• Title/Summary/Keyword: Light materials

Search Result 4,677, Processing Time 0.037 seconds

Lanthanide-Cored Supramolecular Systems with Highly Efficient Light-Harvesting Dendritic Arrays towards Tomorrow′s Information Technology

  • Kim, Hwan-Kyu;Roh, Soo-Gyun;Hong, Kyong-Soo;Ka, Jae-Won;Baek, Nam-Seob;Oh, Jae-Buem;Nah, Min-Kook;Cha, Yun-Hui;Jin Ko
    • Macromolecular Research
    • /
    • v.11 no.3
    • /
    • pp.133-145
    • /
    • 2003
  • We have developed novel lanthanide-cored supramolecular systems with highly efficient light-harvesting dendritic arrays for integrated planar waveguide-typed amplifiers. Er$^{3+}$ ions were encapsulated by the supramolecular ligands, such as porphyrins and macrobicyclics. The supramolecular ligands have been designed and synthesized to provide enough coordination sites for the formation of stable Er(III)-chelated complexes. For getting a higher optical amplification gain, also, the energy levels of the supramolecular ligands were tailored to maintain the effective energy transfer process from supramolecular ligands to erbium(III) ions. Furthermore, to maximize the light-harvesting effect, new aryl ether-functionalized dendrons as photon antennas have been incorporated into lanthanide-cored supramolecular systems. In this paper, molecular design, synthesis and luminescent properties of novel lanthanide-cored integrated supramolecular systems with highly efficient light-harvesting dendritic arrays will be discussed.d.

Photocatalytic Activity of EG-TiO2 Composite for Various Dye Solutions Under UV Light and Visible Light

  • Go, Yu-Gyoung;Kwon, Ho-Joung;Chen, Ming-Liang;Zhang, Feng-Jun;Oh, Won-Chun
    • Korean Journal of Materials Research
    • /
    • v.19 no.10
    • /
    • pp.555-561
    • /
    • 2009
  • Expanded graphite (EG) is synthesized by chemical intercalation of natural graphite (NG) and rapid expansion at high temperature, with titanium n-butoxide (TNB) used as titanium source by a sol-gel method to prepare EG-TiO$_2$ composite. The performances of the prepared EG-TiO$_2$ composite are characterized by BET surface area measurement, scanning electron microscopy (SEM), X-ray diffraction patterns (XRD) and energy dispersive X-ray analysis (EDX). To compare the photocatalytic activities of the EG-TiO$_2$ composite, three kinds of dye solutions, methylene blue (MB), methylene orange (MO) and rhodamine B (RhB), and two kinds of light source, UV light and visible light (VL), are used. Comparing the results, it can be clearly seen that the degradation of all of the dye solutions under irradiation by UV light is much better than that under irradiation by visible light, and the decomposition of MB solution was better than that of both of MO and RhB solution.

AC-Based Characterization of Quantum-Dot Light-Emitting Diodes

  • Hwang, Hee-Soo;Lee, Ki-Hun;Park, Chan-Rok;Yang, Heesun;Hwang, Jinha
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.02a
    • /
    • pp.466-466
    • /
    • 2013
  • Quantum-dot materials have introduced novel applications in organic light-emitting diodes and solar cells. The size controllability and structure modifications have continuously been upgrading the applicability to optoelectronic and flat-panel displays. In particular, quantum-dot organic light-emitting diodes (QLEDs) are a device driven through the electrical field applied to the electrical diodes. The QLEDs are affected by the constituent materials and the corresponding device structures. Conventionally, the electrical properties are characterized only in terms of dc-based current-voltage characteristics. The dynamic change in light-emitting diodes should be characterized in emitted and non-emitted states. Therefore, the frequency-dependent impedance can offer different information on the electrical performance in QLED. The current work reports an auxiliary information on the electrical and optical features originating from quantum-dot organic light-emitting diodes. The empirical characterizations are discussed towards an experimental tool in optimizing the light-emitting diodes.

  • PDF

Study of Light Weight Concrete Using Aggregate of Waste Plastic Materials (폐플라스틱 제품의 골재를 이용한 경량 콘크리트에 관한 연구)

  • 한상묵;조명석;송영철
    • Proceedings of the Korea Concrete Institute Conference
    • /
    • 2003.05a
    • /
    • pp.7-12
    • /
    • 2003
  • In scrapped material field, about ten millions ton of waste plastic materials are produced in korea. However recycling rate of waste plastic materials have above 25%. Therefore, it is urgently needed that they are used as recycled materials in order to prevent environment pollution and grain economic profits. In this paper, physical and mechanical properties of light weight concrete using waste plastic materials for aggregates are described in order to develop a light weight concrete with the aggregate made from waste plastic goods, it was carried out many experiments on mix proportion and strength. According to the experimental results, high-strength mortar was necessary to make light weight concrete using aggregate of waste plastic materials. Especially, considering the side of recycling of plastic wastes, it is recommended that recycled aggregates made from waste plastic materials is applied to light weight concrete.

  • PDF

Fabrication of MILC poly-Si TFT using scanning-RTA and light absorption layer

  • Pyo, Yu-Jin;Kim, Min-Sun;Kim, Young-Soo;Song, Nam-Kyu;Joo, Seung-Ki
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2005.07a
    • /
    • pp.307-309
    • /
    • 2005
  • We investigated light absorption layer effect on metal-induced lateral crystallization (MILC) growth rate and MILC thin films transistors (TFTs). As annealing method, we used scanning-rapid thermal annealing (RTA). MILC growth rate which was crystallized by light absorption layer and using scanning-RTA was 3 times than normal MILC which was without light absorption layer growth rate. Also we compared MILC TFTs characteristics which were combined to light absorption layer with conventional MILC TFTs. After scanning-RTA process, MILC-TFTs which were with light absorption layer were superior to conventional MILC-TFTs. With this new MILC-TFTs structure, we could reduced crystallization time and obtain good electrical properties.

  • PDF

Light-activated mechanism for metal oxide gas sensors (금속 산화물 가스 센서의 광 활성화 센싱 메커니즘)

  • Oum, Wansik;Shin, Ka Yoon;Yu, Dong Jae;Kang, Sukwoo;Kim, Eun Bi;Kim, Hyoun Woo
    • Journal of Sensor Science and Technology
    • /
    • v.30 no.6
    • /
    • pp.381-383
    • /
    • 2021
  • Light-activated metal oxide gas sensors have been investigated in recent decades. Light illumination enhances the sensing attributes, including the operational temperature, sensitivity, and selectivity. Unfortunately, high operating temperature is a major problem for gas sensors because of the huge energy consumption. Therefore, the importance of light-activated room-temperature sensing has increased. This paper reviews recent light-activated sensors and their sensing mechanisms with a specific focus on metal oxide gas sensors. Studies use the outstanding ZnO and SnO2 sensors to research photoactivation when illuminated by various sources such as ultraviolet (UV), halogen lamp, or monochromatic light. Photon induction generates electron-hole pairs that increase the number of adsorption sites of gas molecules and ions improving the sensor's sensing properties.

Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors

  • Shin, Jae-Heon;Lee, Ji-Su;Hwang, Chi-Sun;KoPark, Sang-Hee;Cheong, Woo-Seok;Ryu, Min-Ki;Byun, Chun-Won;Lee, Jeong-Ik;Chu, Hye-Yong
    • ETRI Journal
    • /
    • v.31 no.1
    • /
    • pp.62-64
    • /
    • 2009
  • We report on the bias stability characteristics of transparent ZnO thin film transistors (TFTs) under visible light illumination. The transfer curve shows virtually no change under positive gate bias stress with light illumination, while it shows dramatic negative shifts under negative gate bias stress. The major mechanism of the bias stability under visible illumination of our ZnO TFTs is thought to be the charge trapping of photo-generated holes at the gate insulator and/or insulator/channel interface.