}$ stress and the recovery causing various threshold voltages and subthreshold swings under various read-out conditions, and this modulation needs to be fully considered in the design of oxide TFT-based active matrix organic light emitting diode display backplane.

• The Journal of the Korea institute of electronic communication sciences
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• v.5 no.1
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• pp.81-87
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• 2010

In this paper, we have fabricated $SiO_2$ oxidation thin films by HDP-CVD(high density plasma-chemical vapor deposition) method for passivation layer or barrier layer of OLED(organic light emitting diode). We have control and estimate the deposition rate and relative index characteristics with process parameters and get optimized conditions. They are gas flow rate($SiH_4:O_2$=30:60[sccm]), 70 [mm] distance from source to substrate and no-bias. The WVTR(water vapor transmission rate) is 2.2 [$g/m^2$_day]. Therefore fabricated thin film can not be applied as passivation layer or barrier layer of OLED.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.5
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• pp.381-388
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• 2014

Our aim was to simulate ocean waves in a small-size wave flume and observe the motion of a cylindrical floating body placed in an offshore environment. To precisely visualize the oscillation of the body, a set of light-emitting diode illuminators and high-speed charge-coupled device camera were installed in the flume. Spectral analysis was performed of the movement of the floating body. The wave generator and absorbers worked well to simulate stable regular waves. As the period of the oncoming waves changed, the movement of the floating body substantially differed when tethered to a tension-leg mooring cable. In particular, when connected to the tension-leg mooring cable, the natural frequency of the floating body suddenly appeared at 0.391 Hz as the wave period was increased.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.17-23
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• 2000

In this study, we prepared red organic light-emitting-diode(OLED) with a fluorescent dye(Sq)-doped and inserted between emission and cathode layer 1,3-bis(5-p-t-butylphenyl)-1,3,4-oxadiazol-2-yl)benzene (OXD7) or/and tris(8-hydroxyquinoline) aluminum ($Alq_3$) layers for increasing electroluminescent(EL) efficiency. This inserting effect has been observed and EL mechanism characteristics have been examined. The hole transfer layer is a N,N'-diphenyl-N,N'-bis-(3-methyl phenyl)-1,1'-diphenyl-4,4'-diamine (TPD), and the host and guest materials of emission layer is $Alq_3$ and bis[1-methyl-3,3'-dimethyl-2-indorindiylmethyl] squaraine (Sq), respectively. For the inserting of $Alq_3$, emission efficiency increased. But we can not obtained highly pure red emission owing to the emission of inserting $Alq_3$ layer. The inserting of OXD7 makes hole block and accumulate. Because of increasing recombination probability of electron and hole, highly pure red color can be held. Simultaneously brightness characteristics and emission efficiency could improve.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.7
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• pp.39-46
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• 2009

A fast-switching current-pulse driver for light emitting diode (LED) backlight is proposed. It uses a regulated drain current mirror (RD-CM) [1] and a high-voltage NMOS transistor (HV-NMOS). It achieves the fast-response current-pulse switching by using a dynamic gain-boosting amplifier (DGB-AMP). The DGB-AMP does not discharge the large HV-NMOS gate capacitance of the RD-CM when the output current switch turns off. Therefore, it does not need to charge the HV-NMOS gate capacitance when the switch turns on. The proposed current-pulse driver achieves the fast current switching by removing the repetitive gate discharging and charging. Simulation results were verified with measurements performed on a fabricated chip using a 5V/40V 0.5um BCD process. It reduces the switching delay to 360ns from 700ns of the conventional current-pulse driver.

• Journal of computational fluids engineering
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• v.18 no.1
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• pp.63-68
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• 2013

The purpose of this study is to investigate the cooling performance of radial heat sink used for high power LED lightings by natural convection cooling with surrounding air. Experimental and numerical analyses are carried out together. Parametric studies are performed to compare the effects of geometric parameters in radial heat sink such as the number of fins, fin height, fin length, and thickness of fin base as well as the surface coatings of radial heat sink. In this study, the cooling of 60 W LED lamp is examined with radiative heat transfer considered as well as natural convection. Numerical results show the optimum condition when the number of fin is 40, heat sink height is 120 mm, fin length is 15 mm, and fin base thickness is 3 mm. The difference in temperature of the LED metal PCB is within $1^{\circ}C$ between numerical analyses and experimental results. Also, the CNT coating on the heat sink surface is found to increase the cooling performance significantly.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.160-160
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• 2010

Organic electronic devices require a passivation layer to ensure sufficient lifetime. Specifically, flexible organic electronic devices need a barrier layer that transmits less than $10^{-6}\;g/m^2/day$ of water and $10^{-5}\;g/m^2/day$ of oxygen. To increase the lifetime of organic electronic device, therefore, it is indispensable to protect the organic materials from water and oxygen. Severe groups have reported on multi-layerd barriers consisting inorganic thin films deposited by plasma enhenced chemical deposition (PECVD) or sputtering. However, it is difficult to control the formation of granular-type morphology and microscopic pinholes in PECVD and sputtering. On the contrary, atomic layer deoposition (ALD) is free of pinhole, highly uniform, conformal films and show good step coverage. In this study, the passivation layer was deposited using single-process PEALD. The passivation layer, in our case, was a bilayer system consisting of $Al_2O_3$ films and a $TiO_2$ buffer layer on a poly (ether sulfon) (PES) substrate. Because the deposition temperature and plasma power have a significant effect on the properties of the passivation layer, the characteristics of the $Al_2O_3$ films were investigated in terms of density under different deposition temperatures and plasma powers. The effect of the $TiO_2$ buffer layer also was also addressed. In addition, the water vapor transmission rate (WVTR) and organic light-emitting diode (OLEDs) lifetime were measured after forming a bilayer composed of $Al_2O_3/TiO_2$ on a PES substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.95-95
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• 2014

An OLED(Organic Light-Emitting Diode) device based on the emissive electroluminescent layer a film of organic materials. OLED is used for many electronic devices such as TV, mobile phones, handheld games consoles. ULVAC's mass production systems are indispensable to the manufacturing of OLED device. ULVAC is a manufacturer and worldwide supplier of equipment and vacuum systems for the OLED, LCD, Semiconductor, Electronics, Optical device and related high technology industries. The SMD Series are single-substrate sputtering systems for deposition of films such as metal films and TCO (Transparent Conductive Oxide) films. ULVAC has delivered a large number of these systems not only Organic Evaporating systems but also LTPS CVD systems. The most important technology of thin-film encapsulation (TFE) is preventing moisture($H_2O$) and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass substrate, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This report provides a review of promising thin-film barrier technologies as well as the WVTR(Water Vapor Transmission Rate) properties. Multilayer thin-film deposition technology of organic and inorganic layer is very effective method for increasing barrier performance of OLED device. Gases and water in the organic evaporating system is having a strong influence as impurities to OLED device. CRYO pump is one of the very useful vacuum components to reduce above impurities. There for CRYO pump is faster than conventional TMP exhaust velocity of gases and water. So, we suggest new method to make a good vacuum condition which is CRYO Trap addition on OLED evaporator. Alignment accuracy is one of the key technologies to perform high resolution OLED device. In order to reduce vibration characteristic of CRYO pump, ULVAC has developed low vibration CRYO pumps to achieve high resolution alignment performance between Metal mask and substrate. This report also includes ULVAC's approach for these issues.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.7
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• pp.1702-1708
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• 2013

OLED has good efficiency of power consumption by having no power consumption from black color as different with LCD. when it has white color, all RGB pixel should be glowing with high power consumption and that can make it has short life time. This paper suggest the way of low power consumption for OLED panel using adaptive luminance enhancement with color compensation and implement it as hardware. This way which is based on luminance information of input image makes converted luminance value from each pixel in real time. There is with using the basic idea of chromaticity reduction algorithm, showing new algorithm of color correction. And performance of proposed method was confirmed by comparing the conventional method in experiments about 48.43% current reduction. The proposed method was designed by Verilog HDL and was verified by using OpenCV and Windows Program.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.309-310
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• 2005

In the fabrication of high performance red organic light emitting diode, 2-TNA TA [4,4',4" -tris (2-naphthylphenyl- phenylamino)-triphenylamine] as hole injection material and N PH [N,N'-bis (1-naphthyl) -N,N' -diphenyl-1, 1'-biphenyl-4,4'- diamine] as hole transport material were deposited on the ITO (indium tin oxide)/glass substrate by vacuum evaporation, And then, red color emission layer was deposited using Alq3 as a host material and Rubrene (5,6,11,12- tetraphenylnaphthacene) and GDI 4234 as dopants. Finally, small molecular weight OLED with the structure of ITO/2-TNATA/ NPB/Alq3+Rubrene+GDI4234/Alq3/LiF/Al was obtained by in-situ deposition of Alq3, LiF and Al as electron transport material, electron injection material and cathode. respectively. Green OLED fabricated in our experiments showed the color coordinate of CIE(0.65,0.35) and the maximum luminescence efficiency of 2.1 lm/W at 7 V with the peak emission wavelength of 632 nm.