• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.55-55
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.160-160
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• 2010

In this work, we investigate ohmic contacts to p-type GaN using a Pt/Cu/Au metallization scheme in order to achieve low resistance and thermally stable ohmic contact on p-GaN. An ohmic contact formed by a metal electrode deposited on a highly doped InGaN/GaN superlattice sturucture on p-GaN layer. The specific contact resistance is $1.56{\times}10^{-6}{\Omega}cm^2$ for the as-deposited sample, $1.35{\times}10^{-4}{\Omega}cm^2$ for the sample annealed at $250^{\circ}C$ and $6.88{\times}10^{-3}{\Omega}cm^2$ for the sample annealed at $300^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.54-54
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• 2005

• Journal of Sensor Science and Technology
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• v.25 no.5
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• pp.320-325
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• 2016

In this paper, we propose an AlGaN/GaN-based extended-gate metal-insulator-semiconductor high electron mobility transistor (MISHEMT)-type biosensor for detecting streptavidin-biotin complexes. We measure the drain current of the fabricated sensor, which varies depending on the antibody-antigen reaction of streptavidin with biotin molecules. To confirm the immobilization of biotin polyethylene glycol (PEG) thiol, we analyze the Au surface of a GaN sample using X-ray photoelectron spectroscopy (XPS). The proposed biosensor shows higher sensitivity than Si-based extended-gate metal oxide semiconductor field effect transistor (MOSFET)-type biosensor. In addition, the proposed AlGaN/GaN-based extended-gate MISHEMT-type biosensor exhibits better long-term stability, compared to the conventional AlGaN/GaN-based MISHEMT-type biosensor.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.1
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• pp.6-10
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• 2007

The a-plane GaN layer on r-plane $Al_2O_3$ substrate is grown by mixed-source hydride vapor phase epitaxy (HVPE). The GaN/InGaN heterostructure is performed by selective area growth (SAG) method. The heterostructure consists of a flown over mixed-sourec are used as gallium (or indium) and nitrogen sources. The gas flow rates of HCl and $NH_3$ are maintained at 10 sccm and 500 sccm, respectively. The temperatures of GaN source zone is $650^{\circ}C$. In case of InGaN, the temperature of source zone is $900^{\circ}C$. The grown temperatures of GaN and InGaN layer are $820^{\circ}C\;and\;850^{\circ}C$, respectively. The EL (electroluminescence) peak of GaN/InGaN heterostructure is at nearly 460 nm and the FWHM (full width at half maximum) is 0.67 eV. These results are demonstrated that the heterostructure of III-nitrides on r-plane sapphire can be successfully grown by mixed-source HVPE with multi-sliding boat system.

• Proceedings of the Korean Society of Crop Science Conference
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• 2004.04a
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• pp.274-275
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• 2004

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.56.1-56.1
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• 2007

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.96-101
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• 2003

Direct evidence on the incorporation of high concentration of oxygen into undoped AlGaN layers for the AlGaN/GaN heterostuctures is provided by scanning photoemission microscopy using synchrotron radiation. In-situ annealing at $1000^{\circ}C$ resulted in a significant increase in the oxygen concentration at the AlGaN surface due to the predominant formation of Al-O bonds. The oxygen incorporation into the AlGaN layers resulting from the high reactivity of Al to oxygen can enhance the tunneling-assisted transport of electrons at the metal/AlGaN interface, leading to the reduction of the Schottky barrier height and the increase of the sheet carrier concentration near the AlGaN/GaN interface.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.48 no.2
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• pp.68-72
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• 2003

The metabolism of [$^{14}\textrm{C}$] $\textrm{GA}_{12}$ in the Chinese yam (Dioscorea opposita Thunb. var. Tsukune) was examined to determine the identification of endogenous gibberellins. [$^{14}\textrm{C}$] $\textrm{GA}_{12}$ was metabolized to $\textrm{GA}_{53}$, $\textrm{GA}_{44}$, $\textrm{GA}_{19}$, $\textrm{GA}_{20}$, $\textrm{GA}_1$, $\textrm{GA}_8$, $\textrm{GA}_{15}$, $\textrm{GA}_{24}$, $\textrm{GA}_9$, $\textrm{GA}_{36}$ and $\textrm{GA}_4$. Radioactivity of GAs in non C-13 hydroxylation route was five-fold higher than that of early C-13 hydroxylation in analyzed GA-metabolites. Radioactivity of $\textrm{GA}_4$ was always four times higher than that of $\textrm{GA}_1$ at every feeding time. $\textrm{GA}_1$ radioactivity has always a lower level to below 200 DPM. The major pathway of endogenous GA metabolism in seedlings of the Chinese yam might be the non C-13 hydroxylation pathway.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.1
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• pp.1-5
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• 2007

The structural and morphological properties of planar, nonpolar (11-20) a-plane GaN layers grown by hydride vapor phase epitaxy on (1-102) r-plan sapphire substrates are characterized. We report on the effect of low temperature ($500/550/600/660^{\circ}C$) AIN buffer layers on the structural properties of HVPE grown a-GaN kayers. and for the comparison, low temperature GaN and InGaN buffer layers are also tried for the growth of a-plane GaN layers. The structural geometry of a-GaN layers is severely affected on the growth condition of low temperature buffer layers. The most planar a-GaN could be obtained with $GaCl_3$ pretreatment at the growth temperature of $820^{\circ}C$.