• Journal of the Korean Society for Aeronautical & Space Sciences
• /
• v.33 no.11
• /
• pp.65-73
• /
• 2005

The compressible flow of reactive fluid is investigated by using the transonic small-disturbance (TSD) model and the one-step first-order Arrhenuis chemical reaction. The fluid flow is restricted to dilute premixed reactions with small heat release. The effects of channel shape and Mach number on transonic combustion are studied by numerical analysis. The results show that the channel divergence increases the chemical reaction within the given channel length whereas the channel convergence inhibits the chemical reaction near the outlet and that increasing the inlet flow Mach number at a fixed reaction rate causes the flow acceleration in a diverging channel and the appearance of weak shock waves which do not show in the inert flow case. It also helps to increase the pressure and temperature near the diverging channel outlet and to consume the reactant within the given channel length.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.43 no.6
• /
• pp.951-957
• /
• 1994

We present a new model for the series resistance of inverted-staggered amorphous silicon (a-Si) thin film transistors (TFT's) by employing the current spreading under the source and the drain contacts as well as the space charge limited current model. The calculated results based on our model have been in good agreements with the measured data over a wide range of applied voltage, gate-to-source and gate-to-drain overlap length, channel length, and operating temperature. Our model shows that the contribution of the series resistances to the current-voltage (I-V) characteristics of the a-Si TFT in the linear regime is more significant at low drain and high gate voltages, for short channel and small overlap length, and at low operating temperature, which have been verified successfully by the experimental measurements.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
• /
• v.27 no.10
• /
• pp.520-526
• /
• 2015

The characteristics of gas-liquid Taylor (Slug) flow in a square micro-channel of $600{\sim}600{{\mu}m}$ were investigated experimentally in this paper. The test fluids were nitrogen and water. The liquid and gas superficial velocities were 0.01~3 m/s and 0.1~3 m/s, respectively. Bubble and liquid slug length, bubble velocity, and frequency were measured by analyzing optical images using a high speed camera. Bubble length decreased with higher liquid flow rate, which increased dramatically with higher gas flow rate. However, slug length did not vary with changes in inlet liquid conditions. Additionally, bubble velocities and frequencies increased with higher liquid and gas flow rates. It was found that measured bubble lengths were in good agreement with the empirical models in the existing literature, but slug lengths were not.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.7 s.361
• /
• pp.16-23
• /
• 2007

For a fully depleted SOI type symmetric double gate MOSFET, a simple expression for the threshold voltage has been derived in a closed-form To solve analytically the 2D Poisson's equation in a silicon body, the two-dimensional potential distribution is assumed approximately as a polynomial of fourth-order of x, vertical coordinate perpendicular to the silicon channel. From the derived expression for the surface potential, the threshold voltage can be obtained as a simple closed-form. Simulation result shows that the threshold voltage is exponentially dependent on channel length for the range of channel length up to $0.01\;[{\mu}m]$.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.4 no.1
• /
• pp.41-44
• /
• 2004

The trend of decreasing the minimal structure sizes in microelectronics is still being continued. Therefore in its roadmap the Semiconductor Industries Association predicts a printed minimum MOS-transistor channel length of 10 nm for the year 2018. Although the resolution of optical lithography still dramatically increases, there are known and proved solutions for structure sizes significantly below 50 nm up to now. In this work a new method for the fabrication of extremely small MOS-transistors with a channel length and width below 50 nm with low demands to the used lithography will be explained. It's a further development of our deposition and etchback technique which was used in earlier research to produce transistors with very small channel lengths down to 30 nm, with a scaling of the transistor's width. The used technique is proved in a first charge of MOS-transistors with a channel area of W=200 nm and L=80 nm. The full CMOS compatible technique is easily transferable to almost any other technology line and results in an excellent homogeneity and reproducibility of the generated structure size. The electrical characteristics of such small transistor will be analyzed and the ultimate limits of the technique will be discussed.

• ETRI Journal
• /
• v.31 no.2
• /
• pp.162-172
• /
• 2009

A linear-prediction-based blind equalization algorithm for single-input single-output (SISO) finite impulse response/infinite impulse response (FIR/IIR) channels is proposed. The new algorithm is based on second-order statistics, and it does not require channel order estimation. By oversampling the channel output, the SISO channel model is converted to a special single-input multiple-output (SIMO) model. Two forward linear predictors with consecutive prediction delays are applied to the subchannel outputs of the SIMO model. It is demonstrated that the partial parameters of the SIMO model can be estimated from the difference between the prediction errors when the length of the predictors is sufficiently large. The sufficient filter length for achieving the optimal prediction is also derived. Based on the estimated parameters, both batch and adaptive minimum-mean-square-error equalizers are developed. The performance of the proposed equalizers is evaluated by computer simulations and compared with existing algorithms.

• Proceedings of the IEEK Conference
• /
• 1999.11a
• /
• pp.875-878
• /
• 1999

In this paper, we measured and simulated the transconductance change of submicron LDD NMOSFETs due to back bias under various channel length, temperature and substrate doping conditions. As back bias is increased, the mobility will decrease and g$_{m}$ decreases according to a conventional model. But as the channel length is reduced, this phenomenon is inverted and g$_{m}$ increases in the submicron region. This can be explained by analyzing the electron quasi Fermi potential in the channel. And the empirical formulae which show the g$_{m}$ change were induced. These will be helpful to enhance the efficiency and precision of IC design.esign.

• Journal of Communications and Networks
• /
• v.9 no.1
• /
• pp.28-33
• /
• 2007

Estimated channel information, especially multipath length and multipath channel of the desired user, is necessary for most previously reported linear blind multiuser detectors in code division multiple access (CDMA) systems. This paper presents a new blind intersymbol decorrelating detector in asynchronous CDMA systems, which uses the cross correlation matrix of the consecutive symbols. The proposed detector is attractive for its simplicity because no channel estimation is required except the synchronization of the desired user. Compared with other reported multiuser detectors, simulation results show that the proposed detector provides a good performance when the active users have significant intersymbol interference and the multipath length is short.

• Journal of Korea Society of Industrial Information Systems
• /
• v.19 no.2
• /
• pp.1-13
• /
• 2014

In IEEE 802.11p/1609-based vehicular networks, vehicles are allowed to exchange safety and control messages only within time periods, called control channel (CCH) interval, which are scheduled periodically. Currently, the length of the CCH interval is set to the fixed value (i.e. 50ms). However, the fixed-length intervals cannot be effective for dynamically changing traffic load. Hence, some protocols have been recently proposed to support variable-length CCH intervals in order to improve channel utilization. In existing protocols, the CCH interval is subdivided into safety and non-safety intervals, and the length of each interval is dynamically adjusted to accommodate the estimated traffic load. However, they do not consider the presence of hidden nodes. Consequently, messages transmitted in each interval are likely to overlap with simultaneous transmissions (i.e. interference) from hidden nodes. Particularly, life-critical safety messages which are exchanged within the safety interval can be unreliably delivered due to such interference, which deteriorates QoS of safety applications such as cooperative collision warning. In this paper, we therefore propose a new interference-aware Dynamic Safety Interval (DSI) protocol. DSI calculates the number of vehicles sharing the channel with the consideration of hidden nodes. The safety interval is derived based on the measured number of vehicles. From simulation study using the ns-2, we verified that DSI outperforms the existing protocols in terms of various metrics such as broadcast delivery ration, collision probability and safety message delay.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2000.05a
• /
• pp.222-225
• /
• 2000

In this paper, a synchronous CDMA system accepted for the cdma2000 standard is simulated to propose optimized reverse link power ratio and channel estimation lengths. Differently from IS-95, the pilot channel is used in the proposed system to estimate fading channel, so optimized estimation lengths are needed. Therefore, in this paper we analyze optimized estimation lengths which is needed to decide the power ratio of pilot channel and fundamental channel. From fixed estimation lengths, we calculate FER with various power ratio values.