• 제목/요약/키워드: Length of a channel

검색결과 1,218건 처리시간 0.028초

채널형상과 마하수가 천음속 연소에 미치는 영향에 대한 수치해석적 연구 (A Numerical Study of Channel Shape and Mach Number Effects on Transonic Combustion)

  • 이장창
    • 한국항공우주학회지
    • /
    • 제33권11호
    • /
    • pp.65-73
    • /
    • 2005
  • 천음속 미교란 모델과 1단계 1차 Arrhenius 화학반응식을 이용하여 반응유체의 압축성 유동에 대하여 연구하였다. 유체 유동은 적은 열방출을 수반하는 희박 예혼합 반응에 국한시켰다. 천음속 연소에 끼치는 채널형상과 채널입구 마하수의 영향 등을 수치해석을 이용하여 조사하였다. 수치결과에서 채널확대는 주어진 채널길이 내에서 화학반응을 증가시키고 있음에 반하여 채널수축은 출구 근처에서 화학반응을 억제시키고 있음을 보여주고 있다. 확대형 채널 내에서 입구유동 마하수 증가는 고정된 반응속도에서 유동을 가속시켰으며 불활성 유체 경우에는 나타나지 않는 약한 충격파가 나타났다. 또한 확대형 채널 출구 근처의 압력과 온도를 증가시키고 주어진 채널길이 내에서 반응체의 소비를 도와준다.

비정질 실리코 박막 트랜지스터의 직렬 저항에 관한 분석 (Analysis for Series Resistance of Amorphous Silicon Thin Film Transistor)

  • Kim, Youn-Sang;Lee, Seong-Kyu;Han, Min-Koo
    • 대한전기학회논문지
    • /
    • 제43권6호
    • /
    • pp.951-957
    • /
    • 1994
  • We present a new model for the series resistance of inverted-staggered amorphous silicon (a-Si) thin film transistors (TFT's) by employing the current spreading under the source and the drain contacts as well as the space charge limited current model. The calculated results based on our model have been in good agreements with the measured data over a wide range of applied voltage, gate-to-source and gate-to-drain overlap length, channel length, and operating temperature. Our model shows that the contribution of the series resistances to the current-voltage (I-V) characteristics of the a-Si TFT in the linear regime is more significant at low drain and high gate voltages, for short channel and small overlap length, and at low operating temperature, which have been verified successfully by the experimental measurements.

사각 마이크로 채널 내 Taylor Flow의 기포 및 액체 슬러그 유동 특성에 대한 연구 (Study on the Characteristics of Bubble and Liquid Slugs for Gas-Liquid Taylor Flow in a Rectangular Micro-channel)

  • 이준경;이관근
    • 설비공학논문집
    • /
    • 제27권10호
    • /
    • pp.520-526
    • /
    • 2015
  • The characteristics of gas-liquid Taylor (Slug) flow in a square micro-channel of $600{\sim}600{{\mu}m}$ were investigated experimentally in this paper. The test fluids were nitrogen and water. The liquid and gas superficial velocities were 0.01~3 m/s and 0.1~3 m/s, respectively. Bubble and liquid slug length, bubble velocity, and frequency were measured by analyzing optical images using a high speed camera. Bubble length decreased with higher liquid flow rate, which increased dramatically with higher gas flow rate. However, slug length did not vary with changes in inlet liquid conditions. Additionally, bubble velocities and frequencies increased with higher liquid and gas flow rates. It was found that measured bubble lengths were in good agreement with the empirical models in the existing literature, but slug lengths were not.

SOI형 대칭 DG MOSFET의 문턱전압 도출에 대한 간편한 해석적 모델 (A simple analytical model for deriving the threshold voltage of a SOI type symmetric DG-MOSFET)

  • 이정호;서정하
    • 대한전자공학회논문지SD
    • /
    • 제44권7호통권361호
    • /
    • pp.16-23
    • /
    • 2007
  • 본 논문에서는 완전 공핍된 SOI형 대칭 이중게이트 MOSFET의 문턱 전압에 대한 간단한 해석적 모델을 제시하고자 실리콘 몸체 내의 전위 분포를 근사적으로 채널에 수직한 방향의 좌표에 대해 4차 다항식으로 가정하였다. 이로써 2차원 포아송 방정식을 풀어 표면 전위의 표현식을 도출하고, 이 결과로부터 드레인 전압 변화에 의한 문턱 전압의 roll-off를 비교적 정확하게 기술할 수 있는 문턱 전압의 표현식을 closed-form의 간단한 표현식으로 도출하였다. 도출된 표현식으로 모의 실험을 수행한 결과 $0.01\;[{\mu}m]$의 실리콘 채널 길이 범위까지 채널 길이에 지수적으로 감소하는 것을 보이는 비교적 정확한 결과를 얻을 수 있음을 확인하였다.

CMOS Compatible Fabrication Technique for Nano-Transistors by Conventional Optical Lithography

  • Horst, C.;Kallis, K.T.;Horstmann, J.T.;Fiedler, H.L.
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • 제4권1호
    • /
    • pp.41-44
    • /
    • 2004
  • The trend of decreasing the minimal structure sizes in microelectronics is still being continued. Therefore in its roadmap the Semiconductor Industries Association predicts a printed minimum MOS-transistor channel length of 10 nm for the year 2018. Although the resolution of optical lithography still dramatically increases, there are known and proved solutions for structure sizes significantly below 50 nm up to now. In this work a new method for the fabrication of extremely small MOS-transistors with a channel length and width below 50 nm with low demands to the used lithography will be explained. It's a further development of our deposition and etchback technique which was used in earlier research to produce transistors with very small channel lengths down to 30 nm, with a scaling of the transistor's width. The used technique is proved in a first charge of MOS-transistors with a channel area of W=200 nm and L=80 nm. The full CMOS compatible technique is easily transferable to almost any other technology line and results in an excellent homogeneity and reproducibility of the generated structure size. The electrical characteristics of such small transistor will be analyzed and the ultimate limits of the technique will be discussed.

Blind MMSE Equalization of FIR/IIR Channels Using Oversampling and Multichannel Linear Prediction

  • Chen, Fangjiong;Kwong, Sam;Kok, Chi-Wah
    • ETRI Journal
    • /
    • 제31권2호
    • /
    • pp.162-172
    • /
    • 2009
  • A linear-prediction-based blind equalization algorithm for single-input single-output (SISO) finite impulse response/infinite impulse response (FIR/IIR) channels is proposed. The new algorithm is based on second-order statistics, and it does not require channel order estimation. By oversampling the channel output, the SISO channel model is converted to a special single-input multiple-output (SIMO) model. Two forward linear predictors with consecutive prediction delays are applied to the subchannel outputs of the SIMO model. It is demonstrated that the partial parameters of the SIMO model can be estimated from the difference between the prediction errors when the length of the predictors is sufficiently large. The sufficient filter length for achieving the optimal prediction is also derived. Based on the estimated parameters, both batch and adaptive minimum-mean-square-error equalizers are developed. The performance of the proposed equalizers is evaluated by computer simulations and compared with existing algorithms.

  • PDF

submicron LDD NMOSFET에서 back bias에 따른 transconductance 변화에 대한 연구 (A Study on the Transconductance Change of submicron LDD NMOSFETs under back bias)

  • 원명규;구용서;안철
    • 대한전자공학회:학술대회논문집
    • /
    • 대한전자공학회 1999년도 추계종합학술대회 논문집
    • /
    • pp.875-878
    • /
    • 1999
  • In this paper, we measured and simulated the transconductance change of submicron LDD NMOSFETs due to back bias under various channel length, temperature and substrate doping conditions. As back bias is increased, the mobility will decrease and g$_{m}$ decreases according to a conventional model. But as the channel length is reduced, this phenomenon is inverted and g$_{m}$ increases in the submicron region. This can be explained by analyzing the electron quasi Fermi potential in the channel. And the empirical formulae which show the g$_{m}$ change were induced. These will be helpful to enhance the efficiency and precision of IC design.esign.

  • PDF

Intersymbol Decorrelating Detector for Asynchronous CDMA Systems

  • Zhang Gaonan;Bi Guoan;Kot Alex Chichung
    • Journal of Communications and Networks
    • /
    • 제9권1호
    • /
    • pp.28-33
    • /
    • 2007
  • Estimated channel information, especially multipath length and multipath channel of the desired user, is necessary for most previously reported linear blind multiuser detectors in code division multiple access (CDMA) systems. This paper presents a new blind intersymbol decorrelating detector in asynchronous CDMA systems, which uses the cross correlation matrix of the consecutive symbols. The proposed detector is attractive for its simplicity because no channel estimation is required except the synchronization of the desired user. Compared with other reported multiuser detectors, simulation results show that the proposed detector provides a good performance when the active users have significant intersymbol interference and the multipath length is short.

A New Interference-Aware Dynamic Safety Interval Protocol for Vehicular Networks

  • 유홍석;장주석;김동균
    • 한국산업정보학회논문지
    • /
    • 제19권2호
    • /
    • pp.1-13
    • /
    • 2014
  • In IEEE 802.11p/1609-based vehicular networks, vehicles are allowed to exchange safety and control messages only within time periods, called control channel (CCH) interval, which are scheduled periodically. Currently, the length of the CCH interval is set to the fixed value (i.e. 50ms). However, the fixed-length intervals cannot be effective for dynamically changing traffic load. Hence, some protocols have been recently proposed to support variable-length CCH intervals in order to improve channel utilization. In existing protocols, the CCH interval is subdivided into safety and non-safety intervals, and the length of each interval is dynamically adjusted to accommodate the estimated traffic load. However, they do not consider the presence of hidden nodes. Consequently, messages transmitted in each interval are likely to overlap with simultaneous transmissions (i.e. interference) from hidden nodes. Particularly, life-critical safety messages which are exchanged within the safety interval can be unreliably delivered due to such interference, which deteriorates QoS of safety applications such as cooperative collision warning. In this paper, we therefore propose a new interference-aware Dynamic Safety Interval (DSI) protocol. DSI calculates the number of vehicles sharing the channel with the consideration of hidden nodes. The safety interval is derived based on the measured number of vehicles. From simulation study using the ns-2, we verified that DSI outperforms the existing protocols in terms of various metrics such as broadcast delivery ration, collision probability and safety message delay.

동기식 DS-CDMA 시스템의 역방향 채널 전력비와 채널 추정 길이의 최적화에 관한 연구 (A Study on Reverse Link Power Ratio and Channel Estimation Length Optimization of Synchronous DS-CDMA System)

  • 박진홍;강성진;강병권;김선형
    • 한국정보통신학회:학술대회논문집
    • /
    • 한국해양정보통신학회 2000년도 춘계종합학술대회
    • /
    • pp.222-225
    • /
    • 2000
  • 본 논문에서는 차세대 멀티미디어 통신인 IMT-2000 시스템의 엑세스 방식으로 제안되고 있는 cdma2000 규격을 채용한 동기식 CDMA 시스템을 시뮬레이션하여 최적의 역방향 채널 전력비와 채널 추정 길이를 구하였다. 제안된 시스템은 기존의 IS-95와는 달리 Pilot 채널을 이용하여 페이딩 채널을 추정하며, 이에 따라 최적의 추정 길이(Estimation Lengths)가 요구된다. 따라서 본 논문에서는 Pilot Channel과 Fundamental Channel의 전력비에 따라 요구되는 최적의 추정 길이를 구하였고, 또한 고정된 추정 길이에서 전력비의 변화에 따른 FER을 구하였다.

  • PDF