• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.1A
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• pp.74-80
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• 2000

In this paper, we proposed the MAC protocol and analyzed the performance for CATV/LAN network which was based upon HFC(hybrid optic coaxial) increased abruptly as alternative method of high speed network. Upstream channel which analyzed very deeply for CATV/LAN network have the preferential access property depending upon that position and unidirectional property. To solve this fairness problem, we propose the CSMA-CD/U/P protocol that transm it as $P_i$ probability although data packets is immediately transmitted when it was occurred. As the analytic result and simulation, we obtained $P_i$ value and its average delay time. Also, we get its variance value and queue length distribution. The mean delay time and queue length increase as the load and number of stations increase in the CATV/LAN network.

• Journal of Advanced Navigation Technology
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• v.21 no.6
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• pp.659-665
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• 2017

In this paper, a low complexity fast Fourier transform(FFT) processor is proposed for multiple input multiple output(MIMO) systems. The IEEE 802.11ac standard has been adopted along with the demand for a system capable of high channel capacity and Gbps transmission in order to utilize various multimedia services using a wireless LAN. The proposed scalable FFT processor can support the variable length of 64, 128, 256, and 512 for 8x8 antenna configuration as specified in IEEE 802.11ac standard with MIMO-OFDM scheme. By reducing the required number of non-trivial multipliers with mixed-radix(MR) and multipath delay commutator(MDC) architecture, the complexity of the proposed FFT processor was dramatically decreased. Implementation results show that the proposed FFT processor can reduced the logic gate count by 50%, compared with the radix-2 SDF FFT processor. Also, compared with the 8-channel MR-2/2/2/4/2/4/2 MDC processor and 8-channel MR-2/2/2/8/8 MDC processor, it is shown that the gate count is reduced by 18% and 17% respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.29-34
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• 2004

This paper reports the RF dispersion and linearity characteristics of unpassivated AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE). The devices with a 0.5 ${\mu}{\textrm}{m}$ gate-length exhibited relatively good DC characteristics with a maximum drain current of 730 mA/mm and a peak g$_{m}$ of 156 mS/mm. Highly linear characteristic was observed by relatively flat DC transconductance (g$_{m}$) and good inter-modulation distortion characteristics, which indicates tight channel carrier confinement of the InGaN channel. Little current collapse in pulse I-V and load-pull measurements was observed at elevated temperatures and a relatively high power density of 1.8 W/mm was obtained at 2 GHz. These results indicate that current collapse related with surface states will not be a power limiting factor for the AlGaN/InGaN HEMTs.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.7
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• pp.1675-1683
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• 1995

A numerical study of the fluid flow and heat transfer characteristics of the two-dimensional impingement jet with a confinement plate has been carried out. The fluid flow was calculated by solving the full Navier-Stokes equation. In doing that, the well known SIMPLER algorithm was used and the trouble making convection term was discretized according to QUICKER scheme. The energy equation was simply solved by using the SOR method. For the Reynolds number of 10000, two channel heights, say 1.5 and 3.0 times the jet exit width, and two thermal boundary conditions constant wall temperature and constant wall heat flux were considered. Discrete heat sources were flush mounted along the impingement plate at a distance of 0, 2, 3, 4, 5, 6, 10, 12, times the jet exit width from the stagnation point. The length of each heat source is 4 times the jet exit width long. The Nusselt number averaged over each heat source was compared with experiment. Comparison shows that both calculations and experiment have the secondary peak of Nusselt number at downstream of stagnation point, even though there is a little quantitative difference in between. The difference is believed due to abscure thermal boundary condition in experiment and also accuracy of turbulence model used. The secondary peak is shown to be caused by rigorous turbulent flow motion generated as the wall jet flow is retarded and developes into the channel flow without flow reversal.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.6 no.6
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• pp.1522-1545
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• 2012

Call admission control (CAC) plays an important role in mobile cellular network to guarantee the quality of service (QoS). In this paper, a dynamic hybrid CAC scheme with integrated cutoff priority and handoff queue for mobile cellular network is proposed and some performance metrics are derived. The unique characteristic of the proposed CAC scheme is that it can support any number of service types and that the cutoff thresholds for handoff calls are dynamically adjusted according to the number of service types and service priority index. Moreover, timeouts of handoff calls in queues are also considered in our scheme. By modeling the proposed CAC scheme with a one-dimensional Markov chain (1DMC), some performance metrics are derived, which include new call blocking probability ($P_{nb}$), forced termination probability (PF), average queue length, average waiting time in queue, offered traffic utilization, wireless channel utilization and system performance which is defined as the ratio of channel utilization to Grade of Service (GoS) cost function. In order to validate the correctness of the derived analytical performance metrics, simulation is performed. It is shown that simulation results match closely with the derived analytic results in terms of $P_{nb}$ and PF. And then, to show the advantage of 1DMC modeling for the performance analysis of our proposed CAC scheme, the computing complexity of multi-dimensional Markov chain (MDMC) modeling in performance analysis is analyzed in detail. It is indicated that state-space cardinality, which reflects the computing complexity of MDMC, increases exponentially with the number of service types and total channels in a cell. However, the state-space cardinality of our 1DMC model for performance analysis is unrelated to the number of service types and is determined by total number of channels and queue capacity of the highest priority service in a cell. At last, the performance comparison between our CAC scheme and Mahmoud ASH's scheme is carried out. The results show that our CAC scheme performs well to some extend.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.10
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• pp.156-161
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• 2007

In a TDD system, the length of slots can be unequal, and the number of downlink (DL) and uplink (UL) slots per frame can be different as well. The advantage of using TDD is the capability to accommodate asymmetric high-bit-rate services for the DL and It, which will be one of the prominent features in 4G systems. This paper analyzes the performance of TDD system on mobile channel environments like indoor pedestrian and vehicular channel, and proposes optimum modulation/demodulation method in TDD system. A rectangular QAM (RQAM) used in various communication systems has good BER performance but the much more signal amplitudes also have become one of the barriers to implement receiver. While PSK receiver is implemented easily because it has a constant amplitude, but it's BER performance is worse than RQAM. APSK proposed in this paper integrates merits of RQAM and PSK, and minimizes demerits of then And a simple method is also proposed to demodulate the soft symbol. The results indicate that the proposed APSK has a little worse performance than RQAM but the dynamic range of APSK is about 4 dB, 8 dB better than RQAM at 16-ary, 64-ary modulation/demodulation respectively.

• Journal of Sensor Science and Technology
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• v.27 no.3
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• pp.204-208
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• 2018

Monolayer graphene grown via chemical vapor deposition (CVD) is recognized as a promising material for sensor applications owing to its extremely large surface-to-volume ratio and outstanding electrical properties, as well as the fact that it can be easily transferred onto arbitrary substrates on a large-scale. However, the Dirac voltage of CVD-graphene devices fabricated with transferred graphene layers typically exhibit positive shifts arising from transfer and photolithography residues on the graphene surface. Furthermore, the Dirac voltage is dependent on the channel lengths because of the effect of metal-graphene contacts. Thus, large and nonuniform Dirac voltage of the transferred graphene is a critical issue in the fabrication of graphene-based sensor devices. In this work, we propose a fabrication process for graphene field-effect transistors with Dirac voltages close to zero. A vacuum annealing process at $300^{\circ}C$ was performed to eliminate the positive shift and channel-length-dependence of the Dirac voltage. In addition, the annealing process improved the carrier mobility of electrons and holes significantly by removing the residues on the graphene layer and reducing the effect of metal-graphene contacts. Uniform and close to zero Dirac voltage is crucial for the uniformity and low-power/voltage operation for sensor applications. Thus, the current study is expected to contribute significantly to the development of graphene-based practical sensor devices.

• 한국전산유체공학회:학술대회논문집
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• 2010.05a
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• pp.530-533
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• 2010

This paper presents numerical analysis and design optimization of various turbine blade cooling techniques with three-dimensional Reynolds-averaged Navier-Stokes(RANS) analysis. The fluid flow and heat transfer have been performed using ANSYS-CFX 11.0. A fan-shaped hole for film-cooling has been carried out to improve film-cooling effectiveness with the radial basis neural network method. The injection angle of hole, lateral expansion angle of hole and ratio of length-to-diameter of the hole are chosen as design variables and spatially averaged film-cooling effectiveness is considered as an objective function which is to be maximized. The impingement jet cooling has been performed to investigate heat transfer characteristic with geometry variables. Distance between jet nozzle exit and impingement plate, inclination of nozzle and aspect ratio of nozzle hole are considered as geometry variables. The area averaged Nusselt number is evaluated each geometry variables. A rotating rectangular channel with staggered array pin-fins has been investigated to increase heat transfer performance ad to decrease friction loss using KRG modeling. Two non-dimensional variables, the ratio of the eight diameter of the pin-fins and ratio of the spacing between the pin-fins to diameter of the pin-fins selected as design variables. A rotating rectangular channel with staggered dimples on opposite walls are formulated numerically to enhance heat transfer performance. The ratio of the dimple depth and dimple diameter are selected as geometry variables.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.2
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• pp.254-259
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• 1987

This paper describes the CMOS standard cell library implemented in double metal single poly gate process with 3\ulcornerm design rule, and its results of testing. This standard cell library contains total 33 cells of random logic gates, flip-flop gates and input/output buffers. All of cell was made to have the equal height of 98\ulcornerm, and width in multiple constant grid of 9 \ulcornerm. For cell data base, the electric characteristics of each cell is investigated and delay is characterized in terms of fanout. As the testing results of Ring Oscillator among the cell library, the average delay time for Inverter is 1.05 (ns), and the delay time due to channel routing metal is 0.65(ps)per unit length.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.210-224
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• 2006

A new analytical model for the static I-V characteristics of GaAs MESFET’s under optically controlled conditions in both linear and saturation region is presented in this paper. The novelty of the model lies in characterizing both photovoltaic (external, internal) and photoconductive effects. Deep level traps in the semi insulating GaAs substrate are also included in this model. Finally, effect of backgate voltage on I-V characteristics is explained analytically for the first time in literature. Small signal parameters of GaAs MESFET are derived under both dark and illuminated conditions. Some of the results are compared with reported experimental results to show the validity of the proposed model. Since accurate dc modeling is the key to accurate ac modeling, this model is very useful in the designing of photonic MMIC’s and OEIC’s using GaAs MESFET.